公开(公告)号：US08222960B2

公开(公告)日：2012-07-17

申请号：US13006989

申请日：2011-01-14

申请人： Youn Suk Kim ,  Dae Seok Jang ,  Hyo Kun Bae ,  Seong Geun Kim ,  Young Jean Song ,  Ju Young Park

发明人： Youn Suk Kim ,  Dae Seok Jang ,  Hyo Kun Bae ,  Seong Geun Kim ,  Young Jean Song ,  Ju Young Park

IPC分类号： H02H7/20

CPC分类号： H03F3/245 ,  H03F1/52 ,  H03F1/523 ,  H03F3/195 ,  H03F2200/426 ,  H03F2200/444

摘要： An RF power amplifier includes an RF choke coil, a power amplification circuit unit, and an electrostatic discharge (ESD) protection unit. The RF choke coil is connected to a voltage terminal through which an operating voltage is applied. The RF choke coil supplies the operating voltage and interrupts an RF signal. The power amplification circuit unit is supplied with the operating voltage through the RF choke coil. The power amplification circuit unit amplifies an input signal inputted through an input terminal and outputs the amplified input signal through an output terminal. The ESD protection unit is connected between a first connection node and a ground. The ESD protection unit bypasses an ESD voltage from the first connection node to the ground, the first connection node being a node between the voltage terminal and the RF choke coil.

摘要翻译： RF功率放大器包括RF扼流线圈，功率放大电路单元和静电放电（ESD）保护单元。 RF扼流线圈连接到施加工作电压的电压端子。 RF扼流线圈提供工作电压并中断RF信号。 功率放大电路单元通过RF扼流线圈提供工作电压。 功率放大电路单元放大通过输入端子输入的输入信号，并通过输出端子输出放大的输入信号。 ESD保护单元连接在第一连接节点和地之间。 ESD保护单元将ESD电压从第一连接节点旁路到地，第一连接节点是电压端子和RF扼流线圈之间的节点。

公开(公告)号：US20130072187A1

公开(公告)日：2013-03-21

申请号：US13331887

申请日：2011-12-20

申请人： Chul Hwan YOON ,  Seong Geun Kim ,  Youn Suk Kim ,  Sung Jae Yoon ,  Jae Hyouck Choi ,  Dae Seok Jang ,  Sang Wook Park

发明人： Chul Hwan YOON ,  Seong Geun Kim ,  Youn Suk Kim ,  Sung Jae Yoon ,  Jae Hyouck Choi ,  Dae Seok Jang ,  Sang Wook Park

IPC分类号： H04W88/06 ,  H04W4/00

CPC分类号： H04B1/401 ,  H04B1/0067 ,  H04W88/06

摘要： There are provided a dual mode communications device and a method of improving a data rate thereof. The dual mode communications device according to the embodiment of the present invention may include a selection unit 100 connecting antenna terminals to receive terminals or transmit terminals, a receive path circuit unit allowing RF receive signals from each of the first and second antennas to pass therethrough, a transmit path circuit unit providing RF transmit signals to the transmit terminals of the selection unit, an RF circuit unit converting the RF receive signals from the receive path circuit unit into baseband signals and converting the baseband signals to be transmitted into the RF transmit signals, and a baseband circuit unit performing control and signal processing of the selection unit in a single communications mode among a dual mode and a single mode.

摘要翻译： 提供了双模式通信设备和提高其数据速率的方法。 根据本发明实施例的双模式通信设备可以包括将天线终端连接到接收终端或发射终端的选择单元100，允许来自第一和第二天线中的每一个的RF接收信号的接收路径电路单元通过， 发送路径电路单元，向所述选择单元的发送端提供RF发送信号; RF电路单元，将来自所述接收路径电路单元的RF接收信号变换为基带信号，并将要发送的基带信号变换为所述RF发送信号; 以及基带电路单元，在双模和单模中以单通信模式进行所述选择单元的控制和信号处理。

公开(公告)号：US08718705B2

公开(公告)日：2014-05-06

申请号：US13331887

申请日：2011-12-20

申请人： Chul Hwan Yoon ,  Seong Geun Kim ,  Youn Suk Kim ,  Sung Jae Yoon ,  Jae Hyouck Choi ,  Dae Seok Jang ,  Sang Wook Park

发明人： Chul Hwan Yoon ,  Seong Geun Kim ,  Youn Suk Kim ,  Sung Jae Yoon ,  Jae Hyouck Choi ,  Dae Seok Jang ,  Sang Wook Park

IPC分类号： H04M1/00

CPC分类号： H04B1/401 ,  H04B1/0067 ,  H04W88/06

摘要： There are provided a dual mode communications device and a method of improving a data rate thereof. The dual mode communications device according to the embodiment of the present invention may include a selection unit 100 connecting antenna terminals to receive terminals or transmit terminals, a receive path circuit unit allowing RF receive signals from each of the first and second antennas to pass therethrough, a transmit path circuit unit providing RF transmit signals to the transmit terminals of the selection unit, an RF circuit unit converting the RF receive signals from the receive path circuit unit into baseband signals and converting the baseband signals to be transmitted into the RF transmit signals, and a baseband circuit unit performing control and signal processing of the selection unit in a single communications mode among a dual mode and a single mode.

摘要翻译： 提供了双模式通信设备和提高其数据速率的方法。 根据本发明实施例的双模式通信设备可以包括将天线终端连接到接收终端或发射终端的选择单元100，允许来自第一和第二天线中的每一个的RF接收信号的接收路径电路单元通过， 发送路径电路单元，向所述选择单元的发送端提供RF发送信号; RF电路单元，将来自所述接收路径电路单元的RF接收信号变换为基带信号，并将要发送的基带信号变换为所述RF发送信号; 以及基带电路单元，在双模和单模中以单通信模式进行所述选择单元的控制和信号处理。

公开(公告)号：US08183919B2

公开(公告)日：2012-05-22

申请号：US12823489

申请日：2010-06-25

申请人： Young Jean Song ,  Shinichi Iizuka ,  Youn Suk Kim ,  Hyo Kun Bae ,  Sang Hee Kim ,  Jun Goo Won ,  Joong Jin Nam ,  Ki Joong Kim ,  Jae Hyouck Choi

发明人： Young Jean Song ,  Shinichi Iizuka ,  Youn Suk Kim ,  Hyo Kun Bae ,  Sang Hee Kim ,  Jun Goo Won ,  Joong Jin Nam ,  Ki Joong Kim ,  Jae Hyouck Choi

IPC分类号： H03F3/45

CPC分类号： H03F3/245 ,  H03F1/0205 ,  H03F3/193 ,  H03F3/3022 ,  H03F3/3044 ,  H03F3/45179 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/451 ,  H03F2203/45481 ,  H03F2203/45621

摘要： A power amplifier includes an inverter amplification section configured to amplify AC components and remove DC components from at least one input signal, an impedance matching section configured to match an impedance of a transmission path of the at least one input signal amplified by the inverter amplification section, and an amplification section configured to amplify an impedance-matched signal from the impedance matching section according to a predetermined gain. The inverter amplification section includes at least one P-channel metal-oxide semiconductor field effect transistor (MOS FET) having a gate configured to receive the at least one input signal and at least one N-channel MOS FET having a gate configured to receive the at least one input signal. The at least one P-channel MOS FET and the at least one N-channel MOS FET are serially connected.

摘要翻译： 功率放大器包括反相器放大部分，被配置为放大AC分量并从至少一个输入信号中去除DC分量;阻抗匹配部分，被配置为匹配由反相器放大部分放大的至少一个输入信号的传输路径的阻抗 以及放大部，被配置为根据预定增益放大来自阻抗匹配部的阻抗匹配信号。 反相器放大部分包括至少一个具有被配置为接收至少一个输入信号的栅极的P沟道金属氧化物半导体场效应晶体管（MOS FET），以及至少一个具有栅极的N沟道MOS FET，其被配置为接收 至少一个输入信号。 至少一个P沟道MOS FET和至少一个N沟道MOS FET串联。

公开(公告)号：US20120044604A1

公开(公告)日：2012-02-23

申请号：US13177001

申请日：2011-07-06

申请人： Ki Joong KIM ,  Youn Suk Kim ,  Dae Seok Jang ,  Young Jean Song ,  Jun Goo Won

发明人： Ki Joong KIM ,  Youn Suk Kim ,  Dae Seok Jang ,  Young Jean Song ,  Jun Goo Won

IPC分类号： H02H9/04

CPC分类号： H03F1/52 ,  H01L2224/48137 ,  H01L2224/49111

摘要： Disclosed is a power amplifier module with a shared ESD protection circuit. There is provided a power amplifier module including: an ESD protection circuit that is connected to an output terminal of the LDO part, an output conductive wire pad that outputs the operating power of the LDO part; a printed conductive wire pad that is electrically connected to the output conductive wire pad of the PA controller; a first power coupler that includes a first primary side conductive wire electrically connected to the printer conductive wire pad; a second power coupler that includes a second primary side conductive wire electrically connected to the printer conductive wire pad; a first PA part; and a second PA part, wherein each of the first PA part and the second PA part is protected from ESD by the ESD protection circuit.

摘要翻译： 公开了具有共享ESD保护电路的功率放大器模块。 提供了一种功率放大器模块，包括：连接到LDO部分的输出端子的ESD保护电路，输出LDO部分的工作电力的输出导线焊盘; 印刷的导线焊盘，其电连接到所述PA控制器的所述输出导线焊盘; 第一功率耦合器，包括电连接到打印机导电焊盘的第一初级侧导线; 第二功率耦合器，包括电连接到打印机导电焊盘的第二初级侧导线; 第一个PA部分; 和第二PA部分，其中第一PA部分和第二PA部分中的每一个被ESD保护电路保护免受ESD。

公开(公告)号：US08416545B2

公开(公告)日：2013-04-09

申请号：US13177001

申请日：2011-07-06

申请人： Ki Joong Kim ,  Youn Suk Kim ,  Dae Seok Jang ,  Young Jean Song ,  Jun Goo Won

发明人： Ki Joong Kim ,  Youn Suk Kim ,  Dae Seok Jang ,  Young Jean Song ,  Jun Goo Won

IPC分类号： H02H9/00

CPC分类号： H03F1/52 ,  H01L2224/48137 ,  H01L2224/49111

摘要： Disclosed is a power amplifier module with a shared ESD protection circuit. There is provided a power amplifier module including: an ESD protection circuit that is connected to an output terminal of the LDO part, an output conductive wire pad that outputs the operating power of the LDO part; a printed conductive wire pad that is electrically connected to the output conductive wire pad of the PA controller; a first power coupler that includes a first primary side conductive wire electrically connected to the printer conductive wire pad; a second power coupler that includes a second primary side conductive wire electrically connected to the printer conductive wire pad; a first PA part; and a second PA part, wherein each of the first PA part and the second PA part is protected from ESD by the ESD protection circuit.

摘要翻译： 公开了具有共享ESD保护电路的功率放大器模块。 提供了一种功率放大器模块，包括：连接到LDO部分的输出端子的ESD保护电路，输出LDO部分的工作电力的输出导线焊盘; 印刷的导线焊盘，其电连接到所述PA控制器的所述输出导线焊盘; 第一功率耦合器，包括电连接到打印机导电焊盘的第一初级侧导线; 第二功率耦合器，包括电连接到打印机导电焊盘的第二初级侧导线; 第一个PA部分; 和第二PA部分，其中第一PA部分和第二PA部分中的每一个被ESD保护电路保护免受ESD。

公开(公告)号：US08917145B2

公开(公告)日：2014-12-23

申请号：US13452605

申请日：2012-04-20

申请人： Young Jean Song ,  Jun Goo Won ,  Youn Suk Kim ,  Shinichi Iizuka ,  Ju Young Park ,  Ki Joong Kim

发明人： Young Jean Song ,  Jun Goo Won ,  Youn Suk Kim ,  Shinichi Iizuka ,  Ju Young Park ,  Ki Joong Kim

IPC分类号： H03F3/191

CPC分类号： H03F1/08 ,  H03F1/32 ,  H03F3/19 ,  H03F3/211 ,  H03F2200/18 ,  H03F2200/225

摘要： There is provided an amplifier circuit. The amplifier circuit includes an amplifying unit including at least one transistor; at least one first bias circuit unit including a resistor and connected to the at least one transistor; and at least one second bias circuit unit connected between an input terminal to which an input signal is applied and the at least one transistor so as to block an input signal having a frequency higher than a first frequency or having a frequency lower than a second frequency. The amplifier circuit according to embodiment of the present invention may prevent thermal runaway, remove a harmonic component from an input signal to be amplified and suppress oscillations.

摘要翻译： 提供了放大器电路。 该放大器电路包括一个包括至少一个晶体管的放大单元; 至少一个第一偏置电路单元，包括电阻并连接到所述至少一个晶体管; 以及至少一个第二偏置电路单元，连接在施加输入信号的输入端和所述至少一个晶体管之间，以便阻挡具有高于第一频率或具有低于第二频率的频率的频率的输入信号 。 根据本发明的实施例的放大器电路可以防止热失控，从要放大的输入信号中去除谐波分量并抑制振荡。

公开(公告)号：US20130207728A1

公开(公告)日：2013-08-15

申请号：US13452605

申请日：2012-04-20

申请人： Young Jean SONG ,  Jun Goo Won ,  Youn Suk Kim ,  Shinichi Iizuka ,  Ju Young Park ,  Ki Joong Kim

发明人： Young Jean SONG ,  Jun Goo Won ,  Youn Suk Kim ,  Shinichi Iizuka ,  Ju Young Park ,  Ki Joong Kim

IPC分类号： H03F3/04

CPC分类号： H03F1/08 ,  H03F1/32 ,  H03F3/19 ,  H03F3/211 ,  H03F2200/18 ,  H03F2200/225

摘要： There is provided an amplifier circuit. The amplifier circuit includes an amplifying unit including at least one transistor; at least one first bias circuit unit including a resistor and connected to the at least one transistor; and at least one second bias circuit unit connected between an input terminal to which an input signal is applied and the at least one transistor so as to block an input signal having a frequency higher than a first frequency or having a frequency lower than a second frequency. The amplifier circuit according to embodiment of the present invention may prevent thermal runaway, remove a harmonic component from an input signal to be amplified and suppress oscillations.

摘要翻译： 提供了放大器电路。 该放大器电路包括一个包括至少一个晶体管的放大单元; 至少一个第一偏置电路单元，包括电阻并连接到所述至少一个晶体管; 以及至少一个第二偏置电路单元，其连接在施加输入信号的输入端与所述至少一个晶体管之间，以便阻挡具有高于第一频率的频率或具有低于第二频率的频率的输入信号 。 根据本发明的实施例的放大器电路可以防止热失控，从要放大的输入信号中去除谐波分量并抑制振荡。

公开(公告)号：US20130321086A1

公开(公告)日：2013-12-05

申请号：US13565417

申请日：2012-08-02

申请人： Shinichi IIZUKA ,  Youn Suk Kim ,  Jun Goo Won ,  Myeong Woo Han ,  Young Jean Song ,  Ju Young Park ,  Ki Joong Kim

发明人： Shinichi IIZUKA ,  Youn Suk Kim ,  Jun Goo Won ,  Myeong Woo Han ,  Young Jean Song ,  Ju Young Park ,  Ki Joong Kim

IPC分类号： H03F3/04 ,  G05F3/02

CPC分类号： H03F3/19 ,  H03F1/30

摘要： There are provided a bias circuit supplying different levels of bias power according to respective power modes through a simple circuit configuration, and a power amplifier having the same. The bias circuit includes: a bias setting unit setting a bias power voltage level by switching reference power having a pre-set voltage level determined according to a pre-set power mode; and a bias supply unit including a switching element performing switching according to the setting of the bias setting unit and supplying bias power having a voltage level determined according to a switching operation of the switching element.

摘要翻译： 提供了通过简单电路配置根据各自的功率模式提供不同电平的偏置功率的偏置电路，以及具有该偏置电路的功率放大器。 偏置电路包括：偏置设定单元，通过切换具有根据预设功率模式确定的预设电压电平的参考功率来设置偏置功率电压电平; 以及偏置电源单元，包括开关元件，根据偏置设置单元的设置执行切换，并提供具有根据开关元件的开关操作确定的电压电平的偏置功率。

公开(公告)号：US08854142B2

公开(公告)日：2014-10-07

申请号：US13565417

申请日：2012-08-02

申请人： Shinichi Iizuka ,  Youn Suk Kim ,  Jun Goo Won ,  Myeong Woo Han ,  Young Jean Song ,  Ju Young Park ,  Ki Joong Kim

发明人： Shinichi Iizuka ,  Youn Suk Kim ,  Jun Goo Won ,  Myeong Woo Han ,  Young Jean Song ,  Ju Young Park ,  Ki Joong Kim

IPC分类号： H03F3/04

CPC分类号： H03F3/19 ,  H03F1/30

摘要： There are provided a bias circuit supplying different levels of bias power according to respective power modes through a simple circuit configuration, and a power amplifier having the same. The bias circuit includes: a bias setting unit setting a bias power voltage level by switching reference power having a pre-set voltage level determined according to a pre-set power mode; and a bias supply unit including a switching element performing switching according to the setting of the bias setting unit and supplying bias power having a voltage level determined according to a switching operation of the switching element.

摘要翻译： 提供了通过简单电路配置根据各自的功率模式提供不同电平的偏置功率的偏置电路，以及具有该偏置电路的功率放大器。 偏置电路包括：偏置设定单元，通过切换具有根据预设功率模式确定的预设电压电平的参考功率来设置偏置功率电压电平; 以及偏置电源单元，包括开关元件，根据偏置设置单元的设置执行切换，并提供具有根据开关元件的开关操作确定的电压电平的偏置功率。