公开(公告)号：US06548011B1

公开(公告)日：2003-04-15

申请号：US09687879

申请日：2000-10-12

申请人： Young Woo Rhee ,  Ho Yong Lee ,  Suk Joong Kang

发明人： Young Woo Rhee ,  Ho Yong Lee ,  Suk Joong Kang

IPC分类号： C04B3332

CPC分类号： C04B35/117 ,  C04B35/111 ,  C04B35/6268 ,  C04B35/64 ,  C04B2235/3217 ,  C04B2235/3241 ,  C04B2235/3272 ,  C04B2235/604 ,  C04B2235/6582 ,  C04B2235/6584 ,  C04B2235/663 ,  C04B2235/80 ,  C04B2235/85 ,  C04B2235/96

摘要： A method of manufacturing an alumina-based ceramic includes sintering a powder compact of an iron-containing alumina powder in an atmosphere (N2, 95 N2-5 H2, H2) of a relatively low oxygen partial pressure, and annealing in an atmosphere (80 N2-20 O2, O2) higher in oxygen partial pressure than the sintering atmosphere to provide an alumina-based ceramic with a grain-boundary migration layer on a surface thereof. The resulting undulated grain boundaries on the surface layer suppress and deflect the crack propagation, thereby improving the short-crack toughness. The formation of a grain-boundary migration layer on the surface of an alumina-based ceramic brings about a great improvement in short-crack related properties, including durability and wear resistance.

摘要翻译： 制造氧化铝基陶瓷的方法包括在相对较低的氧分压的气氛（N 2，95 N 2，H 2，H 2）中烧结含氧氧化铝粉末的粉末压块，并在大气中退火（80 N2-20 O2，O2）的氧分压比烧结气氛高，以提供在其表面上具有晶界迁移层的氧化铝基陶瓷。 表面层上产生的波状晶界抑制和偏转裂纹扩展，从而提高短裂纹韧性。 在氧化铝系陶瓷的表面上形成晶界迁移层，具有短裂纹相关性能的显着改善，包括耐久性和耐磨性。

公开(公告)号：US06447605B1

公开(公告)日：2002-09-10

申请号：US09441968

申请日：1999-11-17

申请人： Sung Yoon Chung ,  Suk Pil Kim ,  Byung Sung Kang ,  Si Kyung Choi ,  Suk Joong Kang

发明人： Sung Yoon Chung ,  Suk Pil Kim ,  Byung Sung Kang ,  Si Kyung Choi ,  Suk Joong Kang

IPC分类号： C30B2504

CPC分类号： C30B25/18 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02546

摘要： Disclosed is a method for preparing heteroepitaxial thin films which are free of island structures which have a bad influence on the photoelectric properties and interfacial reactivity of the thin films. These heteroepitaxial thin films are deposited on grooved or curved surfaces of substrates. The use of grooved substrates relieves the coherent elastic strain from the thin films, thereby inhibiting the surface roughening and the island structure formation in the heteroepitaxial thin films. The method can be applied to all of the thin films that show island structures, including GaAs/Si and SiGe/Si typically used in semiconductor devices and various electronic parts, enabling the thin films to be flatly deposited at a significant thickness on various substrates without additionally processing.

摘要翻译： 公开了一种制备异质外延薄膜的方法，该薄膜不含岛结构，对薄膜的光电特性和界面反应性有不良影响。 这些异质外延薄膜沉积在基板的凹槽或弯曲表面上。 使用带槽的衬底减轻了薄膜的相干弹性应变，从而抑制异质外延薄膜中的表面粗糙化和岛状结构的形成。 该方法可以应用于显示岛结构的所有薄膜，包括通常用于半导体器件中的GaAs / Si和SiGe / Si以及各种电子部件，使薄膜能够在各种基板上以显着的厚度平坦地沉积，而无需 额外处理。