摘要:
A low power semiconductor memory device using a power gating is disclosed. The semiconductor memory device includes a standard cell and a power gating cell. The standard cell is provided with a virtual supply voltage and a first supply voltage. The power gating cell generates the virtual supply voltage from a second supply voltage and provides the standard cell with the virtual supply voltage in response to a control signal. The virtual supply voltage and the first supply voltage are provided by a first metal layer and the second supply voltage is provided by a third metal layer. The power gating cell may include at least one slice block and isolator blocks. The respective slice block has a transistor for switching current. The isolator blocks are arranged on both sides of the slice block and insulate the slice block from outside.
摘要:
A power gating circuit includes a logic circuit, a switching element and a retention flip-flop. The logic circuit is coupled between a first power rail and a virtual power rail. The switching element selectively couples the virtual power rail to a second power rail in response to a mode control signal indicating an active mode or a standby mode. The retention flip-flop selectively performs a flip-flop operation or a data retention operation in response to a voltage of the virtual power rail.
摘要:
A power gating circuit includes a logic circuit, a switching element and a retention flip-flop. The logic circuit is coupled between a first power rail and a virtual power rail. The switching element selectively couples the virtual power rail to a second power rail in response to a mode control signal indicating an active mode or a standby mode. The retention flip-flop selectively performs a flip-flop operation or a data retention operation in response to a voltage of the virtual power rail.
摘要:
A low power semiconductor memory device using a power gating is disclosed. The semiconductor memory device includes a standard cell and a power gating cell. The standard cell is provided with a virtual supply voltage and a first supply voltage. The power gating cell generates the virtual supply voltage from a second supply voltage and provides the standard cell with the virtual supply voltage in response to a control signal. The virtual supply voltage and the first supply voltage are provided by a first metal layer and the second supply voltage is provided by a third metal layer. The power gating cell may include at least one slice block and isolator blocks. The respective slice block has a transistor for switching current. The isolator blocks are arranged on both sides of the slice block and insulate the slice block from outside.
摘要:
Voltage islands enable a core-level power optimization of ASIC/SoC designs by utilizing a unique supply voltage for each cluster of the design. Creating voltage islands in a chip design for optimizing the overall power consumption consists of generating voltage island partitions, assigning voltage levels and floorplanning. The generation of voltage island partitions and the voltage level assignment are performed simultaneously in a floorplanning context due to the physical constraints involved. This leads to a floorplanning formulation that differs from the conventional floorplanning for ASIC designs. Such a formulation of a physically aware voltage island partitioning and method for performing simultaneous voltage island partitioning, level assignment and floorplanning are described, as are the definition and the solution of floorplanning for voltage island based designs executed under area, power, timing and physical constraints. The physical planning of voltage islands includes: a) characterizing cell clusters in terms of voltages and power consumption values; b) providing a set of cell clusters that belong to a single voltage island Random Logic Macro (RLM); and c) assigning voltages for the voltage island RLMs, all within the context of generating a physically realizable floorplan for the design.
摘要:
A body biasing control circuit capable of being shared by a plurality of macro blocks and can independently control body voltages of a plurality of macro blocks. The body biasing control circuit includes a lookup table for storing a plurality of indexes where each index is associated with a body voltage appropriate for an operating state of a corresponding macro block. A control unit receives a corresponding index from the lookup table and generates a plurality of body voltages appropriate for an operating state of a macro block corresponding to the index and supplies the body voltages to the macro block.
摘要:
Voltage islands enable a core-level power optimization of ASIC/SoC designs by utilizing a unique supply voltage for each cluster of the design. Creating voltage islands in a chip design for optimizing the overall power consumption consists of generating voltage island partitions, assigning voltage levels and floorplanning. The generation of voltage island partitions and the voltage level assignment are performed simultaneously in a floorplanning context due to the physical constraints involved. This leads to a floorplanning formulation that differs from the conventional floorplanning for ASIC designs. Such a formulation of a physically aware voltage island partitioning and method for performing simultaneous voltage island partitioning, level assignment and floorplanning are described, as are the definition and the solution of floorplanning for voltage island based designs executed under area, power, timing and physical constraints. The physical planning of voltage islands includes: a) characterizing cell clusters in terms of voltages and power consumption values; b) providing a set of cell clusters that belong to a single voltage island Random Logic Macro (RLM); and c) assigning voltages for the voltage island RLMs, all within the context of generating a physically realizable floorplan for the design.