公开(公告)号：US20140293106A1

公开(公告)日：2014-10-02

申请号：US14303221

申请日：2014-06-12

申请人： Yu Jin PARK ,  Han YANG ,  Sin-Hwan LIM ,  Kyo Jin CHOO ,  Seog Heon HAM

发明人： Yu Jin PARK ,  Han YANG ,  Sin-Hwan LIM ,  Kyo Jin CHOO ,  Seog Heon HAM

IPC分类号： H04N5/365 ,  H04N5/363 ,  H04N5/359 ,  H04N5/335 ,  H04N5/374

CPC分类号： H04N5/3658 ,  H03K5/08 ,  H03M1/08 ,  H03M1/12 ,  H03M1/123 ,  H03M1/56 ,  H04N5/3355 ,  H04N5/3591 ,  H04N5/363 ,  H04N5/3742

摘要： One embodiment of an analog-to-digital converter includes at least one comparator and a restriction circuit. The comparator has first and second input nodes and a connection node. The connection node is one of an internal node and an output node of the comparator. The restriction circuit is electrically connected to the connection node, and the restriction circuit is configured to restrict a voltage of the connection node.

摘要翻译： 模数转换器的一个实施例包括至少一个比较器和限制电路。 比较器具有第一和第二输入节点和连接节点。 连接节点是比较器的内部节点和输出节点之一。 限制电路电连接到连接节点，并且限制电路被配置为限制连接节点的电压。

公开(公告)号：US20140070974A1

公开(公告)日：2014-03-13

申请号：US13669983

申请日：2012-11-06

申请人： Yu Jin PARK ,  Han YANG ,  Sin-Hwan LIM ,  Kyo Jin CHOO ,  Seog Heon HAM

发明人： Yu Jin PARK ,  Han YANG ,  Sin-Hwan LIM ,  Kyo Jin CHOO ,  Seog Heon HAM

IPC分类号： H03M1/12

CPC分类号： H04N5/3658 ,  H03K5/08 ,  H03M1/08 ,  H03M1/12 ,  H03M1/123 ,  H03M1/56 ,  H04N5/3355 ,  H04N5/3591 ,  H04N5/363 ,  H04N5/3742

摘要： One embodiment of an analog-to-digital converter includes at least one comparator and a restriction circuit. The comparator has first and second input nodes and a connection node. The connection node is one of an internal node and an output node of the comparator. The restriction circuit is electrically connected to the connection node, and the restriction circuit is configured to restrict a voltage of the connection node.

公开(公告)号：US20150054995A1

公开(公告)日：2015-02-26

申请号：US14466395

申请日：2014-08-22

申请人： Kyo Jin CHOO ,  Hirosige GOTO ,  Kyu Sik KIM ,  Yun Kyung KIM ,  Kyung Bae PARK ,  Jin Ho SEO ,  Sang Chul SUL ,  Kyung Ho LEE ,  Kwang-hee LEE

发明人： Kyo Jin CHOO ,  Hirosige GOTO ,  Kyu Sik KIM ,  Yun Kyung KIM ,  Kyung Bae PARK ,  Jin Ho SEO ,  Sang Chul SUL ,  Kyung Ho LEE ,  Kwang-hee LEE

IPC分类号： H01L27/30 ,  H04N5/378 ,  H04N5/369 ,  H01L51/42

CPC分类号： H01L27/307 ,  H01L51/424 ,  H04N5/3698 ,  H04N5/37452 ,  H04N5/378

摘要： Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers.

摘要翻译： 提供了一种有机像素，其包括具有像素电路的半导体衬底，具有第一接触的互连层和形成在半导体衬底上的第一电极以及形成在互连层上的有机光电二极管。 例如，有机光电二极管包括形成在第一电极上的绝缘层，形成在第一接触件，绝缘层和第二电极之间的第二电极和光电转换区域。 光电转换区域包括给电子有机材料和受电子有机材料。 有机光电二极管还可以包括电连接到第一触点的第二触点。 第二触点和绝缘层之间的水平距离可以小于或等于几微米，例如10微米。

公开(公告)号：US20130093932A1

公开(公告)日：2013-04-18

申请号：US13650839

申请日：2012-10-12

申请人： Kyo Jin CHOO ,  Hirosige GOTO ,  Kyu Sik KIM ,  Yun Kyung KIM ,  Kyung Bae PARK ,  Jin Ho SEO ,  Sang Chul SUL ,  Kyung Ho LEE ,  Kwang Hee LEE

发明人： Kyo Jin CHOO ,  Hirosige GOTO ,  Kyu Sik KIM ,  Yun Kyung KIM ,  Kyung Bae PARK ,  Jin Ho SEO ,  Sang Chul SUL ,  Kyung Ho LEE ,  Kwang Hee LEE

IPC分类号： H04N5/335 ,  H01L51/50 ,  H01L31/18

CPC分类号： H01L27/307 ,  H01L51/424 ,  H04N5/3698 ,  H04N5/37452 ,  H04N5/378

摘要： Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers.