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    Spin torque transfer MRAM device
    1.
    发明授权
    Spin torque transfer MRAM device 有权
    旋转扭矩传递MRAM装置

    公开(公告)号：US07573736B2

    公开(公告)日：2009-08-11

    申请号：US11752157

    申请日：2007-05-22

    申请人： Yu-Jen Wang ,  Denny Tang ,  Hsu-Chen Cheng

    发明人： Yu-Jen Wang ,  Denny Tang ,  Hsu-Chen Cheng

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675

    摘要： The present disclosure provides a magnetic memory element. The memory element includes a magnetic tunnel junction (MTJ) element and an electrode. The electrode includes a pinning layer, a pinned layer, and a non-magnetic conductive layer. In one embodiment, the MTJ element includes a first surface having a first surface area, and the electrode includes a second surface. In the embodiment, the second surface of the electrode is coupled to the first surface of the MTJ element such that an interface area is formed and the interface area is less than the first surface area.

    摘要翻译： 本公开提供了一种磁存储元件。 存储元件包括磁隧道结（MTJ）元件和电极。 电极包括钉扎层，钉扎层和非磁性导电层。 在一个实施例中，MTJ元件包括具有第一表面区域的第一表面，并且电极包括第二表面。 在该实施例中，电极的第二表面耦合到MTJ元件的第一表面，使得形成界面区域，并且界面面积小于第一表面积。

    Advanced MRAM design
    2.
    发明授权
    Advanced MRAM design 有权
    先进的MRAM设计

    公开(公告)号：US07719882B2

    公开(公告)日：2010-05-18

    申请号：US11743453

    申请日：2007-05-02

    申请人： Wen-Chin Lin ,  Hsu-Chen Cheng ,  Yu-Jen Wang ,  Denny Tang

    发明人： Wen-Chin Lin ,  Hsu-Chen Cheng ,  Yu-Jen Wang ,  Denny Tang

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16 ,  G11C11/005 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed herein is a technique for created an advanced MRAM array for constructing a memory integrated circuit chip. More specifically, the disclosed principles provide for an integrated circuit memory chip comprised of a combination of at least one of an array of high-speed magnetic memory cells, and at least one of an array of high-density magnetic memory cells. Accordingly, a memory chip constructed as disclosed herein provides the benefit of both high-speed and high-density memory cells on the same memory chip. As a result, applications benefiting from the use of (or perhaps even needing) high-speed memory cells are provided by the memory cells in the high-speed memory cell array.

    摘要翻译： 这里公开了一种用于创建用于构建存储器集成电路芯片的高级MRAM阵列的技术。 更具体地，所公开的原理提供了由高速磁存储器单元的阵列中的至少一个和高密度磁存储单元的阵列中的至少一个的组合构成的集成电路存储器芯片。 因此，如本文所公开的构造的存储器芯片提供了在相同存储器芯片上的高速和高密度存储器单元的益处。 结果，受益于使用（或甚至需要的）高速存储器单元的应用由高速存储单元阵列中的存储单元提供。

    DEVICE AND METHOD OF PROGRAMMING A MAGNETIC MEMORY ELEMENT
    3.
    发明申请
    DEVICE AND METHOD OF PROGRAMMING A MAGNETIC MEMORY ELEMENT 有权
    磁性记忆元件的编程方法及装置

    公开(公告)号：US20100118603A1

    公开(公告)日：2010-05-13

    申请号：US12687608

    申请日：2010-01-14

    申请人： Yu-Jen Wang ,  Hsu-Chen Cheng ,  Denny Tang

    发明人： Yu-Jen Wang ,  Hsu-Chen Cheng ,  Denny Tang

    IPC分类号： G11C11/14 ,  H01L29/82

    CPC分类号： G11C11/1693 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

    摘要： The present disclosure provides a non-volatile memory device. A memory device includes a first magnetic element having a fixed magnetization. The memory device also includes a second magnetic element having a non-fixed magnetization. The memory device further includes a barrier layer between the first and second magnetic elements. A unidirectional current source is electrically coupled to the first and second magnetic elements. The current source is configured to provide a first current to the first and second memory elements. The first current has a first current density and is in a first direction. The current source is also configured to provide a second current to the first and second magnetic elements. The second current has a second current density, different than the first current density, and is in the first direction. The first and second currents cause the non-fixed magnetization of the second magnetic element to toggle between substantially parallel to the fixed magnetization of the first magnetic element and between substantially antiparallel to the fixed magnetization of the first magnetic element.

    摘要翻译： 本公开提供了一种非易失性存储器件。 存储器件包括具有固定磁化强度的第一磁性元件。 存储器件还包括具有非固定磁化强度的第二磁性元件。 存储器件还包括在第一和第二磁性元件之间的阻挡层。 单向电流源电耦合到第一和第二磁性元件。 当前源被配置为向第一和第二存储器元件提供第一电流。 第一电流具有第一电流密度并且处于第一方向。 电流源还被配置为向第一和第二磁性元件提供第二电流。 第二电流具有与第一电流密度不同的第二电流密度，并且处于第一方向。 第一和第二电流导致第二磁性元件的非固定磁化在基本上平行于第一磁性元件的固定磁化之间以及基本上反平行于第一磁性元件的固定磁化之间翻转。

    Device and method of programming a magnetic memory element
    4.
    发明授权
    Device and method of programming a magnetic memory element 有权
    编程磁记忆元件的装置和方法

    公开(公告)号：US08213220B2

    公开(公告)日：2012-07-03

    申请号：US12687608

    申请日：2010-01-14

    申请人： Yu-Jen Wang ,  Hsu-Chen Cheng ,  Denny Tang

    发明人： Yu-Jen Wang ,  Hsu-Chen Cheng ,  Denny Tang

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1693 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

    摘要： The present disclosure provides a non-volatile memory device. A memory device includes a first magnetic element having a fixed magnetization. The memory device also includes a second magnetic element having a non-fixed magnetization. The memory device further includes a barrier layer between the first and second magnetic elements. A unidirectional current source is electrically coupled to the first and second magnetic elements. The current source is configured to provide a first current to the first and second memory elements. The first current has a first current density and is in a first direction. The current source is also configured to provide a second current to the first and second magnetic elements. The second current has a second current density, different than the first current density, and is in the first direction. The first and second currents cause the non-fixed magnetization of the second magnetic element to toggle between substantially parallel to the fixed magnetization of the first magnetic element and between substantially antiparallel to the fixed magnetization of the first magnetic element.

    摘要翻译： 本公开提供了一种非易失性存储器件。 存储器件包括具有固定磁化强度的第一磁性元件。 存储器件还包括具有非固定磁化强度的第二磁性元件。 存储器件还包括在第一和第二磁性元件之间的阻挡层。 单向电流源电耦合到第一和第二磁性元件。 当前源被配置为向第一和第二存储器元件提供第一电流。 第一电流具有第一电流密度并且处于第一方向。 电流源还被配置为向第一和第二磁性元件提供第二电流。 第二电流具有与第一电流密度不同的第二电流密度，并且处于第一方向。 第一和第二电流导致第二磁性元件的非固定磁化在基本上平行于第一磁性元件的固定磁化之间以及基本上反平行于第一磁性元件的固定磁化之间翻转。

    Spin torque transfer MRAM device
    5.
    发明授权
    Spin torque transfer MRAM device 有权
    旋转扭矩传递MRAM装置

    公开(公告)号：US08120947B2

    公开(公告)日：2012-02-21

    申请号：US12537093

    申请日：2009-08-06

    申请人： Yu-Jen Wang ,  Denny Tang ,  Hsu-Chen Cheng

    发明人： Yu-Jen Wang ,  Denny Tang ,  Hsu-Chen Cheng

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675

    摘要： The present disclosure provides a magnetic memory element. The memory element includes a magnetic tunnel junction (MTJ) element and an electrode. The electrode includes a pinning layer, a pinned layer, and a non-magnetic conductive layer. In one embodiment, the MTJ element includes a first surface having a first surface area, and the electrode includes a second surface. In the embodiment, the second surface of the electrode is coupled to the first surface of the MTJ element such that an interface area is formed and the interface area is less than the first surface area.

    摘要翻译： 本公开提供了一种磁存储元件。 存储元件包括磁隧道结（MTJ）元件和电极。 电极包括钉扎层，钉扎层和非磁性导电层。 在一个实施例中，MTJ元件包括具有第一表面区域的第一表面，并且电极包括第二表面。 在该实施例中，电极的第二表面耦合到MTJ元件的第一表面，使得形成界面区域，并且界面面积小于第一表面积。

    SPIN TORQUE TRANSFER MRAM DEVICE
    6.
    发明申请
    SPIN TORQUE TRANSFER MRAM DEVICE 有权
    旋转转矩MRAM装置

    公开(公告)号：US20090290410A1

    公开(公告)日：2009-11-26

    申请号：US12537093

    申请日：2009-08-06

    申请人： Yu-Jen Wang ,  Denny Tang ,  Hsu-Chen Cheng

    发明人： Yu-Jen Wang ,  Denny Tang ,  Hsu-Chen Cheng

    IPC分类号： G11C11/00 ,  G11C11/14

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675

    摘要： The present disclosure provides a magnetic memory element. The memory element includes a magnetic tunnel junction (MTJ) element and an electrode. The electrode includes a pinning layer, a pinned layer, and a non-magnetic conductive layer. In one embodiment, the MTJ element includes a first surface having a first surface area, and the electrode includes a second surface. In the embodiment, the second surface of the electrode is coupled to the first surface of the MTJ element such that an interface area is formed and the interface area is less than the first surface area.

    摘要翻译： 本公开提供了一种磁存储元件。 存储元件包括磁隧道结（MTJ）元件和电极。 电极包括钉扎层，钉扎层和非磁性导电层。 在一个实施例中，MTJ元件包括具有第一表面区域的第一表面，并且电极包括第二表面。 在该实施例中，电极的第二表面耦合到MTJ元件的第一表面，使得形成界面区域，并且界面面积小于第一表面积。

    SPIN TORQUE TRANSFER MRAM DEVICE
    7.
    发明申请
    SPIN TORQUE TRANSFER MRAM DEVICE 有权
    旋转转矩MRAM装置

    公开(公告)号：US20080291720A1

    公开(公告)日：2008-11-27

    申请号：US11752157

    申请日：2007-05-22

    申请人： Yu-Jen Wang ,  Denny Tang ,  Hsu-Chen Cheng

    发明人： Yu-Jen Wang ,  Denny Tang ,  Hsu-Chen Cheng

    IPC分类号： G11C11/15 ,  H01L21/00

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675

    摘要： The present disclosure provides a magnetic memory element. The memory element includes a magnetic tunnel junction (MTJ) element and an electrode. The electrode includes a pinning layer, a pinned layer, and a non-magnetic conductive layer. In one embodiment, the MTJ element includes a first surface having a first surface area, and the electrode includes a second surface. In the embodiment, the second surface of the electrode is coupled to the first surface of the MTJ element such that an interface area is formed and the interface area is less than the first surface area.

    摘要翻译： 本公开提供了一种磁存储元件。 存储元件包括磁隧道结（MTJ）元件和电极。 电极包括钉扎层，钉扎层和非磁性导电层。 在一个实施例中，MTJ元件包括具有第一表面区域的第一表面，并且电极包括第二表面。 在该实施例中，电极的第二表面耦合到MTJ元件的第一表面，使得形成界面区域，并且界面面积小于第一表面区域。

    Advanced MRAM design
    8.
    发明申请
    Advanced MRAM design 有权
    先进的MRAM设计

    公开(公告)号：US20080186757A1

    公开(公告)日：2008-08-07

    申请号：US11743453

    申请日：2007-05-02

    申请人： Wen-Chin Lin ,  Hsu-Chen Cheng ,  Yu-Jen Wang ,  Denny Tang

    发明人： Wen-Chin Lin ,  Hsu-Chen Cheng ,  Yu-Jen Wang ,  Denny Tang

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16 ,  G11C11/005 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed herein is a technique for created an advanced MRAM array for constructing a memory integrated circuit chip. More specifically, the disclosed principles provide for an integrated circuit memory chip comprised of a combination of at least one of an array of high-speed magnetic memory cells, and at least one of an array of high-density magnetic memory cells. Accordingly, a memory chip constructed as disclosed herein provides the benefit of both high-speed and high-density memory cells on the same memory chip. As a result, applications benefiting from the use of (or perhaps even needing) high-speed memory cells are provided by the memory cells in the high-speed memory cell array.

    摘要翻译： 这里公开了一种用于创建用于构建存储器集成电路芯片的高级MRAM阵列的技术。 更具体地，所公开的原理提供了由高速磁存储器单元的阵列中的至少一个和高密度磁存储单元阵列中的至少一个的组合构成的集成电路存储器芯片。 因此，如本文所公开的构造的存储器芯片提供了在相同存储器芯片上的高速和高密度存储器单元的益处。 结果，受益于使用（或甚至需要的）高速存储器单元的应用由高速存储单元阵列中的存储单元提供。