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25 条记录 (耗时 0.036 秒)

    Method of fabricating backside illuminated image sensor
    5.
    发明授权
    Method of fabricating backside illuminated image sensor 有权
    制造背面照明图像传感器的方法

    公开(公告)号：US07648851B2

    公开(公告)日：2010-01-19

    申请号：US11369054

    申请日：2006-03-06

    申请人： Shih-Chu Fu ,  Gwo-Yuh Shiau ,  Liang-Lung Yao ,  Yuan-Chih Hsieh ,  Feng-Jia Shiu

    发明人： Shih-Chu Fu ,  Gwo-Yuh Shiau ,  Liang-Lung Yao ,  Yuan-Chih Hsieh ,  Feng-Jia Shiu

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  Y10S438/977

    摘要： A method for fabricating a back-side illuminated image sensor includes providing a semiconductor substrate having a front surface and back surface, providing a plurality of transistors, metal interconnects, and metal pads on front surface of the substrate, bonding a supporting layer to the front surface of the substrate, thinning-down the semiconductor substrate from the back surface, clearing-out a region of the semiconductor substrate from the back surface that covers a fine alignment mark by performing registration from the back surface and using a global alignment mark as a reference, and processing the back surface of the substrate by performing registration from the back surface and using the fine alignment mark as a reference.

    摘要翻译： 制造背面照明图像传感器的方法包括提供具有前表面和后表面的半导体衬底，在衬底的前表面上提供多个晶体管，金属互连和金属焊盘，将支撑层粘合到前面 基板的表面，从背面减薄半导体基板，通过从后表面进行配准，从覆盖微细对准标记的背面清除半导体基板的区域，并使用全局对准标记作为 通过从后表面进行配准并使用精细对准标记作为参考来处理衬底的背面。

    Planarization method for high wafer topography
    7.
    发明授权
    Planarization method for high wafer topography 有权
    高晶圆地形平面化方法

    公开(公告)号：US08409456B2

    公开(公告)日：2013-04-02

    申请号：US13090763

    申请日：2011-04-20

    申请人： Shun-Wei Lan ,  Jieh-Jang Chen ,  Shih-Wei Lin ,  Feng-Jia Shiu ,  Hung Chang Hsieh

    发明人： Shun-Wei Lan ,  Jieh-Jang Chen ,  Shih-Wei Lin ,  Feng-Jia Shiu ,  Hung Chang Hsieh

    IPC分类号： B44C1/22

    CPC分类号： H01L21/31058 ,  H01L21/31138

    摘要： A method for planarizing a semiconductor device includes providing a substrate having at least one opening therein, each opening defining a lower portion and an upper portion; coating a light sensitive material layer over the substrate, the light sensitive material layer covering the lower and upper portions of the at least one opening; etching back the light sensitive material layer to expose the upper portion of the at least one opening; repeating the steps of coating and etching to remove a predetermined amount below the upper portion of the at least one opening; depositing an insulating layer over the substrate; and planarizing the insulating layer until the upper portion of the at least one opening is exposed.

    摘要翻译： 一种用于平面化半导体器件的方法包括提供其中具有至少一个开口的衬底，每个开口限定下部和上部; 在所述基板上涂覆感光材料层，所述光敏材料层覆盖所述至少一个开口的下部和上部; 蚀刻光敏材料层以暴露至少一个开口的上部; 重复涂覆和蚀刻步骤以除去至少一个开口的上部下方的预定量; 在衬底上沉积绝缘层; 并且平坦化绝缘层，直到暴露至少一个开口的上部。

    Method of measurement in semiconductor fabrication
    8.
    发明授权
    Method of measurement in semiconductor fabrication 有权
    半导体制造中的测量方法

    公开(公告)号：US08178422B2

    公开(公告)日：2012-05-15

    申请号：US12415005

    申请日：2009-03-31

    申请人： Alex Hsu ,  Shih-Chi Fu ,  Feng-Jia Shiu ,  Chia-Shiung Tsai

    发明人： Alex Hsu ,  Shih-Chi Fu ,  Feng-Jia Shiu ,  Chia-Shiung Tsai

    IPC分类号： H01L21/76 ,  H01L21/00 ,  H01L23/544

    CPC分类号： G03F9/7084 ,  G03F7/70633 ,  G03F9/7076 ,  G03F9/7088

    摘要： Provided is a method of fabricating a semiconductor device. The method includes providing a device substrate having a front side and a back side, the device substrate having a first refractive index, forming an embedded target over the front side of the device substrate, forming a reflective layer over the embedded target, forming a media layer over the back side of the device substrate, the media layer having a second refractive index less than the first refractive index, and projecting radiation through the media layer and the device substrate from the back side so that the embedded target is detected for a semiconductor process.

    摘要翻译： 提供一种制造半导体器件的方法。 该方法包括提供具有前侧和后侧的器件衬底，器件衬底具有第一折射率，在器件衬底的前侧上形成嵌入的靶，在嵌入的靶上形成反射层，形成介质 所述介质层具有小于所述第一折射率的第二折射率，并且从所述背面将辐射从所述介质层和所述器件基板突出以使得所述嵌入的靶被检测为半导体 处理。

    Method of fabricating backside illuminated image sensor
    9.
    发明授权
    Method of fabricating backside illuminated image sensor 有权
    制造背面照明图像传感器的方法

    公开(公告)号：US07923344B2

    公开(公告)日：2011-04-12

    申请号：US12634080

    申请日：2009-12-09

    申请人： Shih-Chi Fu ,  Gwo-Yuh Shiau ,  Liang-Lung Yao ,  Yuan-Chih Hsieh ,  Feng-Jia Shiu

    发明人： Shih-Chi Fu ,  Gwo-Yuh Shiau ,  Liang-Lung Yao ,  Yuan-Chih Hsieh ,  Feng-Jia Shiu

    IPC分类号： H01L31/18

    CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  Y10S438/977

    摘要： A method for fabricating a backside illuminated image sensor is provided. An exemplary method can include providing a substrate with a front surface and a back surface; forming a first alignment mark for global alignment on the front surface of the substrate; forming a second alignment mark for fine alignment in a clear-out region on the front surface of the substrate; aligning the substrate from the back surface using the first alignment mark; and removing a portion of the back surface of the substrate at the clear-out region for locating the second alignment mark.

    摘要翻译： 提供了制造背面照明图像传感器的方法。 示例性方法可以包括提供具有前表面和后表面的基底; 在所述基板的前表面上形成用于全局对准的第一对准标记; 形成用于在所述基板的前表面上的透明区域中精细对准的第二对准标记; 使用第一对准标记从背面对准基板; 以及在所述清除区域处去除所述基板的背面的一部分以定位所述第二对准标记。

    Method For Reducing Crosstalk In Image Sensors Using Implant Technology
    10.
    发明申请
    Method For Reducing Crosstalk In Image Sensors Using Implant Technology 有权
    使用植入技术降低图像传感器串扰的方法

    公开(公告)号：US20080217719A1

    公开(公告)日：2008-09-11

    申请号：US11682633

    申请日：2007-03-06

    申请人： J. C. Liu ,  C. H. Cheng ,  Chien-Hsien Tseng ,  Alex Hsu ,  Feng-Jia Shiu ,  Shou-Gwo Wuu

    发明人： J. C. Liu ,  C. H. Cheng ,  Chien-Hsien Tseng ,  Alex Hsu ,  Feng-Jia Shiu ,  Shou-Gwo Wuu

    IPC分类号： H01L31/00 ,  H01L21/76

    CPC分类号： H01L27/1463 ,  H01L27/14689

    摘要： The present disclosure provides an image sensor semiconductor device. A semiconductor substrate having a first-type conductivity is provided. A plurality of sensor elements is formed in the semiconductor substrate. An isolation feature is formed between the plurality of sensor elements. An ion implantation process is performed to form a doped region having the first-type conductivity substantially underlying the isolation feature using at least two different implant energy.

    摘要翻译： 本公开提供了一种图像传感器半导体器件。 提供具有第一类电导率的半导体衬底。 在半导体衬底中形成多个传感器元件。 在多个传感器元件之间形成隔离特征。 执行离子注入工艺以使用至少两种不同的注入能量形成具有基本上位于隔离特征下的第一类型导电的掺杂区域。