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    Nonvolatile memory with controlled voltage boosting speed
    1.
    发明授权
    Nonvolatile memory with controlled voltage boosting speed 有权
    具有控制升压速度的非易失性存储器

    公开(公告)号：US06853582B1

    公开(公告)日：2005-02-08

    申请号：US10312014

    申请日：2000-08-30

    申请人： Yuki Matsuda ,  Tadashi Oda

    发明人： Yuki Matsuda ,  Tadashi Oda

    IPC分类号： G11C8/08 ,  G11C11/34 ,  G11C16/12 ,  G11C16/04

    CPC分类号： G11C16/08 ,  G11C8/08 ,  G11C16/12

    摘要： In a nonvolatile memory in which a load on a boosting circuit changes according to the number of rewrite bytes, the boosting circuit is configured so as to perform voltage boosting at a relatively slow predetermined speed regardless of the number of rewrite bytes, whereby stress applied to each storage element is reduced and rewrite resistance is enhanced.

    摘要翻译： 在升压电路中的负载根据重写字节的数量而变化的非易失性存储器中，升压电路被配置为以相对慢的预定速度执行升压，而不管重写字节的数量如何，由此施加应力 每个存储元件被减少并且改写电阻增强。

    Nonvolatile memory
    2.
    发明申请
    Nonvolatile memory 有权

    公开(公告)号：US20060279995A1

    公开(公告)日：2006-12-14

    申请号：US11504017

    申请日：2006-08-15

    申请人： Yuki Matsuda ,  Tadashi Oda

    发明人： Yuki Matsuda ,  Tadashi Oda

    IPC分类号： G11C16/04

    CPC分类号： G11C16/08 ,  G11C8/08 ,  G11C16/12

    摘要： In a nonvolatile memory in which a load on a boosting circuit changes according to the number of rewrite bytes, the boosting circuit is configured so as to perform voltage boosting at a relatively slow predetermined speed regardless of the number of rewrite bytes, whereby stress applied to each storage element is reduced and rewrite resistance is enhanced.

    Nonvolatile memory
    3.
    发明申请
    Nonvolatile memory 有权
    非易失性存储器

    公开(公告)号：US20050157556A1

    公开(公告)日：2005-07-21

    申请号：US11041452

    申请日：2005-01-25

    申请人： Yuki Matsuda ,  Tadashi Oda

    发明人： Yuki Matsuda ,  Tadashi Oda

    IPC分类号： G11C8/08 ,  G11C11/34 ,  G11C16/12

    CPC分类号： G11C16/08 ,  G11C8/08 ,  G11C16/12

    摘要： In a nonvolatile memory in which a load on a boosting circuit changes according to the number of rewrite bytes, the boosting circuit is configured so as to perform voltage boosting at a relatively slow predetermined speed regardless of the number of rewrite bytes, whereby stress applied to each storage element is reduced and rewrite resistance is enhanced.

    摘要翻译： 在升压电路中的负载根据重写字节的数量而变化的非易失性存储器中，升压电路被配置为以相对慢的预定速度执行升压，而与重写字节数无关，由此施加应力 每个存储元件被减少并且改写电阻增强。

    Nonvolatile memory with controlled voltage boosting speed
    4.
    发明授权
    Nonvolatile memory with controlled voltage boosting speed 有权
    具有控制升压速度的非易失性存储器

    公开(公告)号：US07130218B2

    公开(公告)日：2006-10-31

    申请号：US11041452

    申请日：2005-01-25

    申请人： Yuki Matsuda ,  Tadashi Oda

    发明人： Yuki Matsuda ,  Tadashi Oda

    IPC分类号： G11C16/04

    CPC分类号： G11C16/08 ,  G11C8/08 ,  G11C16/12

    摘要： In a nonvolatile memory in which a load on a boosting circuit changes according to the number of rewrite bytes, the boosting circuit is configured so as to perform voltage boosting at a relatively slow predetermined speed regardless of the number of rewrite bytes, whereby stress applied to each storage element is reduced and rewrite resistance is enhanced.

    摘要翻译： 在升压电路中的负载根据重写字节的数量而变化的非易失性存储器中，升压电路被配置为以相对慢的预定速度执行升压，而不管重写字节的数量如何，由此施加应力 每个存储元件被减少并且改写电阻增强。

    Nonvolatile memory
    5.
    发明授权
    Nonvolatile memory 有权
    非易失性存储器

    公开(公告)号：US06791884B2

    公开(公告)日：2004-09-14

    申请号：US10325907

    申请日：2002-12-23

    申请人： Yuki Matsuda ,  Tadashi Oda

    发明人： Yuki Matsuda ,  Tadashi Oda

    IPC分类号： G11C1604

    CPC分类号： G11C16/08 ,  G11C8/08 ,  G11C16/12

    摘要： In a nonvolatile memory in which a load on a boosting circuit changes according to the number of rewrite bytes, the boosting circuit is configured so as to perform voltage boosting at a relatively slow predetermined speed regardless of the number of rewrite bytes, whereby stress applied to each storage element is reduced and rewrite resistance is enhanced.

    摘要翻译： 在升压电路中的负载根据重写字节的数量而变化的非易失性存储器中，升压电路被配置为以相对慢的预定速度执行升压，而不管重写字节的数量如何，由此施加应力 每个存储元件被减少并且改写电阻增强。

    Nonvolatile memory with erasable parts
    6.
    发明授权
    Nonvolatile memory with erasable parts 有权
    具有可擦除部件的非易失性存储器

    公开(公告)号：US07317640B2

    公开(公告)日：2008-01-08

    申请号：US11504017

    申请日：2006-08-15

    申请人： Yuki Matsuda ,  Tadashi Oda

    发明人： Yuki Matsuda ,  Tadashi Oda

    IPC分类号： G11C16/04

    CPC分类号： G11C16/08 ,  G11C8/08 ,  G11C16/12

    摘要： In a nonvolatile memory in which a load on a boosting circuit changes according to the number of rewrite bytes, the boosting circuit is configured so as to perform voltage boosting at a relatively slow predetermined speed regardless of the number of rewrite bytes, whereby stress applied to each storage element is reduced and rewrite resistance is enhanced.

    摘要翻译： 在升压电路中的负载根据重写字节的数量而变化的非易失性存储器中，升压电路被配置为以相对慢的预定速度执行升压，而不管重写字节的数量如何，由此施加应力 每个存储元件被减少并且改写电阻增强。

    IMAGE READING APPARATUS
    10.
    发明申请
    IMAGE READING APPARATUS 失效
    图像阅读器

    公开(公告)号：US20110249303A1

    公开(公告)日：2011-10-13

    申请号：US13033879

    申请日：2011-02-24

    申请人： Masanari TAKABATAKE ,  Yuki Matsuda

    发明人： Masanari TAKABATAKE ,  Yuki Matsuda

    IPC分类号： H04N1/04

    CPC分类号： H04N1/195 ,  H04N1/00551 ,  H04N2201/0422

    摘要： An image reading apparatus includes an image reading unit that includes light receiving units arranged in two-dimensional array and reads an image on an original in two-dimensional directions, a cover portion that forms a reader chamber with the image reading unit, and a read-start instruction unit that instructs the image reading unit to start reading the image on the original when the original is inserted into the reader chamber. The reader chamber has a space for containing the original therein, and forms an original insertion/ejection port with the cover portion for inserting or ejecting the original therethrough.

    摘要翻译： 图像读取装置包括：图像读取单元，其包括以二维阵列排列的光接收单元，并且以二维方向读取原稿上的图像;形成具有图像读取单元的读取室的盖部;读取单元 开始指示单元，其指示当原稿插入读取器室时，图像读取单元开始读取原稿上的图像。 读取器室具有用于容纳原稿的空间，并且形成具有用于插入或弹出原稿的盖部的原始插入/弹出端口。