公开(公告)号：US20090021119A1

公开(公告)日：2009-01-22

申请号：US10586712

申请日：2005-02-23

申请人： Masahiro Yasumi ,  Kazuki Komaki ,  Yuji Murashima ,  Yuki Nakamura ,  Tetsuo Kawasaki

发明人： Masahiro Yasumi ,  Kazuki Komaki ,  Yuji Murashima ,  Yuki Nakamura ,  Tetsuo Kawasaki

IPC分类号： G01C19/56 ,  H01L41/22

CPC分类号： G01C19/5628 ,  G01C19/5621 ,  Y10T29/42

摘要： A substrate is made of single crystal silicon and having a tuning folk shape. The substrate includes plural arms extending in parallel with each other and a joint section for connecting respecting ends of the arms with each other. An angular velocity sensor includes a barrier layer containing silicon oxide provided on each of the arms of the substrate, a first adhesion layer containing titanium provided on the barrier layer a first electrode layer containing at least one of titanium and titanium oxide provided on the first adhesion layer, an orientation control layer provided on the first electrode layer, a piezoelectric layer provided on the orientation control layer, a second adhesion layer provided on the piezoelectric layer, and a second electrode layer provided on the second adhesion layer. This angular velocity sensor has a small size and stable characteristics.

摘要翻译： 衬底由单晶硅制成并具有调谐民间形状。 基板包括彼此平行延伸的多个臂和用于将臂的相对端彼此连接的接合部。 角速度传感器包括设置在基板的每个臂上的含有氧化硅的阻挡层，在该阻挡层上含有钛的第一粘合层，该第一粘合层含有设置在第一粘合层上的钛和氧化钛中的至少一种 设置在所述第一电极层上的取向控制层，设置在所述取向控制层上的压电层，设置在所述压电层上的第二粘合层，以及设置在所述第二粘合层上的第二电极层。 该角速度传感器具有体积小，性能稳定的特点。

公开(公告)号：US08006357B2

公开(公告)日：2011-08-30

申请号：US11813551

申请日：2006-02-15

申请人： Yuki Nakamura ,  Yuji Murashima ,  Masahiro Yasumi ,  Kazuki Komaki

发明人： Yuki Nakamura ,  Yuji Murashima ,  Masahiro Yasumi ,  Kazuki Komaki

IPC分类号： H01L41/22 ,  H04R17/00 ,  B21D53/76 ,  B23P17/00

CPC分类号： H01L41/257 ,  H01L41/332 ,  Y10T29/42 ,  Y10T29/49401

摘要： In a production method of a piezoelectric element, an unneeded electric field is prevented from being applied to a piezoelectric thin film layer during the production process, resulting in a high performance piezoelectric element production method. The production method includes a first process for depositing an under electrode layer, a piezoelectric thin film layer and an upper electrode layer successively on a substrate such that the under electrode layer and the upper electrode layer form a short-circuit, a second process, after the first process, for etching including dry etching, the second process commenced while the under electrode layer and the upper electrode layer are short-circuited, a third process, after the second process, for polarizing by applying a voltage across the under electrode layer and the upper electrode layer, a fourth process, after the third process, for individualizing each piezoelectric element.

摘要翻译： 在压电元件的制造方法中，在制造工序中，不需要的电场被防止施加于压电薄膜层，从而形成高性能的压电元件的制造方法。 该制造方法包括：在基板上依次沉积下电极层，压电薄膜层和上电极层的第一工艺，使得下电极层和上电极层形成短路，第二工序后 第一工艺，用于蚀刻包括干蚀刻，第二工艺在下电极层和上电极层短路的同时开始;第三工序，在第二工艺之后，通过施加电压跨越下电极层和 上电极层，第四工序，第三工序后，用于使各压电元件个体化。

公开(公告)号：US20100125988A1

公开(公告)日：2010-05-27

申请号：US11813551

申请日：2006-02-15

申请人： Yuki Nakamura ,  Yuji Murashima ,  Masahiro Yasumi ,  Kazuki Komaki

发明人： Yuki Nakamura ,  Yuji Murashima ,  Masahiro Yasumi ,  Kazuki Komaki

IPC分类号： H01L41/22

CPC分类号： H01L41/257 ,  H01L41/332 ,  Y10T29/42 ,  Y10T29/49401

摘要： A method for fabricating a piezoelectric element capable of ensuring high piezoelectric characteristics by preventing generation of unnecessary electric field in a piezoelectric thin film layer during the fabrication process. The method for fabricating a piezoelectric element comprises a first step for depositing a lower electrode layer, a piezoelectric thin film layer and an upper electrode layer sequentially on a substrate, a second step for performing etching including dry etching, a third step for performing polarization by applying a voltage between the lower electrode layer and the upper electrode layer, and a fourth step for segmenting into individual piezoelectric elements wherein the lower electrode layer and the upper electrode layer are held in short circuit state at least when dry etching is performed.

摘要翻译： 一种制造压电元件的方法，其能够通过在制造过程中防止在压电薄膜层中产生不必要的电场而确保高的压电特性。 制造压电元件的方法包括：第一步骤，用于在衬底上依次沉积下电极层，压电薄膜层和上电极层;第二步骤，用于执行包括干蚀刻的蚀刻;第三步骤，用于通过 在下电极层和上电极层之间施加电压，以及第四步骤，用于分割成各个压电元件，其中至少在进行干蚀刻时，下电极层和上电极层保持在短路状态。

公开(公告)号：US06297580B1

公开(公告)日：2001-10-02

申请号：US09446247

申请日：2000-03-28

申请人： Ryouichi Takayama ,  Mitsuhiro Furukawa ,  Yuji Murashima ,  Toru Sakuragawa ,  Koji Nomura

发明人： Ryouichi Takayama ,  Mitsuhiro Furukawa ,  Yuji Murashima ,  Toru Sakuragawa ,  Koji Nomura

IPC分类号： H01L4104

CPC分类号： H03H9/02929 ,  H03H9/14541 ,  H03H9/6483

摘要： As the electrode material of a surface acoustic wave device, a laminated body laminating a second metal layer 5 on a first metal layer 4 is stacked up in two or more stages, and the first metal layer 4 is a metal of which coefficient of diffusion to Al is smaller than the coefficient of self diffusion of Al, and the second metal layer 5 is composed of an Al alloy of three elements or more containing at least one or more metals which forms solid solution with Al at ordinary temperature, and at least one or more metals forming segregation at the grain boundary of Al or an intermetallic compound with Al at ordinary temperature, and therefore the surface acoustic wave device excellent in electric power tolerance, compatible with the conventional pattern forming technology, stable thermally, and capable of preventing increase of insertion loss can be obtained.

摘要翻译： 作为表面声波装置的电极材料，在第一金属层4上层叠第二金属层5的层叠体以两级以上的层叠形成，第一金属层4为扩散系数为 Al小于Al的自扩散系数，第二金属层5由含有至少一种以上在常温下与Al形成固溶体的金属的三种以上的Al合金构成，至少一种 或更多的金属在常温下在Al的晶界处形成偏析或与Al的金属间化合物，因此具有优异的电力公差的表面声波装置，与常规图案形成技术相容，热稳定并且能够防止增加 的插入损失。