公开(公告)号：US08006357B2

公开(公告)日：2011-08-30

申请号：US11813551

申请日：2006-02-15

申请人： Yuki Nakamura ,  Yuji Murashima ,  Masahiro Yasumi ,  Kazuki Komaki

发明人： Yuki Nakamura ,  Yuji Murashima ,  Masahiro Yasumi ,  Kazuki Komaki

IPC分类号： H01L41/22 ,  H04R17/00 ,  B21D53/76 ,  B23P17/00

CPC分类号： H01L41/257 ,  H01L41/332 ,  Y10T29/42 ,  Y10T29/49401

摘要： In a production method of a piezoelectric element, an unneeded electric field is prevented from being applied to a piezoelectric thin film layer during the production process, resulting in a high performance piezoelectric element production method. The production method includes a first process for depositing an under electrode layer, a piezoelectric thin film layer and an upper electrode layer successively on a substrate such that the under electrode layer and the upper electrode layer form a short-circuit, a second process, after the first process, for etching including dry etching, the second process commenced while the under electrode layer and the upper electrode layer are short-circuited, a third process, after the second process, for polarizing by applying a voltage across the under electrode layer and the upper electrode layer, a fourth process, after the third process, for individualizing each piezoelectric element.

摘要翻译： 在压电元件的制造方法中，在制造工序中，不需要的电场被防止施加于压电薄膜层，从而形成高性能的压电元件的制造方法。 该制造方法包括：在基板上依次沉积下电极层，压电薄膜层和上电极层的第一工艺，使得下电极层和上电极层形成短路，第二工序后 第一工艺，用于蚀刻包括干蚀刻，第二工艺在下电极层和上电极层短路的同时开始;第三工序，在第二工艺之后，通过施加电压跨越下电极层和 上电极层，第四工序，第三工序后，用于使各压电元件个体化。

公开(公告)号：US20100125988A1

公开(公告)日：2010-05-27

申请号：US11813551

申请日：2006-02-15

申请人： Yuki Nakamura ,  Yuji Murashima ,  Masahiro Yasumi ,  Kazuki Komaki

发明人： Yuki Nakamura ,  Yuji Murashima ,  Masahiro Yasumi ,  Kazuki Komaki

IPC分类号： H01L41/22

CPC分类号： H01L41/257 ,  H01L41/332 ,  Y10T29/42 ,  Y10T29/49401

摘要： A method for fabricating a piezoelectric element capable of ensuring high piezoelectric characteristics by preventing generation of unnecessary electric field in a piezoelectric thin film layer during the fabrication process. The method for fabricating a piezoelectric element comprises a first step for depositing a lower electrode layer, a piezoelectric thin film layer and an upper electrode layer sequentially on a substrate, a second step for performing etching including dry etching, a third step for performing polarization by applying a voltage between the lower electrode layer and the upper electrode layer, and a fourth step for segmenting into individual piezoelectric elements wherein the lower electrode layer and the upper electrode layer are held in short circuit state at least when dry etching is performed.

摘要翻译： 一种制造压电元件的方法，其能够通过在制造过程中防止在压电薄膜层中产生不必要的电场而确保高的压电特性。 制造压电元件的方法包括：第一步骤，用于在衬底上依次沉积下电极层，压电薄膜层和上电极层;第二步骤，用于执行包括干蚀刻的蚀刻;第三步骤，用于通过 在下电极层和上电极层之间施加电压，以及第四步骤，用于分割成各个压电元件，其中至少在进行干蚀刻时，下电极层和上电极层保持在短路状态。

公开(公告)号：US20090021119A1

公开(公告)日：2009-01-22

申请号：US10586712

申请日：2005-02-23

申请人： Masahiro Yasumi ,  Kazuki Komaki ,  Yuji Murashima ,  Yuki Nakamura ,  Tetsuo Kawasaki

发明人： Masahiro Yasumi ,  Kazuki Komaki ,  Yuji Murashima ,  Yuki Nakamura ,  Tetsuo Kawasaki

IPC分类号： G01C19/56 ,  H01L41/22

CPC分类号： G01C19/5628 ,  G01C19/5621 ,  Y10T29/42

摘要： A substrate is made of single crystal silicon and having a tuning folk shape. The substrate includes plural arms extending in parallel with each other and a joint section for connecting respecting ends of the arms with each other. An angular velocity sensor includes a barrier layer containing silicon oxide provided on each of the arms of the substrate, a first adhesion layer containing titanium provided on the barrier layer a first electrode layer containing at least one of titanium and titanium oxide provided on the first adhesion layer, an orientation control layer provided on the first electrode layer, a piezoelectric layer provided on the orientation control layer, a second adhesion layer provided on the piezoelectric layer, and a second electrode layer provided on the second adhesion layer. This angular velocity sensor has a small size and stable characteristics.

摘要翻译： 衬底由单晶硅制成并具有调谐民间形状。 基板包括彼此平行延伸的多个臂和用于将臂的相对端彼此连接的接合部。 角速度传感器包括设置在基板的每个臂上的含有氧化硅的阻挡层，在该阻挡层上含有钛的第一粘合层，该第一粘合层含有设置在第一粘合层上的钛和氧化钛中的至少一种 设置在所述第一电极层上的取向控制层，设置在所述取向控制层上的压电层，设置在所述压电层上的第二粘合层，以及设置在所述第二粘合层上的第二电极层。 该角速度传感器具有体积小，性能稳定的特点。

公开(公告)号：US11315961B2

公开(公告)日：2022-04-26

申请号：US16486224

申请日：2018-03-15

申请人： Sadanori Arae ,  Yuichi Ando ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Naoyuki Ueda ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Yuichi Ando ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Naoyuki Ueda ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  H01L29/417

摘要： (Object) To miniaturize a field-effect transistor. (Means of Achieving the Object) A field-effect transistor includes a semiconductor film formed on a base, a gate insulating film formed on a part of the semiconductor film, a gate electrode formed on the gate insulating film, and a source electrode and a drain electrode formed in contact with the semiconductor film, wherein a thickness of the source electrode and the drain electrode is smaller than a thickness of the gate insulating film, and the gate insulating film includes a region that is not in contact with the source electrode or the drain electrode.

公开(公告)号：US10204799B2

公开(公告)日：2019-02-12

申请号：US15376895

申请日：2016-12-13

申请人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

发明人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

IPC分类号： H01L21/44 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66 ,  H01L21/477 ,  H01L29/786

摘要： A method for manufacturing a field-effect transistor includes forming an active layer of an oxide semiconductor, forming a conducting film to cover the active layer, patterning the conducting film through an etching process using an etchant to form a source electrode and a drain electrode, and performing, at least before the patterning the conducting film, a treatment on the active layer so that an etching rate of the active layer is less than an etching rate of the conducting film.

公开(公告)号：US10020374B2

公开(公告)日：2018-07-10

申请号：US13515463

申请日：2010-12-22

申请人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe

发明人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe

IPC分类号： H01L29/04 ,  H01L29/49 ,  H01L29/786 ,  H01L29/788 ,  G09G3/20 ,  G09G3/3233 ,  G09G3/36 ,  H01L27/108 ,  H01L27/32 ,  G02F1/1368 ,  G02F1/163

CPC分类号： H01L29/4908 ,  G02F1/1368 ,  G02F2001/1635 ,  G09G3/20 ,  G09G3/3233 ,  G09G3/3648 ,  H01L27/10873 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/7869 ,  H01L29/7881

摘要： A field-effect transistor includes a substrate; a source electrode, a drain electrode, and a gate electrode that are formed on the substrate; a semiconductor layer by which a channel is formed between the source electrode and the drain electrode when a predetermined voltage is applied to the gate electrode; and a gate insulating layer provided between the gate electrode and the semiconductor layer. The gate insulating layer is formed of an amorphous composite metal oxide insulating film including one or two or more alkaline-earth metal elements and one or two or more elements selected from a group consisting of Ga, Sc, Y, and lanthanoid except Ce.

公开(公告)号：US08915219B2

公开(公告)日：2014-12-23

申请号：US13150732

申请日：2011-06-01

申请人： Yuki Nakamura ,  Yasuyuki Sakakibara

发明人： Yuki Nakamura ,  Yasuyuki Sakakibara

IPC分类号： F01P7/02 ,  F01P5/06 ,  F02B63/02 ,  F02B75/16 ,  F01P5/02

CPC分类号： F01P5/06 ,  F01P2005/025 ,  F02B63/02 ,  F02B75/16

摘要： A working machine engine is provided. The air flowing through the front side cooling air flow passage and the upper side cooling air flow passage which are provided in the front side and the upper side of the casing, respectively, and the air flowing through the auxiliary air flow passage provided in the back side of the casing join together near the opening. By this means, the air flowing through the auxiliary air flow passage can change the direction of the air flowing lengthwise through the front side cooling air flow passage and the upper side cooling air flow passage.

摘要翻译： 提供工作机器引擎。 分别设置在壳体的前侧和上侧的流过前侧冷却风流路和上侧冷却风流路的空气以及设置在后侧的辅助空气流路中流动的空气 外壳的一侧在开口附近连接在一起。 通过这种方式，流过辅助空气流动通道的空气可以改变通过前侧冷却空气流动通道和上侧冷却空气流动通道纵向流动的空气的方向。

公开(公告)号：US20140353648A1

公开(公告)日：2014-12-04

申请号：US14360791

申请日：2012-11-28

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Mikiko Takada ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Mikiko Takada ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome

IPC分类号： H01L29/24 ,  H01L27/32 ,  H01L21/02 ,  H01L27/12 ,  G02F1/1368 ,  H01L29/786 ,  H01L29/861

CPC分类号： H01L29/247 ,  C01G19/00 ,  C01G30/00 ,  C01P2002/72 ,  G02F1/1368 ,  H01L21/02422 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02623 ,  H01L21/02628 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3244 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/861

摘要： To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type oxide is amorphous.

摘要翻译： 提供包括氧化物的p型氧化物，其中氧化物包括：Cu; 和选自p族元素的并且可以处于平衡状态的元素M作为离子存在，其中平衡状态是其中存在p的全部电子的状态 - 最外壳的眶骨丢失，并且损失最外壳的全部电子的状态，并且其中p型氧化物是无定形的。

公开(公告)号：US08860146B2

公开(公告)日：2014-10-14

申请号：US13052014

申请日：2011-03-18

申请人： Yuki Nakamura ,  Takehito Ikimura

发明人： Yuki Nakamura ,  Takehito Ikimura

IPC分类号： H01L27/04 ,  H01L27/06

CPC分类号： H01L27/0629

摘要： According to one embodiment, a semiconductor device including a field-effect transistor, and a resistance element connected between a gate electrode of the field effect transistor and a connection point connected between a back gate electrode of the field effect transistor and one of source-drain regions of the field effect transistor, a voltage being applied between the other of the source-drain regions and the gate electrode.

摘要翻译： 根据一个实施例，包括场效应晶体管的半导体器件和连接在场效应晶体管的栅极之间的电阻元件和连接在场效应晶体管的背栅极之间的连接点和源极 - 漏极 场效应晶体管的区域，电压施加在源极 - 漏极区域中的另一个和栅电极之间。

公开(公告)号：US08454249B2

公开(公告)日：2013-06-04

申请号：US13404357

申请日：2012-02-24

申请人： Kohei Nishimura ,  Yuki Nakamura ,  Yusuke Togo

发明人： Kohei Nishimura ,  Yuki Nakamura ,  Yusuke Togo

IPC分类号： G03B9/08

CPC分类号： G03B9/36 ,  G03B9/20

摘要： A second blade-driving mechanism includes second blade-driving first member and second blade-driving second member, only the second blade-driving second member is rotated against elastic force of a blade-driving spring while the second blade-driving first member engages and is locked by a locking member at start of cocking operation of the cocking member to keep a second blade covering an exposure aperture, and the second blade-driving first member is disengaged from locking member at final stage of cocking operation, so the second blade-driving first member can be rotated by elastic force of a second blade-cocking spring and the second blade is made to open the exposure aperture. Staring cocking operation of a focal plane shutter is possible irrespective of the length of time during which imaging information can be transferred from an image sensor to storage via an information-processing circuit.

摘要翻译： 第二叶片驱动机构包括第二叶片驱动第一构件和第二叶片驱动第二构件，只有第二叶片驱动第二构件抵抗叶片驱动弹簧的弹力而旋转，同时第二叶片驱动第一构件接合， 在起动构件的起动操作开始时被锁定构件锁定以保持第二刀片覆盖曝光孔，并且第二刀片驱动第一构件在起动操作的最后阶段与锁定构件脱离接合， 驱动第一构件可以通过第二叶片弹簧的弹力旋转，并且使第二叶片打开曝光孔。 与成像信息可以经由信息处理电路从图像传感器传送到存储的时间长度无关，可以进行焦平面快门的起弧操作。