公开(公告)号：US4508492A

公开(公告)日：1985-04-02

申请号：US445222

申请日：1982-11-29

申请人： Yukio Kusakawa ,  Toshiaki Nakamura ,  Yoshifumi Ina ,  Takashi Inbe

发明人： Yukio Kusakawa ,  Toshiaki Nakamura ,  Yoshifumi Ina ,  Takashi Inbe

IPC分类号： F02M37/08 ,  F02M69/02 ,  F04D5/00 ,  F04B17/00

CPC分类号： F04D5/002 ,  F02M37/08 ,  F02M69/02 ,  F04D5/007 ,  F05B2250/503

摘要： A motor driven fuel pump adapted for use with a fuel injection system of an internal combustion engine has a pump housing and an impeller of regenerative pump type rotatably disposed in the housing and provided with circumferential rows of grooves formed in the opposite end faces of the impeller along the outer peripheral edges thereof. The housing is formed therein with suction and discharge ports and cooperates with the impeller to define a fuel pressurizing passage extending circumferentially of the impeller and surrounding the grooved outer peripheral section thereof. The fuel pressurizing passage is circumferentially interrupted by a partition wall disposed between the suction and discharge ports and extending radially inwardly into close contacting relationship to the outer peripheral section of the impeller to prevent flow of fuel from the discharge port toward the suction port. The discharge port is tangential to the fuel pressurizing passage to facilitate smooth flow of the pressurized fuel from the passage into the discharge port and reduce the amount of material required for the pump housing.

摘要翻译： 适用于内燃机的燃料喷射系统的电动机驱动的燃料泵具有可旋转地设置在壳体中的泵壳体和再生式泵的叶轮，并且设置有形成在叶轮的相对端面中的圆周排的槽 沿着其外围边缘。 壳体在其中形成有吸入和排出端口并与叶轮配合以限定沿叶轮的周向延伸并且围绕其开槽的外周部分的燃料加压通道。 燃料加压通道由设置在吸入口和排出口之间的分隔壁周向地间隔开，并且径向向内延伸到与叶轮的外周部分紧密接触的关系，以防止燃料从排出口流向吸入口。 排出口与燃料加压通道相切，以便加压燃料从通道平稳流入排放口，减少了泵壳所需的材料量。

公开(公告)号：US06864526B2

公开(公告)日：2005-03-08

申请号：US10337827

申请日：2003-01-08

申请人： Takashi Inbe

发明人： Takashi Inbe

IPC分类号： H01L23/52 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L23/522 ,  H01L27/04 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L28/82 ,  H01L21/768 ,  H01L23/5223 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： A capacitor which can be manufactured easily without an addition of photo masks and manufacturing processes is obtained.The capacitor has a plural via plugs (1a to 1c) which function as a first electrode and a plural via plugs (2a to 2c) which function as a second electrode. The via plugs (1a to 1c) are formed in a row along an X direction, and similarly, the via plugs (2a to 2c) are also formed in a row along the X direction. The capacitor is formed in a multilayer wiring structure of a semiconductor device, and the via plugs (1a to 1c) and the via plugs (2a to 2c) face each other with part of an interlayer insulating film between. Part of the interlayer insulating film which is put between the via plugs (1a to 1c) and the via plugs (2a to 2c) function as a capacitor dielectric film.

摘要翻译： 可以容易地制造可以容易地制造的电容器，而不需要添加光掩模和制造工艺。电容器具有多个用作第一电极的通孔塞（1a至1c）和用作第一电极的多个通孔塞（2a至2c） 第二电极。 通孔塞（1a〜1c）沿着X方向成一行，同样地，通孔塞（2a〜2c）也沿X方向成一行。 电容器形成在半导体器件的多层布线结构中，并且通孔塞（1a至1c）和通孔塞（2a至2c）彼此面对，其间具有层间绝缘膜的一部分。 放置在通孔（1a〜1c）和通孔塞（2a〜2c）之间的层间绝缘膜的一部分用作电容器电介质膜。

公开(公告)号：US06774450B2

公开(公告)日：2004-08-10

申请号：US10225148

申请日：2002-08-22

申请人： Takashi Inbe

发明人： Takashi Inbe

IPC分类号： H01L31058

CPC分类号： H01L23/38 ,  H01L2924/0002 ,  H02S10/30 ,  H01L2924/00

摘要： A thermoelectric converting element is constituted of an N-type semiconductor region, a P-type semiconductor region and metal interconnections. The N-type semiconductor region is formed simultaneously with an n31 impurity region and an n+ impurity region of a transistor in an element forming region. The P-type semiconductor region is formed simultaneously with a p− impurity region and a p+ impurity region of another transistor. In addition, the interconnections in the thermoelectric converting element are formed simultaneously with a metal interconnection connected to the transistor. Thus, a semiconductor device can be obtained, in which cooling effect can be readily achieved without increasing production cost.

摘要翻译： 热电转换元件由N型半导体区域，P型半导体区域和金属互连构成。 N型半导体区域与元件形成区域中的晶体管的n + 31个杂质区域和n + +杂质区域同时形成。 P型半导体区域与另一晶体管的p +杂质区和p +杂质区同时形成。 此外，热电转换元件中的互连与与晶体管连接的金属互连同时形成。 因此，可以获得可以容易地实现冷却效果而不增加生产成本的半导体器件。

公开(公告)号：US06705922B1

公开(公告)日：2004-03-16

申请号：US09635191

申请日：2000-08-09

申请人： Takashi Inbe

发明人： Takashi Inbe

IPC分类号： B24B4912

CPC分类号： B24B37/042 ,  B24B49/12

摘要： A semiconductor substrate wafer 2 is supported on a wafer-supporting table 3 so that a surface to be polished is directed upward, a polishing roller 1 is bring to contact with the surface to be polished of the semiconductor substrate wafer 2, and the polishing roller is rolled over the wafer under a pressure whereby a scattering of polishing to the surface of the semiconductor substrate wafer can be eliminated while productivity is increased.

摘要翻译： 半导体衬底晶片2被支撑在晶片支撑台3上，使得待抛光的表面向上指向，抛光辊1与半导体衬底晶片2的被抛光表面接触，并且抛光辊 在压力下滚动晶片，从而可以消除在半导体衬底晶片的表面上抛光的散射，同时提高生产率。