摘要:
A gas discharge display device comprising alternately disposed anodes and cathodes, wherein the anodes and the cathodes are interconnected respectively in multi-phase connections whereby a bar-graph display can be effected by means of a self-scanning function.
摘要:
A method for forming flat display panel phosphor dots is disclosed wherein a conventional printing method or procedure is used in combination with an optical method.The paste film containing the phosphor, photoresist and powdered glass is coated on the surface of the dielectric layer, e.g. lead glass layer by means of the printing method. The paste layer is irradiated by a ultraviolet light through a mask, and after the development of the paste layer has been completed, the remaining hardened portions of the paste layer are subjected to a heat treatment. In this way, phosphor dots having a desired shape can be formed very firmly and very exactly at certain predetermined portions on said dielectric layer.
摘要:
A gas discharge display apparatus comprises at least a number of anodes and cathodes each disposed in opposition to each of the anodes so that the anodes and the cathodes are arrayed alternately with each other. The anodes and the cathodes are wired, respectively, in polyphase connections. Discharge stabilizing resistors are connected in series to the polyphase connections leading to either the anodes or cathodes. Pulse voltages are successively applied to the anodes and the cathodes so that the discharge produced between both electrodes is caused to perform self-scanning, while the pulse voltages are applied to the polyphase connections leading to the anodes during a period determined in accordance with an input signal to be displayed, thereby to produce discharge between selected ones of anodes and cathodes determined in accordance with the input signal, said discharge being imparted with a memory effect. By controlling pulse duration of the pulse voltages applied during the period determined by the input signal, brightness of display element(s) selected in accordance with the input signal is controlled in a rather arbitrary manner.
摘要:
A method for fabricating a compound semiconductor device having a semi-insulating layer of a group III-V compound semiconductor material that contains arsenic as a group V element. The method includes a step of growing the semi-insulating layer from a source gas of the group V element that contains both arsine and an organic compound of arsenic, wherein arsine and the organic compound of arsenic are used simultaneously with a mixing ratio to achieve a desired high resistivity in the semi-insulating layer.