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公开(公告)号：US06207151B1
公开(公告)日：2001-03-27
申请号：US08259152
申请日：1994-06-13
申请人： Yukio Shimazaki , Nobuhiro Kawashima , Miki Suzuki , Yasuhito Tanaka , Ryo Tanaka , Kiyoshi Sakai , Hisahiro Ishiwari
发明人： Yukio Shimazaki , Nobuhiro Kawashima , Miki Suzuki , Yasuhito Tanaka , Ryo Tanaka , Kiyoshi Sakai , Hisahiro Ishiwari
IPC分类号： A61K3849
摘要： Aqueous protein-containing solutions, in which a protein is dissolved at a high concentration at a pH near the isoelectric point of the protein by adding an anionic polymer or a salt thereof to the solution. Pharmaceutical formulations using a physiologically active protein are prepared using this technique.
摘要翻译： 含有蛋白质的溶液，其中蛋白质通过向溶液中加入阴离子聚合物或其盐，在接近蛋白质等电点的pH下以高浓度溶解。 使用该技术制备使用生理活性蛋白质的药物制剂。
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公开(公告)号：US20130009247A1
公开(公告)日：2013-01-10
申请号：US13547393
申请日：2012-07-12
申请人： Kazuya Hanaoka , Miki Suzuki
发明人： Kazuya Hanaoka , Miki Suzuki
IPC分类号： H01L27/12
CPC分类号： H01L21/76823 , H01L21/76825 , H01L25/0657 , H01L27/124 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： It is an object to form a conductive region in an insulating film without forming contact holes in the insulating film. A method is provided, in which an insulating film is formed over a first electrode over a substrate, a first region having many defects is formed at a first depth in the insulating film by adding first ions into the insulating film at a first accelerating voltage; a second region having many defects is formed at a second depth which is different from the first depth in the insulating film by adding second ions into the insulating film at a second accelerating voltage, a conductive material containing a metal element is formed over the first and second regions; and a conductive region which electrically connects the first electrode and the conductive material is formed in the insulating film by diffusing the metal element into the first and second regions.
摘要翻译： 其目的是在绝缘膜中形成导电区域，而不在绝缘膜中形成接触孔。 提供了一种方法，其中在衬底上方的第一电极上形成绝缘膜，通过以第一加速电压将绝缘膜中加入第一离子，在绝缘膜的第一深度处形成具有许多缺陷的第一区域; 通过在第二加速电压下将第二离子加入到绝缘膜中，在第二深度上形成具有许多缺陷的第二区域，该第二深度与绝缘膜中的第一深度不同，在第一深度上形成包含金属元素的导电材料， 第二区; 并且通过将金属元素扩散到第一和第二区域中，在绝缘膜中形成电连接第一电极和导电材料的导电区域。
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公开(公告)号：US20140221363A1
公开(公告)日：2014-08-07
申请号：US14233000
申请日：2012-07-20
申请人： Atsushi Iwata , Chie Shimizu , Miki Suzuki
发明人： Atsushi Iwata , Chie Shimizu , Miki Suzuki
CPC分类号： A01N43/40 , A01N25/00 , A01N37/30 , A01N43/08 , A01N43/50 , A01N43/78 , A01N43/88 , A01N51/00
摘要： The present invention provides a composition for controlling harmful arthropods having an excellent control efficacy on harmful arthropods. A composition for controlling harmful arthropods comprising an amide compound represented by a formula (I); wherein each of symbols are the same as defined in the Description; or salts thereof, and at least one kind of neonicotinoid compounds selected from the group (A) consisting of imidacloprid, clothianidin, thiamethoxiam, dinotefuran, acetamiprid, thiacloprid and nitenpyram, shows an excellent controlling efficacy on harmful arthropods.
摘要翻译： 本发明提供了一种用于控制对有害节肢动物具有优异控制功效的有害节肢动物的组合物。 一种用于控制有害节肢动物的组合物，其包含由式（I）表示的酰胺化合物; 其中每个符号与描述中定义的相同; 或其盐，以及选自吡虫啉，噻虫胺，噻虫胺，呋虫胺，啶虫脒，噻虫啉，烯尼龙等组合的至少一种新烟碱类化合物，对有害节肢动物显示出优异的防治效果。
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公开(公告)号：US20140179692A1
公开(公告)日：2014-06-26
申请号：US14233264
申请日：2012-07-20
申请人： Atsushi Iwata , Chie Shimizu , Miki Suzuki
发明人： Atsushi Iwata , Chie Shimizu , Miki Suzuki
CPC分类号： A01N37/30 , A01N43/08 , A01N43/38 , A01N43/40 , A01N43/50 , A01N43/78 , A01N43/88 , A01N47/40 , A01N51/00
摘要： The present invention provides a composition for controlling harmful arthropods having an excellent control efficacy on harmful arthropods. A composition for controlling harmful arthropods comprising an amide compound represented by a formula (I); wherein each of symbols are the same as defined in the Description; or salts thereof and at least one kind of neonicotinoid compounds selected from the group (A) consisting of imidacloprid, clothianidin, thiamethoxiam, dinotefuran, acetamiprid, thiacloprid and nitenpyram, shows an excellent controlling efficacy on harmful arthropods.
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公开(公告)号：US08530973B2
公开(公告)日：2013-09-10
申请号：US13547393
申请日：2012-07-12
申请人： Kazuya Hanaoka , Miki Suzuki
发明人： Kazuya Hanaoka , Miki Suzuki
IPC分类号： H01L29/786
CPC分类号： H01L21/76823 , H01L21/76825 , H01L25/0657 , H01L27/124 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： It is an object to form a conductive region in an insulating film without forming contact holes in the insulating film. A method is provided, in which an insulating film is formed over a first electrode over a substrate, a first region having many defects is formed at a first depth in the insulating film by adding first ions into the insulating film at a first accelerating voltage; a second region having many defects is formed at a second depth which is different from the first depth in the insulating film by adding second ions into the insulating film at a second accelerating voltage, a conductive material containing a metal element is formed over the first and second regions; and a conductive region which electrically connects the first electrode and the conductive material is formed in the insulating film by diffusing the metal element into the first and second regions.
摘要翻译： 其目的是在绝缘膜中形成导电区域，而不在绝缘膜中形成接触孔。 提供了一种方法，其中在衬底上方的第一电极上形成绝缘膜，通过以第一加速电压将绝缘膜中加入第一离子，在绝缘膜的第一深度处形成具有许多缺陷的第一区域; 通过在第二加速电压下将第二离子加入到绝缘膜中，在第二深度上形成具有许多缺陷的第二区域，该第二深度与绝缘膜中的第一深度不同，在第一深度上形成包含金属元素的导电材料， 第二区; 并且通过将金属元素扩散到第一和第二区域中，在绝缘膜中形成电连接第一电极和导电材料的导电区域。
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公开(公告)号：US07554305B2
公开(公告)日：2009-06-30
申请号：US10985905
申请日：2004-11-12
申请人： Hideo Nunokawa , Tatsuo Kato , Miki Suzuki , Tomonari Morishita
发明人： Hideo Nunokawa , Tatsuo Kato , Miki Suzuki , Tomonari Morishita
IPC分类号： G05F1/56
CPC分类号： G05F1/575
摘要： Even when, for example, electric charge is injected into the output transistor due to external factor such as a noise from the outside, to prevent the step-down voltage from rising, the step-down circuit is comprised of an N channel type output transistor which controls the voltage at the control end, a booster, which is connected to the control end of the output transistor and raises the voltage at the control end and a discharge circuit, which discharges the electric charge at the control end of the output transistor so that the power supply voltage inputted from the input end is stepped down to a desired step-down voltage and outputted from the output end.
摘要翻译： 即使例如，由于诸如来自外部的噪声等外部因素将电荷注入到输出晶体管中，为了防止降压电压上升，降压电路由N沟道型输出晶体管 其控制控制端的电压，升压器，其连接到输出晶体管的控制端并提高控制端的电压，以及放电电路，其在输出晶体管的控制端放电电 从输入端输入的电源电压被降低到期望的降压电压并从输出端输出。
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公开(公告)号：US08766361B2
公开(公告)日：2014-07-01
申请号：US13315322
申请日：2011-12-09
申请人： Junichi Koezuka , Satoshi Shinohara , Miki Suzuki , Hideto Ohnuma
发明人： Junichi Koezuka , Satoshi Shinohara , Miki Suzuki , Hideto Ohnuma
IPC分类号： H01L27/12
CPC分类号： H01L29/66772 , H01L27/1288 , H01L29/66492 , H01L29/78624
摘要： A semiconductor device is provided, which includes a single crystal semiconductor layer formed over an insulating surface and having a source region, a drain region, and a channel formation region, a gate insulating film covering the single crystal semiconductor layer and a gate electrode overlapping with the channel formation region with the gate insulating film interposed therebetween. In the semiconductor device, at least the drain region of the source and drain regions includes a first impurity region adjacent to the channel formation region and a second impurity region adjacent to the first impurity region. A maximum of an impurity concentration distribution in the first impurity region in a depth direction is closer to the insulating surface than a maximum of an impurity concentration distribution in the second impurity region in a depth direction.
摘要翻译： 提供了一种半导体器件，其包括形成在绝缘表面上并具有源极区，漏极区和沟道形成区的单晶半导体层，覆盖单晶半导体层的栅极绝缘膜和与 沟道形成区域之间插入栅极绝缘膜。 在半导体器件中，源极和漏极区域的至少漏极区域包括与沟道形成区域相邻的第一杂质区域和与第一杂质区域相邻的第二杂质区域。 与深度方向上的第二杂质区域的杂质浓度分布的最大值相比，深度方向上的第一杂质区域的杂质浓度分布的最大值比绝缘面更接近。
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公开(公告)号：US20060012354A1
公开(公告)日：2006-01-19
申请号：US10985905
申请日：2004-11-12
申请人： Hideo Nunokawa , Tatsuo Kato , Miki Suzuki , Tomonari Morishita
发明人： Hideo Nunokawa , Tatsuo Kato , Miki Suzuki , Tomonari Morishita
IPC分类号： G05F1/56
CPC分类号： G05F1/575
摘要： Even when, for example, electric charge is injected into the output transistor due to external factor such as a noise from the outside, to prevent the step-down voltage from rising, the step-down circuit is comprised of an N channel type output transistor which controls the voltage at the control end, a booster, which is connected to the control end of the output transistor and raises the voltage at the control end and a discharge circuit, which discharges the electric charge at the control end of the output transistor so that the power supply voltage inputted from the input end is stepped down to a desired step-down voltage and outputted from the output end.
摘要翻译： 即使例如，由于诸如来自外部的噪声等外部因素将电荷注入到输出晶体管中，为了防止降压电压上升，降压电路由N沟道型输出晶体管 其控制控制端的电压，升压器，其连接到输出晶体管的控制端并提高控制端的电压，以及放电电路，其在输出晶体管的控制端放电电 从输入端输入的电源电压被降低到期望的降压电压并从输出端输出。
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公开(公告)号：USD468198S1
公开(公告)日：2003-01-07
申请号：US29140707
申请日：2001-04-23
申请人： Manami Nakazawa , Miki Suzuki , Megumi Nakamura
设计人： Manami Nakazawa , Miki Suzuki , Megumi Nakamura
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公开(公告)号：US09301522B2
公开(公告)日：2016-04-05
申请号：US14232992
申请日：2012-07-20
申请人： Atsushi Iwata , Chie Shimizu , Miki Suzuki
发明人： Atsushi Iwata , Chie Shimizu , Miki Suzuki
摘要： The present invention provides a composition for controlling harmful arthropods having an excellent control efficacy on harmful arthropods. A composition for controlling harmful arthropods comprising a carboxylic acid compound represented by a formula (I); wherein each of symbols are the same as defined in the Description; or salts thereof and at least one kind of neonicotinoid compounds selected from the group (A) consisting of imidacloprid, clothianidin, thiamethoxam, dinotefuran, acetamiprid, thiacloprid and nitenpyram, shows an excellent controlling efficacy on harmful arthropods.
摘要翻译： 本发明提供了一种用于控制对有害节肢动物具有优异控制功效的有害节肢动物的组合物。 一种用于控制有害节肢动物的组合物，其包含由式（I）表示的羧酸化合物; 其中每个符号与描述中定义的相同; 或其盐和选自由吡虫啉，噻虫胺，噻虫嗪，呋虫胺，啶虫脒，噻虫啉和烯尼龙嘧啶组成的组（A）中的至少一种新烟碱类化合物对有害节肢动物显示出优异的防治效果。
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