Substrate transport device
    1.
    发明授权
    Substrate transport device 有权
    基板运输装置

    公开(公告)号:US07597186B2

    公开(公告)日:2009-10-06

    申请号:US11616252

    申请日:2006-12-26

    IPC分类号: B65G35/00

    CPC分类号: G03G15/6529 B65G54/02

    摘要: A substrate transport device includes a chamber, a rotary wheel, a first magnet, a carrier, and a second magnet. The rotary wheel is disposed outside the chamber. The first magnet is disposed on the rotary wheel. The carrier is disposed in the chamber. The second magnet is disposed on the carrier.

    摘要翻译: 基板输送装置包括室,旋转轮,第一磁体,载体和第二磁体。 旋转轮设置在室外。 第一磁铁设置在旋转轮上。 载体设置在腔室中。 第二磁体设置在载体上。

    SUBSTRATE TRANSPORT DEVICE
    2.
    发明申请
    SUBSTRATE TRANSPORT DEVICE 有权
    基板运输装置

    公开(公告)号:US20080038020A1

    公开(公告)日:2008-02-14

    申请号:US11616252

    申请日:2006-12-26

    IPC分类号: G03G15/08

    CPC分类号: G03G15/6529 B65G54/02

    摘要: A substrate transport device includes a chamber, a rotary wheel, a first magnet, a carrier, and a second magnet. The rotary wheel is disposed outside the chamber. The first magnet is disposed on the rotary wheel. The carrier is disposed in the chamber. The second magnet is disposed on the carrier.

    摘要翻译: 基板输送装置包括室,旋转轮,第一磁体,载体和第二磁体。 旋转轮设置在室外。 第一磁铁设置在旋转轮上。 载体设置在腔室中。 第二磁体设置在载体上。

    SOLAR CELL AND METHOD FOR FORMING THE SAME
    3.
    发明申请
    SOLAR CELL AND METHOD FOR FORMING THE SAME 审中-公开
    太阳能电池及其形成方法

    公开(公告)号:US20090050202A1

    公开(公告)日:2009-02-26

    申请号:US11969225

    申请日:2008-01-04

    IPC分类号: H01L31/0224 H01L31/04

    CPC分类号: H01L31/022425 Y02E10/50

    摘要: The invention is directed to a solar cell. The solar cell comprises a silicon layer, a front side electrode and a back side electrode. The silicon layer has a first surface and a second surface. The front side electrode is located on the first surface of the silicon layer. The back side electrode is located on the second surface of the silicon layer. Further, the back side electrode comprises a passivation layer, a first conductive layer and a second conductive layer. The passivation layer is located on the second surface of the silicon layer and has a plurality of holes penetrating through the passivation layer. The first conductive layer is located on the passivation layer and is electrically connected to the silicon layer through the holes. The second conductive layer is located on the first conductive layer.

    摘要翻译: 本发明涉及一种太阳能电池。 太阳能电池包括硅层,前侧电极和背面电极。 硅层具有第一表面和第二表面。 前侧电极位于硅层的第一表面上。 背面电极位于硅层的第二表面上。 此外,背面电极包括钝化层,第一导电层和第二导电层。 钝化层位于硅层的第二表面上,并且具有贯穿钝化层的多个孔。 第一导电层位于钝化层上,并通过该孔与硅层电连接。 第二导电层位于第一导电层上。

    Electropolishing process means for an inner surface of a long tube
    5.
    发明授权
    Electropolishing process means for an inner surface of a long tube 失效
    电解抛光工艺用于长管的内表面

    公开(公告)号:US06660138B2

    公开(公告)日:2003-12-09

    申请号:US10076289

    申请日:2002-02-19

    IPC分类号: B23H1100

    CPC分类号: C25F3/16 C25F7/00

    摘要: The present invention is an electropolishing process and device for electropolishing an inner surface of a long tube, especially applied to a long tube of greater than two meters and a diameter range between 0.3 and 5 cm. Wherein, the present invention comprises at least one tube, and one complex electrode. An inner surface of the tube is for electropolishing process, and it is an anode as well. The electrode is a cathode and placed on a center of a partition. An end of electrode connects to a cable, the cable is driven by an axial mechanism to be moved the electrode toward the axial mechanism itself. Inside of the tube is full o electrolyte, which is an electrifying medium to connect both anode and cathode. Further, electrolyte cooperates with the electrode to perform the electropolishing process on the inner surface of tube.

    摘要翻译: 本发明是用于电解抛光长管的内表面的电抛光方法和装置,特别是应用于大于2米的长管和0.3和5cm之间的直径范围。 其中,本发明包括至少一个管和一个复合电极。 管的内表面用于电解抛光工艺,它也是阳极。 电极是阴极并放置在隔板的中心。 电极的一端连接到电缆,电缆由轴向机构驱动,以将电极移向轴向机构本身。 管内是全o电解质,它是连接阳极和阴极的通电介质。 此外,电解质与电极配合以在管的内表面上进行电解抛光处理。

    Mass flow controller automation method and related system
    6.
    发明授权
    Mass flow controller automation method and related system 失效
    质量流量控制器自动化方法及相关系统

    公开(公告)号:US06439254B1

    公开(公告)日:2002-08-27

    申请号:US09727653

    申请日:2000-11-30

    IPC分类号: F16K3102

    摘要: An MFC controlling device automation method and related system. The method mainly comprises the steps of automatically controlled algorithmic obtaining of MFC open loop system parameters by an identification technique; automatically controlled algorithmic determining of PI control parameters by a dominant pole-placement method; and automatically controlled calculating of a fuzzy logic rule table. The steps form an automatically controlled single closed loop. By performing said steps, multiple PI control parameter sets are obtainable fast and in an automatic way, and a calculation is done to form a refined fuzzy rule data table, so that a greatly enhanced MFC reaction function is attained.

    摘要翻译: 一种MFC控制装置自动化方法及相关系统。 该方法主要包括以下步骤:通过识别技术自动控制MFC开环系统参数的获取; 通过主导极位置法自动控制PI控制参数的算法确定; 并自动控制模糊逻辑规则表的计算。 步骤形成一个自动控制的单闭环。 通过执行所述步骤,可以快速且自动地获得多个PI控制参数集,并进行计算以形成精确的模糊规则数据表,从而获得大大增强的MFC反应功能。

    ATOMIC LAYER DEPOSITION APPARATUS
    7.
    发明申请
    ATOMIC LAYER DEPOSITION APPARATUS 审中-公开
    原子层沉积装置

    公开(公告)号:US20100083900A1

    公开(公告)日:2010-04-08

    申请号:US12427763

    申请日:2009-04-22

    IPC分类号: C23C16/00

    CPC分类号: C23C16/45544

    摘要: An atomic layer deposition apparatus is provided. The atomic layer deposition apparatus includes a reaction chamber, a first heater, a second heater, a first gas supply system, a second gas supply system and a vacuum system. The vacuum system is connected to the reaction chamber. The reaction chamber includes a preheating chamber and a plating chamber connected to the preheating chamber. The first heater is for heating the preheating chamber. The first gas supply system is connected to the preheating chamber. The second heater is for heating the plating chamber. The second gas supply system is connected to the plating chamber.

    摘要翻译: 提供原子层沉积装置。 原子层沉积设备包括反应室,第一加热器,第二加热器,第一气体供应系统,第二气体供应系统和真空系统。 真空系统连接到反应室。 反应室包括预热室和连接到预热室的电镀室。 第一个加热器是用于加热预热室。 第一气体供应系统连接到预热室。 第二个加热器用于加热电镀室。 第二气体供应系统连接到电镀室。