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    Electropolishing process means for an inner surface of a long tube
    2.
    发明授权
    Electropolishing process means for an inner surface of a long tube 失效
    电解抛光工艺用于长管的内表面

    公开(公告)号：US06660138B2

    公开(公告)日：2003-12-09

    申请号：US10076289

    申请日：2002-02-19

    申请人： Chun-Hung Lin ,  Chen-Der Tsai ,  Yun-Sheng Chung ,  Chin-Ching Wu ,  Yuh-Feng Chen ,  Hann-Tsong Wang

    发明人： Chun-Hung Lin ,  Chen-Der Tsai ,  Yun-Sheng Chung ,  Chin-Ching Wu ,  Yuh-Feng Chen ,  Hann-Tsong Wang

    IPC分类号： B23H1100

    CPC分类号： C25F3/16 ,  C25F7/00

    摘要： The present invention is an electropolishing process and device for electropolishing an inner surface of a long tube, especially applied to a long tube of greater than two meters and a diameter range between 0.3 and 5 cm. Wherein, the present invention comprises at least one tube, and one complex electrode. An inner surface of the tube is for electropolishing process, and it is an anode as well. The electrode is a cathode and placed on a center of a partition. An end of electrode connects to a cable, the cable is driven by an axial mechanism to be moved the electrode toward the axial mechanism itself. Inside of the tube is full o electrolyte, which is an electrifying medium to connect both anode and cathode. Further, electrolyte cooperates with the electrode to perform the electropolishing process on the inner surface of tube.

    摘要翻译： 本发明是用于电解抛光长管的内表面的电抛光方法和装置，特别是应用于大于2米的长管和0.3和5cm之间的直径范围。 其中，本发明包括至少一个管和一个复合电极。 管的内表面用于电解抛光工艺，它也是阳极。 电极是阴极并放置在隔板的中心。 电极的一端连接到电缆，电缆由轴向机构驱动，以将电极移向轴向机构本身。 管内是全o电解质，它是连接阳极和阴极的通电介质。 此外，电解质与电极配合以在管的内表面上进行电解抛光处理。

    Film removal method and apparatus
    4.
    发明申请
    Film removal method and apparatus 有权
    薄膜去除方法和装置

    公开(公告)号：US20080185017A1

    公开(公告)日：2008-08-07

    申请号：US12078505

    申请日：2008-04-01

    申请人： Chia-Chiang Chang ,  Chin-Jyi Wu ,  Chen-Der Tsai ,  Chun-Hung Lin

    发明人： Chia-Chiang Chang ,  Chin-Jyi Wu ,  Chen-Der Tsai ,  Chun-Hung Lin

    IPC分类号： B08B6/00

    CPC分类号： H01J37/32825 ,  G02F1/1303 ,  G02F2001/1316 ,  G03F7/427 ,  H01J37/32366 ,  H01J37/32623 ,  H05H2001/3463

    摘要： A film removal method and apparatus for removing a film from a substrate are disclosed. The method comprises the steps of disposing a plasma generator and a sucking apparatus over the substrate, projecting a plasma beam from the plasma generator onto the film obliquely, disposing the sucking apparatus on a reflection path of plasma projected by the plasma generator, and sucking a by-product of an incomplete plasma reaction occurring to the film so as to keep a surface of the substrate clean, with a view to overcoming the drawbacks of deposition of the by-product which results from using the plasma as a surface cleansing means under atmospheric conditions.

    摘要翻译： 公开了一种从基板上去除膜的膜去除方法和装置。 该方法包括以下步骤：将等离子体发生器和吸附装置设置在衬底上，将等离子体发生器的等离子体束倾斜地投射到膜上，将吸引装置设置在由等离子体发生器投射的等离子体的反射路径上， 为了克服在大气压下使用等离子体作为表面清洁装置产生的副产物沉积的缺点，膜的发生不完全等离子体反应的副产物是保持基板的表面清洁的副产物 条件。

    Plasma deposition apparatus and deposition method utilizing same
    5.
    发明授权
    Plasma deposition apparatus and deposition method utilizing same 有权
    等离子体沉积设备及其沉积方法

    公开(公告)号：US07923076B2

    公开(公告)日：2011-04-12

    申请号：US11644861

    申请日：2006-12-21

    申请人： Chia-Chiang Chang ,  Chin-Jyi Wu ,  Shin-Chih Liaw ,  Chun-Hung Lin

    发明人： Chia-Chiang Chang ,  Chin-Jyi Wu ,  Shin-Chih Liaw ,  Chun-Hung Lin

    IPC分类号： H05H1/24 ,  C23C16/00

    CPC分类号： C23C16/402 ,  C23C16/345 ,  C23C16/45563 ,  C23C16/45595 ,  C23C16/513

    摘要： A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle θ1 of 0° to 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting apparatus is placed in the chamber and over the pedestal. The gas-extracting apparatus comprises a gas-extracting pipe providing a pumping path for particles and side-products having a pumping direction angle θ2 of 0° to 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe.

    摘要翻译： 提供了一种等离子体沉积装置。 等离子体沉积设备包括一个室。 底座放置在腔室中。 等离子体发生器放置在腔室中并在基座上方。 等离子体发生器包括用于等离子体薄膜沉积的等离子体射流，其具有在基座的法线方向与等离子体射流的排出方向之间的0°至90°之间的放电方向角度θ。 气体提取装置放置在腔室中并且在基座上方。 气体提取装置包括：气体提取管，其提供用于颗粒的泵送路径和具有泵送方向角度的副产物;在基座的法线方向和气体提取装置的泵送方向之间为0°至90°的2°; 抽管。

    Method for producing alignment layer for liquid crystal panel
    7.
    发明授权
    Method for producing alignment layer for liquid crystal panel 有权
    液晶面板制作方法

    公开(公告)号：US07532300B2

    公开(公告)日：2009-05-12

    申请号：US11503191

    申请日：2006-08-14

    申请人： Huang-Chin Tang ,  Chun-Hung Lin ,  Chih-Wei Chen ,  Chin-Jyi Wu ,  Chen-Der Tsai ,  Chin-Yang Lee

    发明人： Huang-Chin Tang ,  Chun-Hung Lin ,  Chih-Wei Chen ,  Chin-Jyi Wu ,  Chen-Der Tsai ,  Chin-Yang Lee

    IPC分类号： G02F1/13 ,  C09K19/00

    CPC分类号： G02F1/13378 ,  Y10T428/1005

    摘要： A method for producing an alignment layer for a liquid crystal panel, which is produced by modifying an alignment film in a fixed direction and at a fixed angle by using an atmospheric pressure plasma source to form a uniform and isotropic alignment layer on the surface of the substrate. The resultant alignment layer has good uniformity and high anchoring energy, and the pre-tilt angle can be selected as desired. In addition, there are no problems with static charge generation, dust pollution and the like as in the prior arts. The method of the present invention is not restricted by vacuum apparatuses that need ion alignment or vacuum plasma alignment and the like and is not restricted by the size of the equipment. Therefore, the method of the present invention is suitable for treating the surface of an alignment layer of a large size liquid crystal panel.

    摘要翻译： 一种用于制造液晶面板取向层的方法，其通过使用大气压等离子体源在固定方向和固定角度下修正取向膜而在其表面上形成均匀且各向同性的取向层 基质。 所得到的取向层具有良好的均匀性和较高的锚固能，并且可以根据需要选择预倾角。 此外，与现有技术相同，静电荷产生，粉尘污染等没有问题。 本发明的方法不受需要离子对准或真空等离子体对准等的真空装置的限制，并且不受设备尺寸的限制。 因此，本发明的方法适用于处理大尺寸液晶面板的取向层的表面。

    Film removal method and apparatus
    8.
    发明授权
    Film removal method and apparatus 有权
    薄膜去除方法和装置

    公开(公告)号：US07507313B2

    公开(公告)日：2009-03-24

    申请号：US11527443

    申请日：2006-09-27

    申请人： Chia-Chiang Chang ,  Chin-Jyi Wu ,  Chen-Der Tsai ,  Chun-Hung Lin

    发明人： Chia-Chiang Chang ,  Chin-Jyi Wu ,  Chen-Der Tsai ,  Chun-Hung Lin

    IPC分类号： C23F1/00 ,  H01L21/306

    CPC分类号： H01J37/32825 ,  G02F1/1303 ,  G02F2001/1316 ,  G03F7/427 ,  H01J37/32366 ,  H01J37/32623 ,  H05H2001/3463

    摘要： A film removal method and apparatus for removing a film from a substrate are disclosed. The method comprises the steps of disposing a plasma generator and a sucking apparatus over the substrate, projecting a plasma beam from the plasma generator onto the film obliquely, disposing the sucking apparatus on a reflection path of plasma projected by the plasma generator, and sucking a by-product of an incomplete plasma reaction occurring to the film so as to keep a surface of the substrate clean, with a view to overcoming the drawbacks of deposition of the by-product which results from using the plasma as a surface cleansing means under atmospheric conditions.

    摘要翻译： 公开了一种从基板上去除膜的膜去除方法和装置。 该方法包括以下步骤：将等离子体发生器和吸附装置设置在衬底上，将等离子体发生器的等离子体束倾斜地投射到膜上，将吸引装置设置在由等离子体发生器投射的等离子体的反射路径上， 为了克服在大气压下使用等离子体作为表面清洁装置产生的副产物沉积的缺点，膜的发生不完全等离子体反应的副产物是保持基板的表面清洁的副产物 条件。

    Method for producing alignment layer for liquid crystal panel
    9.
    发明申请
    Method for producing alignment layer for liquid crystal panel 有权
    液晶面板制作方法

    公开(公告)号：US20070128377A1

    公开(公告)日：2007-06-07

    申请号：US11503191

    申请日：2006-08-14

    申请人： Huang-Chin Tang ,  Chun-Hung Lin ,  Chih-Wei Chen ,  Chin-Jyi Wu ,  Chen-Der Tsai ,  Chin-Yang Lee

    发明人： Huang-Chin Tang ,  Chun-Hung Lin ,  Chih-Wei Chen ,  Chin-Jyi Wu ,  Chen-Der Tsai ,  Chin-Yang Lee

    IPC分类号： C09K19/00 ,  G02F1/1337

    CPC分类号： G02F1/13378 ,  Y10T428/1005

    摘要： A method for producing an alignment layer for a liquid crystal panel, which is produced by modifying an alignment film in a fixed direction and at a fixed angle by using an atmospheric pressure plasma source to form a uniform and isotropic alignment layer on the surface of the substrate. The resultant alignment layer has good uniformity and high anchoring energy, and the pre-tilt angle can be selected as desired. In addition, there are no problems with static charge generation, dust pollution and the like as in the prior arts. The method of the present invention is not restricted by vacuum apparatuses that need ion alignment or vacuum plasma alignment and the like and is not restricted by the size of the equipment. Therefore, the method of the present invention is suitable for treating the surface of an alignment layer of a large size liquid crystal panel.

    摘要翻译： 一种用于制造液晶面板取向层的方法，其通过使用大气压等离子体源在固定方向和固定角度下修正取向膜而在其表面上形成均匀且各向同性的取向层 基质。 所得到的取向层具有良好的均匀性和较高的锚固能，并且可以根据需要选择预倾角。 此外，与现有技术相同，静电荷产生，粉尘污染等没有问题。 本发明的方法不受需要离子对准或真空等离子体对准等的真空装置的限制，并且不受设备尺寸的限制。 因此，本发明的方法适用于处理大尺寸液晶面板的取向层的表面。

    Plasma deposition apparatus and deposition method utilizing same
    10.
    发明授权
    Plasma deposition apparatus and deposition method utilizing same 有权
    等离子体沉积设备及其沉积方法

    公开(公告)号：US08281741B2

    公开(公告)日：2012-10-09

    申请号：US13019269

    申请日：2011-02-01

    申请人： Chia-Chiang Chang ,  Chin-Jyi Wu ,  Shin-Chih Liaw ,  Chun-Hung Lin

    发明人： Chia-Chiang Chang ,  Chin-Jyi Wu ,  Shin-Chih Liaw ,  Chun-Hung Lin

    IPC分类号： C23C16/455 ,  C23C16/452 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

    CPC分类号： C23C16/402 ,  C23C16/345 ,  C23C16/45563 ,  C23C16/45595 ,  C23C16/513

    摘要： A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle θ1 larger than 0° and less than 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting pipe extends into the chamber and over the pedestal. The gas-extracting pipe provides a pumping path for particles and side-products having a pumping direction angle θ2 larger than 0° and less than 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe. The chamber is kept at an ambient atmospheric pressure.

    摘要翻译： 提供了一种等离子体沉积装置。 等离子体沉积设备包括一个室。 底座放置在腔室中。 等离子体发生器放置在腔室中并在基座上方。 等离子体发生器包括用于等离子体薄膜沉积的等离子体射流，其具有放电方向角度θ;在基座的法线方向与等离子体射流的排出方向之间大于0°且小于90°的1。 气体提取管延伸到腔室中并且在基座上。 气体提取管为具有泵送方向角度的颗粒和副产物提供泵送路径; 2在基座的法线方向与气体提取管的泵送方向之间大于0°且小于90°。 室保持在环境大气压力。