-
公开(公告)号:US06333531B1
公开(公告)日:2001-12-25
申请号:US09239655
申请日:1999-01-29
申请人: Yun-Yu Wang , Johnathan E. Faltermeier , Philip L. Flaitz , Jeffery L. Hurd , Rajarao Jammy , Radhika Srinivasan , Francis G. Trudeau , Dinah S. Weiss
发明人: Yun-Yu Wang , Johnathan E. Faltermeier , Philip L. Flaitz , Jeffery L. Hurd , Rajarao Jammy , Radhika Srinivasan , Francis G. Trudeau , Dinah S. Weiss
IPC分类号: H01L27108
CPC分类号: H01L27/10867
摘要: A process for forming a small grain structure in a material within a semiconductor device near the interface of an adjacent dissimilar material, to result in a highly diffusive grain structure. The highly diffusive grain structure formed within one material enhances diffusion of a dopant impurity, and provides for improved dopant control in an adjacent dissimilar material.
摘要翻译: 在邻近异种材料的界面附近的半导体器件内的材料中形成小晶粒结构的工艺,导致高扩散晶粒结构。 在一种材料内部形成的高度扩散的晶粒结构增强了掺杂杂质的扩散,并提供了在相邻不同材料中的改进的掺杂剂控制。
-
公开(公告)号:US4839715A
公开(公告)日:1989-06-13
申请号:US87478
申请日:1987-08-20
IPC分类号: H01L21/3205 , H01L21/60 , H01L21/768 , H01L23/485 , H01L23/522
CPC分类号: H01L21/76897 , H01L23/4855 , H01L2924/0002
摘要: An integrated circuit chip including a first and a higher second surface levels with an abrupt sidewall step transition therebetween, and having a first layer of a first conductive material disposed over the first surface level and over the second surface level, but terminating on the first surface level in a first end portion which extends up to but does not touch the sidewall. This end portion comprises a conductive material which has been converted to an insulator. A second layer of a second conductive material is disposed on top of the first conductive layer with essentially no conductive material conversion to insulator therein adjacent to the abrupt sidewall transition. In a preferred embodiment, the conductive material is an alloy of aluminum and the end portion is aluminum oxide.
-