公开(公告)号：US5444005A

公开(公告)日：1995-08-22

申请号：US246277

申请日：1994-05-19

申请人： Yun-gi Kim ,  Fui-song Kim ,  Jin-seok Choi ,  Jong-ho Park

发明人： Yun-gi Kim ,  Fui-song Kim ,  Jin-seok Choi ,  Jong-ho Park

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L27/10852 ,  H01L28/92 ,  Y10S438/947

摘要： A method for manufacturing a capacitor of a semiconductor memory device. A conductive layer is formed on the semiconductor substrate and a photoresist pattern is formed on the conductive layer. The conductive layer is etched, using the photoresist pattern as a mask to form a first step-portion in the conductive layer. A first spacer is formed on a sidewall of the photoresist pattern, which may be formed by flowing the photoresist pattern. The conductive layer is etched, using the first spacer as a mask, to form a second step-portion in the conductive layer. The photoresist pattern and the first spacer is removed. A first material layer is formed on the entire surface of the resultant structure and etched to form a second spacer on the sidewalls of the first and second step-portions. The conductive layer is etched, using the second spacer as a mask, to form a storage electrode of a capacitor. Cell capacitance may be increased by a simple process, and the heat cycle may be reduced.

摘要翻译： 一种半导体存储器件的电容器的制造方法。 在半导体衬底上形成导电层，并且在导电层上形成光刻胶图案。 使用光致抗蚀剂图案作为掩模蚀刻导电层，以在导电层中形成第一台阶部分。 在光致抗蚀剂图案的侧壁上形成第一间隔物，其可以通过使光致抗蚀剂图案流动而形成。 使用第一间隔件作为掩模蚀刻导电层，以在导电层中形成第二台阶部分。 去除光致抗蚀剂图案和第一间隔物。 第一材料层形成在所得结构的整个表面上并被蚀刻以在第一和第二台阶部分的侧壁上形成第二间隔物。 使用第二间隔物作为掩模蚀刻导电层，以形成电容器的存储电极。 可以通过简单的工艺来增加电池电容，并且可以减少热循环。