公开(公告)号：US4220874A

公开(公告)日：1980-09-02

申请号：US880158

申请日：1978-02-22

申请人： Yutaka Iwata ,  Seiichi Takahashi ,  Katsuzo Kaminishi

发明人： Yutaka Iwata ,  Seiichi Takahashi ,  Katsuzo Kaminishi

IPC分类号： H03K17/74 ,  H03K17/58

CPC分类号： H03K17/74

摘要： The high frequency semiconductor device of the present comprises a pair of diodes and a transfer switch. The anode electrodes of the diodes are connected together and the transfer switch operates to connect the cathode electrode of one diode to ground and the cathode electrode of the other diode to a voltage source so as to forwardly bias one diode and reversely bias the other diode. By the selective operation of the transfer switch, the device operates either as a switch for passing high frequency signals or as an attenuator for high frequency signals.

摘要翻译： 本发明的高频半导体器件包括一对二极管和转换开关。 二极管的阳极电极连接在一起，转换开关操作，将一个二极管的阴极电极与另一个二极管的阴极电极连接到一个电压源，以便向前偏置一个二极管并反向偏置另一个二极管。 通过转换开关的选择性操作，器件可以作为用于通过高频信号的开关或用作高频信号的衰减器。

公开(公告)号：US5600157A

公开(公告)日：1997-02-04

申请号：US654756

申请日：1996-05-29

申请人： Ichimatsu Abiko ,  Yukio Nakamura ,  Katsuzo Kaminishi ,  Takatoku Shimizu ,  Kazuo Tokura ,  Yasuo Iguti ,  Hiroshi Furuya ,  Mituhiko Ogihara ,  Masumi Taninaka ,  Mio Chiba

发明人： Ichimatsu Abiko ,  Yukio Nakamura ,  Katsuzo Kaminishi ,  Takatoku Shimizu ,  Kazuo Tokura ,  Yasuo Iguti ,  Hiroshi Furuya ,  Mituhiko Ogihara ,  Masumi Taninaka ,  Mio Chiba

IPC分类号： H01L31/0352 ,  H01L31/103 ,  H01L33/00 ,  H01L33/24 ,  H01L27/15 ,  H01L31/12 ,  H01L31/153

CPC分类号： H01L33/24 ,  H01L31/03529 ,  H01L31/1035 ,  H01L33/0008 ,  H01L2924/01015 ,  H01L2924/01031 ,  H01L2924/10329 ,  Y02E10/50

摘要： According to a first aspect of the invention, a light-emitting and light-sensing diode has a doped region with a depth not exceeding 2 .mu.m, for adequate sensitivity, and an impurity concentration of at least 5.times.10.sup.20 atoms/cm.sup.-3, for adequate emission. According to a second aspect of the invention, a light-emitting and light-sensing diode has a doped region with a deep part and a shallow part, and the area of the shallow part is increased to enhance the sensitivity of the diode. This may be done by providing the doped region with a meandering edge, or with one or more interior islands, or by forming the deep and shallow parts separately.

摘要翻译： 根据本发明的第一方面，发光和感光二极管具有深度不超过2μm的掺杂区域，以获得足够的灵敏度，并且杂质浓度至少为5×10 20原子/ cm -3，用于 充分排放 根据本发明的第二方面，发光和感光二极管具有具有深部分和浅部分的掺杂区域，并且浅部分的面积增加以增强二极管的灵敏度。 这可以通过为掺杂区域提供曲折边缘，或者与一个或多个内部岛屿，或通过分开形成深部和浅部来实现。

公开(公告)号：US4586063A

公开(公告)日：1986-04-29

申请号：US595873

申请日：1984-04-02

申请人： Hiroshi Nakamura ,  Katsuzo Kaminishi ,  Toshio Nonaka ,  Toshimasa Ishida

发明人： Hiroshi Nakamura ,  Katsuzo Kaminishi ,  Toshio Nonaka ,  Toshimasa Ishida

IPC分类号： H01L29/47 ,  H01L29/48 ,  H01L23/48 ,  H01L29/56 ,  H01L29/80

CPC分类号： H01L29/475

摘要： A semiconductor device and a method of manufacturing the same are disclosed. The device comprises a GaAs semiconductor body, a source and a drain region formed in the semiconductor body, a channel region placed between the source and drain regions, a source and a drain electrodes provided by patterning treatment onto the surfaces of the source and drain regions and making ohmic contact thereto, and a gate electrode provided onto the surface of the channel region and consisting of a W-Al alloy. The method comprises steps of providing a GaAs semiconductor body as a substrate, forming an active layer into the body, forming a pattern of a W-Al alloy as a gate electrode, implanting donor ion with high concentration into a region including a portion of the active layer other than the underlying region of the portion on which the gate electrode is at least provided thereby forming a source and a drain region, subjecting the semiconductor body to an annealing treatment to activate the active layer and the source and drain regions, and providing ohmic contacts onto the source and drain regions.

摘要翻译： 公开了一种半导体器件及其制造方法。 该器件包括GaAs半导体本体，形成在半导体本体中的源区和漏区，设置在源极和漏极区之间的沟道区，通过在源极和漏极区的表面上进行图案化处理而提供的源极和漏极 并与其形成欧姆接触，以及设置在沟道区域的表面上并由W-Al合金构成的栅电极。 该方法包括以下步骤：提供GaAs半导体本体作为衬底，在主体中形成有源层，形成作为栅电极的W-Al合金的图案，将供体离子高浓度地注入到包含部分 至少提供栅电极的部分的下面的区域之外的有源层，从而形成源极和漏极区域，对半导体体进行退火处理以激活有源层和源极和漏极区域，并提供 欧姆接触到源极和漏极区域。

公开(公告)号：US06368515B1

公开(公告)日：2002-04-09

申请号：US09494117

申请日：2000-01-27

申请人： Katsuzo Kaminishi ,  Junji Shiota ,  Ichiro Kohno ,  Kazuyoshi Arai

发明人： Katsuzo Kaminishi ,  Junji Shiota ,  Ichiro Kohno ,  Kazuyoshi Arai

IPC分类号： B41J216

CPC分类号： B41J2/1603 ,  B41J2/1607 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1635 ,  B41J2/1643

摘要： In a method of manufacturing an ink-jet printer which uses a thin film sheet having adhesive layers respectively formed on the top and bottom sides, as an orifice plate, orifices are formed in the ink-ejecting side of the thin film sheet after the adhesive layer on that ink-ejecting side has been removed. This prevents the formation of the orifices from being adversely affected by any otherwise residual of the adhesive layer and can thus permit accurate formation of orifices of a desired shape. Even if helicon-wave dry etching which ensure fast etching using high-power energy is used to form orifices, therefore, no adhesive layer is thermally expanded to be a residual so that multiple orifices can be formed simultaneously and quickly.

摘要翻译： 在制造喷墨打印机的方法中，其使用具有分别形成在顶侧和底侧上的粘合层的薄膜片作为孔板，在粘合剂之后在薄膜片的喷墨侧形成孔 墨水喷射面上的层被去除。 这防止孔的形成受到粘合剂层的任何其它残余物的不利影响，并且因此允许精确形成所需形状的孔。 即使使用确保使用高功率能量的快速蚀刻的螺旋波干法蚀刻来形成孔，因此，没有粘合剂层热膨胀成残留物，从而可以同时且快速地形成多个孔。