-
公开(公告)号：US20080142355A1
公开(公告)日：2008-06-19
申请号：US11610785
申请日：2006-12-14
CPC分类号： B01D3/326 , B01D3/328 , Y10T29/49826
摘要： The invention comprises a spacing element situated between a vapor-liquid contacting tray and a tray support to reduce the dead zone typically caused by the tray supports blocking of the perforations in the vapor-liquid contacting tray directly above the tray support.
摘要翻译： 本发明包括位于气液接触托盘和托盘支撑件之间的间隔元件，以减少通常由托盘支撑件阻塞直接在托盘支架上方的气液接触托盘中的穿孔的死区。
-
公开(公告)号：US07810796B2
公开(公告)日：2010-10-12
申请号：US11610785
申请日：2006-12-14
IPC分类号： B01F3/04
CPC分类号： B01D3/326 , B01D3/328 , Y10T29/49826
摘要： The invention involves a spacing element situated between a vapor-liquid contacting tray and a tray support to reduce the dead zone typically caused by the tray supports blocking of the perforations in the vapor-liquid contacting tray directly above the tray support.
摘要翻译： 本发明涉及一种间隔元件，其位于气液接触托盘和托盘支撑件之间，以减少通常由托盘支撑件阻塞直接在托盘支撑件上方的气液接触托盘中的穿孔而造成的死区。
-
公开(公告)号：US07370846B2
公开(公告)日：2008-05-13
申请号：US11550179
申请日：2006-10-17
IPC分类号： B01F3/04
摘要： The invention comprises multiple configurations of downcomers in a parallel flow multiple downcomer tray for vapor-liquid contacting processes such as the separation of chemical compounds via fractional distillation or the removal of a component of a gas stream with a treating liquid. In one embodiment, side downcomers are incorporated into a parallel flow multiple downcomer tray. In another embodiment, the downcomers have an inclined side wall that directs liquid onto the deck below the downcomer. The inclined side wall also provides additional volume above the inferior downcomer inlet to reduce pinching at this inlet without the need for a stilling deck.
摘要翻译： 本发明包括用于气 - 液接触方法的并行流多重降液管的多个构造的降液管，例如通过分馏分离化合物或用处理液除去气流的组分。 在一个实施例中，侧向下导管并入到并行流多个下降管托盘中。 在另一个实施例中，降液管具有将液体引导到降液管下方的甲板上的倾斜侧壁。 倾斜的侧壁还在下部降液管入口之上提供额外的体积，以减少在该入口处的挤压，而不需要静止甲板。
-
公开(公告)号：US07204477B2
公开(公告)日：2007-04-17
申请号：US11142804
申请日：2005-06-01
IPC分类号： B01F3/04
摘要： The invention comprises multiple configurations of downcomers in a parallel flow multiple downcomer tray for vapor-liquid contacting processes such as the separation of chemical compounds via fractional distillation or the removal of a component of a gas stream with a treating liquid. In one embodiment, side downcomers are incorporated into a parallel flow multiple downcomer tray. In another embodiment, the downcomers have an inclined side wall that directs liquid onto the deck below the downcomer. The inclined side wall also provides additional volume above the inferior downcomer inlet to reduce pinching at this inlet without the need for a stilling deck.
摘要翻译： 本发明包括用于气 - 液接触方法的并行流多重降液管的多个构造的降液管，例如通过分馏分离化合物或用处理液除去气流的组分。 在一个实施例中，侧向下导管并入到并行流多个下降管托盘中。 在另一个实施例中，降液管具有将液体引导到降液管下方的甲板上的倾斜侧壁。 倾斜的侧壁还在下部降液管入口之上提供额外的体积，以减少在该入口处的挤压，而不需要静止甲板。
-
公开(公告)号：US08760157B2
公开(公告)日：2014-06-24
申请号：US12561498
申请日：2009-09-17
IPC分类号： G01R33/02
摘要： A multiferroic antenna and sensor where the sensor includes a multiferroic stack of multiple connected multiferroic layer-pairs, each multiferroic layer-pair comprising an alternating layer of a magnetostrictive material and a piezoelectric material bonded together enabling a high signal sensitivity, a magnetic field of an incident signal causing mechanical strain in the magnetostrictive material layers that strains adjacent piezoelectric material layers producing an electrical voltage in each multiferroic layer-pair proportional to the incident signal. An output of the multiferroic stack comprises the electrical voltage amplified proportional to a total number of multiple connected multiferroic layer-pairs in the multiferroic stack.
摘要翻译： 一种多铁性天线和传感器，其中传感器包括多层连接的多铁层对的多层叠层，每个多层层对包括磁致伸缩材料的交替层和结合在一起的压电材料，能够实现高信号灵敏度， 入射信号引起磁致伸缩材料层中的机械应变，使得相邻的压电材料层产生与入射信号成比例的每个多铁层对中的电压。 多层堆叠的输出包括与多层堆叠中的多个连接的多铁层对的总数成比例放大的电压。
-
6.发明申请METHODS OF FORMING HIGH MOBILITY FIN CHANNELS ON THREE DIMENSIONAL SEMICONDUCTOR DEVICES 有权在三维半导体器件上形成高移动性融合通道的方法公开(公告)号：US20130330916A1
公开(公告)日：2013-12-12
申请号：US13493021
申请日：2012-06-11
申请人： Daniel T. Pham , Robert J. Miller , Kingsuk Maitra
发明人： Daniel T. Pham , Robert J. Miller , Kingsuk Maitra
IPC分类号： H01L21/205
CPC分类号： H01L29/1054 , H01L29/66795 , H01L29/785
摘要： Disclosed herein are various methods of forming high mobility fin channels on three dimensional semiconductor devices, such as, for example, FinFET semiconductor devices. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate, wherein the trenches define an original fin structure for the device, and wherein a portion of a mask layer is positioned above the original fin structure, forming a compressively-stressed material in the trenches and adjacent the portion of mask layer, after forming the compressively-stressed material, removing the portion of the mask layer to thereby expose an upper surface of the original fin structure, and forming a final fin structure above the exposed surface of the original fin structure.
摘要翻译： 本文公开了在三维半导体器件（例如FinFET半导体器件）上形成高迁移率鳍通道的各种方法。 在一个示例中，该方法包括在半导体衬底中形成多个间隔开的沟槽，其中沟槽限定用于器件的原始鳍状结构，并且其中掩模层的一部分位于原始鳍结构的上方，形成 在形成压缩应力材料之后，在沟槽中并与掩模层的部分相邻的压缩应力材料，去除掩模层的部分，从而暴露原始鳍状结构的上表面，并且在 裸露表面的原有翅片结构。
-
公开(公告)号：US08466034B2
公开(公告)日：2013-06-18
申请号：US12749220
申请日：2010-03-29
申请人： Witold Maszara , Robert J. Miller
发明人： Witold Maszara , Robert J. Miller
IPC分类号： H01L21/76
CPC分类号： H01L29/66545 , H01L29/66795
摘要： A method of manufacturing a finned semiconductor device structure is provided. The method begins by providing a substrate having bulk semiconductor material. The method continues by forming a semiconductor fin structure from the bulk semiconductor material, depositing an insulating material overlying the semiconductor fin structure such that the insulating material fills space adjacent to the semiconductor fin structure, and planarizing the deposited insulating material and the semiconductor fin structure to create a flat surface. Thereafter, a replacement gate procedure is performed to form a gate structure transversely overlying the semiconductor fin structure.
摘要翻译： 提供一种制造翅片半导体器件结构的方法。 该方法开始于提供具有体半导体材料的衬底。 该方法继续通过从体半导体材料形成半导体鳍结构，沉积覆盖半导体鳍结构的绝缘材料，使得绝缘材料填充与半导体鳍结构相邻的空间，并将沉积的绝缘材料和半导体鳍结构平坦化为 创建一个平坦的表面。 此后，执行替换门程序以形成横向覆盖半导体鳍结构的栅极结构。
-
8.发明授权Finned semiconductor device with oxygen diffusion barrier regions, and related fabrication methods 有权具有氧扩散阻挡区域的翅片半导体器件及相关制造方法公开(公告)号：US08354719B2
公开(公告)日：2013-01-15
申请号：US12708213
申请日：2010-02-18
申请人： Kisik Choi , Robert J. Miller
发明人： Kisik Choi , Robert J. Miller
IPC分类号： H01L27/12
CPC分类号： H01L29/66795 , H01L21/76229 , H01L29/66545 , H01L29/785
摘要： A semiconductor device and related fabrication methods are provided. One exemplary fabrication method forms a fin arrangement overlying an oxide layer, where the fin arrangement includes one or more semiconductor fin structures. The method continues by nitriding exposed portions of the oxide layer without nitriding the one or more semiconductor fin structures, resulting in nitrided portions of the oxide layer. Thereafter, a gate structure is formed transversely overlying the fin arrangement, and overlying the exposed portions of the oxide layer. The nitrided portions of the oxide layer substantially inhibit diffusion of oxygen from the oxide layer into the gate structure.
摘要翻译： 提供半导体器件及相关的制造方法。 一种示例性的制造方法形成覆盖氧化物层的翅片布置，其中翅片布置包括一个或多个半导体翅片结构。 该方法通过氮化氧化物层的暴露部分而不渗透一个或多个半导体鳍结构，导致氧化物层的氮化部分继续。 此后，栅极结构横向地形成在翅片布置上，并且覆盖在氧化物层的暴露部分上。 氧化物层的氮化部分基本上抑制氧从氧化物层扩散到栅极结构中。
-
9.发明申请Method of Manufacturing a Transmission Clutch Assembly with Reduced Squawk 审中-公开制造具有减少眩光的传动离合器组件的方法公开(公告)号：US20120111693A1
公开(公告)日：2012-05-10
申请号：US13351447
申请日：2012-01-17
申请人： Jim Chern , Carl Garbacik , Robert J. Miller , Jau-Wen Tseng
发明人： Jim Chern , Carl Garbacik , Robert J. Miller , Jau-Wen Tseng
CPC分类号： F16D65/0006 , F16D13/683 , F16D25/0638 , F16D65/0018 , F16D65/092 , F16D65/12 , F16D2300/22 , F16F15/1336 , F16F15/1421 , Y10T29/49826
摘要： The present disclosure relates to a method of manufacturing a transmission clutch assembly configured to reduce squawk during engagement, the method including: forming a clutch component; and coupling a plurality of mass dampers to the clutch component to split a mode of vibration for the clutch component during engagement.
摘要翻译： 本公开涉及一种制造传动离合器组件的方法，所述变速器离合器组件被构造成在接合期间减少冲击，所述方法包括：形成离合器部件; 以及将多个质量阻尼器联接到离合器部件，以在接合期间分离离合器部件的振动模式。
-
公开(公告)号：US20120031567A1
公开(公告)日：2012-02-09
申请号：US13274952
申请日：2011-10-17
CPC分类号： E06B9/68 , E05F15/668 , E05F15/70 , E05Y2400/44 , E05Y2400/512 , E05Y2400/612 , E05Y2400/66 , E05Y2600/46 , E05Y2900/00 , E05Y2900/106
摘要： A door system includes a support connected to a structure, and a door mounted on the support and movable relative to the support between an opened position and a closed position. The door includes a detection device and a remote module coupled to the detection device. The remote module includes a battery and an RF module for supporting two-way communication and sending signals indicative of the status of the detection device and the battery. The door system also includes a motor to drive the door, and a controller to control the motor. The controller includes a user interface and a memory. The door system also includes a base module coupled to the controller for receiving signals from the remote module. The received signals are indicative of the status of the detection device and the battery. The base module also sends signals related to successful transmission acknowledgements to the remote module.
摘要翻译： 门系统包括连接到结构的支撑件和安装在支撑件上并可相对于支撑件在打开位置和关闭位置之间移动的门。 门包括检测装置和耦合到检测装置的远程模块。 远程模块包括电池和用于支持双向通信并发送指示检测装置和电池的状态的信号的RF模块。 门系统还包括驱动门的马达和控制器来控制马达。 控制器包括用户界面和存储器。 门系统还包括耦合到控制器的基本模块，用于从远程模块接收信号。 所接收的信号表示检测装置和电池的状态。 基本模块还向远程模块发送与成功发送确认有关的信号。
-
-
-
-
-
-
-
-
-
搜索结果
159 条记录 (耗时 0.027 秒)
