Device including quantum dots and method for making same
    2.
    发明授权
    Device including quantum dots and method for making same 有权
    包括量子点的装置及其制造方法

    公开(公告)号:US09520573B2

    公开(公告)日:2016-12-13

    申请号:US13422683

    申请日:2012-03-16

    摘要: A device comprises an anode; a cathode; a layer therebetween comprising quantum dots; and a first layer comprising a material capable of transporting and injecting electrons in, or forming, contact with the cathode, the material comprising nanoparticles of an inorganic semiconductor material. In one embodiment of the device, quantum dots comprise a core comprising a first semiconductor material that confines holes better than electrons in the core and an outer shell comprising a second semiconductor material that is permeable to electrons. In another embodiment of the device, the nanoparticles comprise n-doped inorganic semiconductor material, and a second layer comprising a material capable of transporting electrons is disposed between the layer including quantum dots and the first layer, wherein the second layer has a lower electron conductivity than the first. In a further embodiment of the device, the first layer is UV treated. A method and other embodiments are also disclosed.

    摘要翻译: 一种装置包括阳极; 阴极 其间包括量子点的层; 以及第一层,其包括能够传输和注入电子或与阴极形成接触的材料,所述材料包含无机半导体材料的纳米颗粒。 在该器件的一个实施例中,量子点包括一个芯,该芯包含一个第一半导体材料,该第一半导体材料限制了比芯中的电子更好的孔,以及一个外壳,其包含一个可渗透电子的第二半导体材料。 在该器件的另一实施例中,纳米颗粒包括n掺杂的无机半导体材料,并且包括能够传输电子的材料的第二层设置在包括量子点和第一层的层之间,其中第二层具有较低的电子传导性 比第一个。 在装置的另一实施例中,第一层被UV处理。 还公开了一种方法和其他实施例。