利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

8 条记录 (耗时 0.025 秒)

    Methods in electroanalytical techniques to analyze organic components in plating baths
    1.
    发明授权
    Methods in electroanalytical techniques to analyze organic components in plating baths 有权

    公开(公告)号：US06808611B2

    公开(公告)日：2004-10-26

    申请号：US10187734

    申请日：2002-06-27

    申请人： Zhi-wen Sun ,  Chunman Yu ,  Brian Metzger ,  David W. Nguyen ,  Girish Dixit

    发明人： Zhi-wen Sun ,  Chunman Yu ,  Brian Metzger ,  David W. Nguyen ,  Girish Dixit

    IPC分类号： C25D2100

    CPC分类号： C25D21/12 ,  G01N27/42 ,  G01N27/49 ,  G01N31/164

    摘要： Embodiments of the invention provide an electro-analytical method for determining the concentration of an organic additive in an acidic or basic metal plating bath using an organic chemical analyzer. The method includes preparing a supporting-electrolyte solution, preparing a testing solution including the supporting-electrolyte solution and a standard solution, measuring an electrochemical response of the supporting-electrolyte solution using the organic chemical analyzer, and implementing an electro-analytical technique to determine the concentration of the organic additive in the plating bath from the electrochemical response measurements. The method is performed for independently analyzing one organic additive component in a plating bath containing multi-component organic additives, regardless of knowledge of the concentration of other organic additives and with minimal interference among organic additives.

    Methods for forming resistive switching memory elements
    3.
    发明授权
    Methods for forming resistive switching memory elements 有权
    形成电阻式开关存储元件的方法

    公开(公告)号：US07704789B2

    公开(公告)日：2010-04-27

    申请号：US11702967

    申请日：2007-02-05

    申请人： Zhi-wen Sun ,  Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang

    发明人： Zhi-wen Sun ,  Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang

    IPC分类号： H01L21/00

    CPC分类号： H01L45/04 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633

    摘要： Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

    摘要翻译： 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

    Methods for forming resistive switching memory elements
    6.
    发明申请
    Methods for forming resistive switching memory elements 有权
    形成电阻式开关存储元件的方法

    公开(公告)号：US20080185567A1

    公开(公告)日：2008-08-07

    申请号：US11702966

    申请日：2007-02-05

    申请人： Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-wen Sun ,  Jihhong Tong

    发明人： Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-wen Sun ,  Jihhong Tong

    IPC分类号： H01L47/00 ,  H01L21/00

    CPC分类号： H01L45/145 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

    摘要： Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

    摘要翻译： 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

    METHODS FOR FORMING RESISTIVE SWITCHING MEMORY ELEMENTS
    7.
    发明申请
    METHODS FOR FORMING RESISTIVE SWITCHING MEMORY ELEMENTS 有权
    形成电阻式开关记忆元件的方法

    公开(公告)号：US20110201149A1

    公开(公告)日：2011-08-18

    申请号：US13096719

    申请日：2011-04-28

    申请人： Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-wen Sun ,  Jinhong Tong

    发明人： Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-wen Sun ,  Jinhong Tong

    IPC分类号： H01L21/8239

    CPC分类号： H01L45/145 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

    摘要： Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

    摘要翻译： 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

    Methods for forming resistive switching memory elements
    8.
    发明授权
    Methods for forming resistive switching memory elements 有权
    形成电阻式开关存储元件的方法

    公开(公告)号：US07972897B2

    公开(公告)日：2011-07-05

    申请号：US11702966

    申请日：2007-02-05

    申请人： Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-wen Sun ,  Jinhong Tong

    发明人： Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-wen Sun ,  Jinhong Tong

    IPC分类号： H01L21/00

    CPC分类号： H01L45/145 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

    摘要： Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

    摘要翻译： 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。