公开(公告)号：US20050199869A1

公开(公告)日：2005-09-15

申请号：US11051826

申请日：2005-02-04

申请人： Zhisheng Shi

发明人： Zhisheng Shi

IPC分类号： H01L29/00 ,  H01L47/00 ,  H01S5/32

CPC分类号： H01S5/3222 ,  H01L31/0324

摘要： A method of growing and fabricating a group IV-VI semiconductor structure, for use in fabricating devices. In one embodiment, the group IV-VI semiconductor structure produced by the method of the present invention includes a group IV-VI material grown on a selected orientation of [110]. The devices fabricated can be a laser, detector, solar cell, thermal electrical cooling devices, etc. A laser device produced according to the present method will have a low threshold due to the lift-off of the energy degeneracy and low defect density. Growth on the [110] orientation also allows epitaxial growth of the semiconductor structure on a dissimilar substrate, which could improve the thermal dissipation and thus increase the operating temperature of the laser device.

摘要翻译： 一种用于制造器件的生长和制造IV-VI族半导体结构的方法。 在一个实施方案中，通过本发明的方法制备的IV-VI族半导体结构包括在[110]的选定取向上生长的IV-VI族材料。 制造的器件可以是激光，检测器，太阳能电池，热电冷却器件等。由于能量简并性的降低和低缺陷密度，根据本方法制造的激光器件将具有低阈值。 在[110]取向上的生长也允许半导体结构在不同的衬底上外延生长，这可以改善热耗散并因此增加激光器件的工作温度。

公开(公告)号：US20120326210A1

公开(公告)日：2012-12-27

申请号：US13168290

申请日：2011-06-24

申请人： Zhisheng Shi

发明人： Zhisheng Shi

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/02639 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02568 ,  H01L29/16 ,  H01L29/245 ,  H01L29/32

摘要： A crystalline structure comprising a substrate, which has a surface. The surface has one or more wells formed therein defining one or more growing area and at least one layer of dissimilar crystalline material epitaxially grown on the growing area. A method of making a crystalline structure having a low threading dislocation density comprising the steps of (a) patterning a surface of a substrate material such that one or more wells defining a growing area is formed therein; and (b) epitaxially growing at least one strained layer of dissimilar crystalline material on the growing area of the surface of the substrate material, such that the threading dislocation density of the at least one strained layer is reduced by the one or more wells.

摘要翻译： 包括具有表面的基底的晶体结构。 表面具有形成在其中的一个或多个阱限定一个或多个生长区域和在生长区域外延生长的至少一层不同的晶体材料层。 一种制造具有低穿透位错密度的晶体结构的方法，包括以下步骤：（a）使衬底材料的表面图案化，使得在其中形成限定生长区域的一个或多个阱; 和（b）在衬底材料的表面的生长区域上外延生长不同结晶材料的至少一个应变层，使得至少一个应变层的穿透位错密度由一个或多个孔减小。

公开(公告)号：US07400663B2

公开(公告)日：2008-07-15

申请号：US11051826

申请日：2005-02-04

申请人： Zhisheng Shi

发明人： Zhisheng Shi

IPC分类号： H01S5/00

CPC分类号： H01S5/3222 ,  H01L31/0324

摘要： A method of growing and fabricating a group IV-VI semiconductor structure, for use in fabricating devices. In one embodiment, the group IV-VI semiconductor structure produced by the method of the present invention includes a group IV-VI material grown on a selected orientation of [110]. The devices fabricated can be a laser, detector, solar cell, thermal electrical cooling devices, etc. A laser device produced according to the present method will have a low threshold due to the lift-off of the energy degeneracy and low defect density. Growth on the [110] orientation also allows epitaxial growth of the semiconductor structure on a dissimilar substrate, which could improve the thermal dissipation and thus increase the operating temperature of the laser device.

摘要翻译： 一种用于制造器件的生长和制造IV-VI族半导体结构的方法。 在一个实施方案中，通过本发明的方法制备的IV-VI族半导体结构包括在[110]的选定取向上生长的IV-VI族材料。 制造的器件可以是激光，检测器，太阳能电池，热电冷却器件等。由于能量简并性的降低和低缺陷密度，根据本方法制造的激光器件将具有低阈值。 在[110]取向上的生长也允许半导体结构在不同的衬底上外延生长，这可以改善热耗散并因此增加激光器件的工作温度。