公开(公告)号：US20250149856A1

公开(公告)日：2025-05-08

申请号：US18836990

申请日：2022-12-13

Applicant: ams-OSRAM INTERNATIONAL GmbH

Inventor： Hubert HALBRITTER ,  Adrian Stefan AVRAMESCU ,  Christoph EICHLER

IPC: H01S5/11

Abstract: The invention relates to an optoelectronic semiconductor laser component. The optoelectronic semiconductor laser component includes an epitaxial semiconductor layer sequence having an active region which is designed to generate first electromagnetic radiation in a first wavelength range. The optoelectronic semiconductor laser component further includes a photonic semiconductor layer which forms a two-dimensional photonic crystal and is designed to form a resonator for the first electromagnetic radiation, and a conversion element which is designed to convert the first electromagnetic radiation into second electromagnetic radiation in a second wavelength range. The emission direction is oriented transversely to the main plane of extent of the epitaxial semiconductor layer sequence. The first electromagnetic radiation exits from the photonic semiconductor layer in the emission direction. The first wavelength range is in the blue or ultraviolet spectral range. The invention also relates to an optoelectronic arrangement.

公开(公告)号：US20250047066A1

公开(公告)日：2025-02-06

申请号：US18707226

申请日：2022-11-02

Applicant: ams-OSRAM International GmbH

Inventor： Hubert HALBRITTER ,  Bruno JENTZSCH ,  Adrian Stefan AVRAMESCU ,  Laura KREINER ,  Lutz HÖPPEL ,  Christoph EICHLER

IPC: H01S5/11 ,  H01S5/183 ,  H01S5/343

Abstract: A surface emitting semiconductor laser is disclosed that includes a semiconductor layer sequence having an active layer for generating laser radiation, a carrier substrate on one side of the semiconductor layer sequence, and an optical structure for influencing at least one degree of freedom of the laser radiation. The carrier substrate is different from a growth substrate of the semiconductor layer sequence and the growth substrate is at least partly removed. The optical structure has a varying refractive index in a lateral direction for the laser radiation.

公开(公告)号：US20240266802A1

公开(公告)日：2024-08-08

申请号：US18563177

申请日：2022-05-18

Applicant: ams-OSRAM International GmbH

Inventor： Hubert HALBRITTER ,  Adrian Stefan AVRAMESCU ,  Laura KREINER ,  Bruno JENTZSCH ,  Alvaro GOMEZ-IGLESIAS

IPC: H01S5/11 ,  H01S5/185 ,  H01S5/34 ,  H01S5/343

CPC classification number: H01S5/11 ,  H01S5/185 ,  H01S5/3416 ,  H01S5/343

Abstract: An optoelectronic component includes a stacked arrangement including a photonic crystal and a gain medium. The gain medium includes a layer sequence composed of two quantum wells and at least one tunnel diode and is set up to emit an electromagnetic wave. The photonic crystal is electromagnetically coupled to the gain medium. The stacked arrangement is disposed on a substrate. Alternatively or additionally, the gain medium includes at least one quantum well. The photonic crystal is structured in a dielectric layer and electromagnetically coupled to the gain medium.