公开(公告)号：US20250149856A1

公开(公告)日：2025-05-08

申请号：US18836990

申请日：2022-12-13

Applicant: ams-OSRAM INTERNATIONAL GmbH

Inventor： Hubert HALBRITTER ,  Adrian Stefan AVRAMESCU ,  Christoph EICHLER

IPC: H01S5/11

Abstract: The invention relates to an optoelectronic semiconductor laser component. The optoelectronic semiconductor laser component includes an epitaxial semiconductor layer sequence having an active region which is designed to generate first electromagnetic radiation in a first wavelength range. The optoelectronic semiconductor laser component further includes a photonic semiconductor layer which forms a two-dimensional photonic crystal and is designed to form a resonator for the first electromagnetic radiation, and a conversion element which is designed to convert the first electromagnetic radiation into second electromagnetic radiation in a second wavelength range. The emission direction is oriented transversely to the main plane of extent of the epitaxial semiconductor layer sequence. The first electromagnetic radiation exits from the photonic semiconductor layer in the emission direction. The first wavelength range is in the blue or ultraviolet spectral range. The invention also relates to an optoelectronic arrangement.

公开(公告)号：US20250007237A1

公开(公告)日：2025-01-02

申请号：US18708730

申请日：2022-11-04

Applicant: ams-OSRAM International GmbH

Inventor： Alfred LELL ,  Christoph EICHLER ,  Sven GERHARD

IPC: H01S5/02255 ,  H01S5/22 ,  H01S5/40

Abstract: The invention relates to a component including a semiconductor body and at least one converter layer, wherein the semiconductor body includes at least one active region having an active zone, the active zone being designed to produce electromagnetic radiation. The semiconductor body has at least one vertical recess. A side wall of the recess is formed by a vertically extending facet of the active region, said facet being a radiation passage surface of the active region. The converter layer covers the recess in a top view or at least partly fills the recess. The invention also relates to a method for producing a component.

公开(公告)号：US20250047066A1

公开(公告)日：2025-02-06

申请号：US18707226

申请日：2022-11-02

Applicant: ams-OSRAM International GmbH

Inventor： Hubert HALBRITTER ,  Bruno JENTZSCH ,  Adrian Stefan AVRAMESCU ,  Laura KREINER ,  Lutz HÖPPEL ,  Christoph EICHLER

IPC: H01S5/11 ,  H01S5/183 ,  H01S5/343

Abstract: A surface emitting semiconductor laser is disclosed that includes a semiconductor layer sequence having an active layer for generating laser radiation, a carrier substrate on one side of the semiconductor layer sequence, and an optical structure for influencing at least one degree of freedom of the laser radiation. The carrier substrate is different from a growth substrate of the semiconductor layer sequence and the growth substrate is at least partly removed. The optical structure has a varying refractive index in a lateral direction for the laser radiation.

公开(公告)号：US20240405511A1

公开(公告)日：2024-12-05

申请号：US18695769

申请日：2022-09-06

Applicant: ams-OSRAM International GmbH

Inventor： Sven GERHARD ,  Alfred LELL ,  Christoph EICHLER

IPC: H01S5/10 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40

Abstract: The invention relates to an edge-emitting semiconductor laser diode, including the following features: an epitaxial semiconductor layer stack including an active one, in which during operation electromagnetic radiation is generated, wherein the epitaxial semiconductor layer stack has at least one facet which laterally delimits the epitaxial semiconductor layer stack, and the facet has at least one first partial surface and at least one second partial surface which have reflectivities differing from one another for the electromagnetic radiation generated in the active zone. The invention also relates to methods for producing a plurality of edge-emitting semiconductor laser diodes.

公开(公告)号：US20240372331A1

公开(公告)日：2024-11-07

申请号：US18686032

申请日：2022-08-26

Applicant: ams-OSRAM International GMBH

Inventor： Alfred LELL ,  Sven GERHARD ,  Christoph EICHLER

IPC: H01S5/20

Abstract: A method for producing at least one laser chip is specified, the method including the steps of growing a semiconductor layer sequence having an active zone on a substrate, removing part of the substrate, part of the active zone and part of the semiconductor layer sequence by dry-chemical etching, thereby forming at least one side edge extending, at least in places, transversely or perpendicularly to the main plane of extent of the substrate, and removing part of the substrate, part of the active zone and part of the semiconductor layer sequence at the side edge by wet-chemical etching, the active zone being designed to emit laser radiation. A laser chip is additionally specified.

公开(公告)号：US20250096518A1

公开(公告)日：2025-03-20

申请号：US18294469

申请日：2022-07-07

Applicant: ams-OSRAM International GmbH

Inventor： Christoph EICHLER ,  Alfred LELL ,  Sven GERHARD

IPC: H01S5/02 ,  H01S5/028 ,  H01S5/10 ,  H01S5/323

Abstract: In at least one embodiment, the semiconductor laser includes a semiconductor layer sequence for generating laser radiation and a transparent substrate. The semiconductor layer sequence has a first facet which is designed for emitting the laser radiation, and a second facet opposite the first facet. The substrate has a first lateral surface on the first facet and a second lateral surface on the second facet. The first lateral surface is orientated at least in part obliquely to the first facet and/or the second lateral surface is orientated at least in part obliquely to the second facet.

公开(公告)号：US20230197893A1

公开(公告)日：2023-06-22

申请号：US17924288

申请日：2021-05-10

Applicant: ams-OSRAM International GmbH

Inventor： Christoph EICHLER ,  Lars NÄHLE ,  Sven GERHARD

IPC: H01L33/10 ,  H01L33/00 ,  H01L33/62 ,  H01L25/075 ,  H01S5/00 ,  H01S5/02 ,  H01S5/40

CPC classification number: H01L33/10 ,  H01L33/005 ,  H01L33/62 ,  H01L25/0753 ,  H01S5/0071 ,  H01S5/0203 ,  H01S5/40 ,  H01L2933/0058

Abstract: The invention relates to a radiation-emitting semiconductor chip, having: a semiconductor body comprising an active region which is designed to generate electromagnetic radiation; a resonator which comprises a first end region and a second end region; and at least one cut-out in the semiconductor body, said cut-out passing completely through the active region, wherein: the active region is situated in the resonator, and the cut-out defines a reflectivity for the electromagnetic radiation. The invention also relates to a radiation-emitting semiconductor component, a method for producing a radiation-emitting semiconductor chip, and a method for producing radiation-emitting semiconductor components.