公开(公告)号：US20240235164A9

公开(公告)日：2024-07-11

申请号：US18546593

申请日：2022-01-27

Applicant: ams-OSRAM International GMBH

Inventor： Bruno Jentzsch ,  Hubert Halbritter ,  Alexander Behres ,  Alvaro Gomez-lglesias ,  Christian Lauer ,  Simon Baumann

IPC: H01S5/343 ,  H01S5/20 ,  H01S5/30

CPC classification number: H01S5/343 ,  H01S5/2031 ,  H01S5/3013 ,  H01S5/3095

Abstract: In an embodiment a semiconductor emitter includes a semiconductor layer sequence having a plurality of active zones, each active zone including at least one quantum well layer and at least two barrier layers between which the at least one quantum well layer is embedded, and at least one tunnel diode located along a growth direction of the semiconductor layer sequence between adjacent active zones, wherein a thickness of the at least one tunnel diode is at most 40 nm, and wherein a distance between adjacent barrier layers of adjacent active zones, facing the at least one tunnel diode, is at most 50 nm.

公开(公告)号：US20240022044A1

公开(公告)日：2024-01-18

申请号：US18253256

申请日：2021-11-19

Applicant: ams-OSRAM International GmbH

Inventor： Hubert Halbritter ,  Bruno Jentzsch ,  Christian Lauer ,  Peter Fuchs

IPC: H01S5/10 ,  H01S5/02255 ,  H01S5/028

CPC classification number: H01S5/1021 ,  H01S5/02255 ,  H01S5/1092 ,  H01S5/0287

Abstract: In an embodiment a semiconductor laser includes a semiconductor body having a plurality of resonator regions, wherein the resonator regions are arranged side by side along a lateral direction, each resonator region having an active region configured to generate radiation, wherein the semiconductor body extends between two side faces, wherein the resonator regions are configured to emit laser radiation at one of the two side faces, and a layer sequence attached to at least one of the side faces, wherein the layer sequence forms at least part of a resonator mirror for at least one resonator region.

公开(公告)号：US20230420919A1

公开(公告)日：2023-12-28

申请号：US18253185

申请日：2020-12-03

Applicant: ams-OSRAM International GmbH

Inventor： Christian Lauer ,  Martin Mueller ,  Michael Furitsch ,  Harald König

IPC: H01S5/20 ,  H01S5/34

CPC classification number: H01S5/2031 ,  H01S5/3404 ,  H01S2301/14

Abstract: In an embodiment a radiation-emitting laser diode includes a waveguide layer sequence having an active region configured to generate electromagnetic radiation with a preferred polarization direction, a first waveguide layer of a first doping type and a second waveguide layer of a second doping type, wherein the active region is arranged between the first waveguide layer and the second waveguide layer, wherein refractive indices of the waveguide layer sequence form a first effective refractive index for a transverse electric (TE) mode with its electric field oscillating in a first transverse direction and a second effective refractive index for a transverse magnetic (TM) mode with its electric field oscillating in a second transverse direction, and wherein an effective refractive index difference of the first effective refractive index and the second effective refractive index is at least 4·10−4.

公开(公告)号：US20230369827A1

公开(公告)日：2023-11-16

申请号：US18245071

申请日：2021-09-03

Applicant: ams-OSRAM International GmbH

Inventor： Alexander Behres ,  Christian Lauer ,  Martin Hetzl

IPC: H01S5/22

CPC classification number: H01S5/2215

Abstract: An optoelectronic semiconductor component is specified, including at least one layer stack having - an active zone for generating electromagnetic radiation, - at least one aluminum-containing current constriction layer including a first region and a second region, the second region having a lower electrical conductivity than the first region, and - a side surface which laterally delimits the layer stack and at which the second region is arranged, the second region being an oxidized region. A method for producing an optoelectronic semiconductor component is furthermore specified.

公开(公告)号：US20240136800A1

公开(公告)日：2024-04-25

申请号：US18546593

申请日：2022-01-27

Applicant: ams-OSRAM International GMBH

Inventor： Bruno Jentzsch ,  Hubert Halbritter ,  Alexander Behres ,  Alvaro Gomez-lglesias ,  Christian Lauer ,  Simon Baumann

IPC: H01S5/343 ,  H01S5/20 ,  H01S5/30

CPC classification number: H01S5/343 ,  H01S5/2031 ,  H01S5/3013 ,  H01S5/3095

Abstract: In an embodiment a semiconductor emitter includes a semiconductor layer sequence having a plurality of active zones, each active zone including at least one quantum well layer and at least two barrier layers between which the at least one quantum well layer is embedded, and at least one tunnel diode located along a growth direction of the semiconductor layer sequence between adjacent active zones, wherein a thickness of the at least one tunnel diode is at most 40 nm, and wherein a distance between adjacent barrier layers of adjacent active zones, facing the at least one tunnel diode, is at most 50 nm.