公开(公告)号：US11851597B2

公开(公告)日：2023-12-26

申请号：US17241086

申请日：2021-04-27

Applicant: eChem Solutions Corp.

Inventor： Yu-Ning Chen ,  Ming-Che Chung

IPC: C09K13/02 ,  C08J7/12

CPC classification number: C09K13/02 ,  C08J7/12

Abstract: An etchant composition, a tackifier, an alkaline solution, a method of removing polyimide and an etching process are provided. The etchant composition includes a tackifier (A) and an alkaline solution (B). The tackifier (A) includes a resin containing a hydroxyl group (a), a surfactant (b) and a first solvent (c1). The alkaline solution (B) includes an alkaline compound (d) and a second solvent (c2).

公开(公告)号：US20210371747A1

公开(公告)日：2021-12-02

申请号：US17241086

申请日：2021-04-27

Applicant: eChem Solutions Corp.

Inventor： Yu-Ning Chen ,  Ming-Che Chung

IPC: C09K13/02 ,  C08J7/12

Abstract: An etchant composition, a tackifier, an alkaline solution, a method of removing polyimide and an etching process are provided. The etchant composition includes a tackifier (A) and an alkaline solution (B). The tackifier (A) includes a resin containing a hydroxyl group (a), a surfactant (b) and a first solvent (c1). The alkaline solution (B) includes an alkaline compound (d) and a second solvent (c2).

公开(公告)号：US11609496B2

公开(公告)日：2023-03-21

申请号：US16909936

申请日：2020-06-23

Applicant: ECHEM SOLUTIONS CORP.

Inventor： Ting-Wei Chang ,  Ming-Che Chung

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/42 ,  G03F7/32 ,  G03F7/38

Abstract: The present invention provides a method for forming a patterned polyimide layer with the use of a positive photoresist composition. The composition comprises a cresol-type novolac resin, a diazonaphthoquinone-based sensitizer and an organic solvent; based on the cresol-type novolac resin with a total amount of 100 parts by weight, the amount of the diazonaphthoquinone-based sensitizer ranges from 40 parts to 60 parts by weight, the amount of the free cresol in the cresol-type novolac resin is lower than 2 parts by weight, and the alkaline dissolution rate (ADR) of the cresol-type novolac resin in an aqueous solution of 3.5 wt % to 7 wt % tetramethylammonium hydroxide is lower than 285 Å/s. The positive photoresist composition has excellent chemical resistance to the polyimide stripper, and can specifically improve the protective ability of the photoresist layer to the low-dielectric polyimide layer, thereby optimizing the manufacturing process and quality of the patterned polyimide layer.

公开(公告)号：US20210223699A1

公开(公告)日：2021-07-22

申请号：US17141228

申请日：2021-01-05

Applicant: eChem Solutions Corp.

Inventor： Tz-Jin Yang ,  Yung-Yu Lin ,  Chi-Yu Lai ,  Ming-Che Chung ,  Che-Wei Chang

IPC: G03F7/34 ,  G03F7/037 ,  G03F7/038 ,  G03F7/00 ,  C08G73/10 ,  G03F7/42

Abstract: A method of removing a photoresist, a laminate, a method of forming a metallic pattern, a polyimide resin, and a stripper are provided. The method of removing the photoresist includes forming a release layer on a substrate, the release layer having a first surface and a second surface opposite to each other, wherein the first surface of the release layer is in contact with the substrate; forming a photoresist layer on the second surface of the release layer; and removing the release layer and the photoresist layer. The release layer is formed by a polyimide resin. The polyimide resin is obtained by performing a polymerization of tetracarboxylic dianhydrides, diamines, and phenolamines. The diamines include hydroxyfluorinated diamines, benzoic acid diamines, and aminotetramethyldisiloxanes.