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公开(公告)号：US20220407512A1
公开(公告)日：2022-12-22
申请号：US17351128
申请日：2021-06-17
Applicant: pSemi Corporation
Inventor： David KOVAC , Joseph GOLAT
IPC: H03K17/687 , H01L23/66 , H03K19/003
Abstract: Methods and devices used to cancel non-linear capacitances in high power radio frequency (RF) switches manufactured in bulk complementary metal-oxide-semiconductor (CMOS) processes are disclosed. The methods and devices are also applicable to stacked switches and RF switches fabricated in silicon-on-insulator (SOI) technology.
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公开(公告)号：US20240113664A1
公开(公告)日：2024-04-04
申请号：US18458368
申请日：2023-08-30
Applicant: pSemi Corporation
Inventor： David KOVAC , Joseph GOLAT
CPC classification number: H03F1/223 , H03F1/565 , H03F3/195 , H03F3/72 , H03F2200/294 , H03F2200/381 , H03F2200/451
Abstract: Methods and apparatuses for controlling gain of a single stage cascode FET amplifier are presented. According to one aspect, a series-connected resistor and capacitor is coupled to a gate of a cascode FET transistor of the amplifier, the capacitor providing a short at frequencies of operation of the amplifier. According to another aspect, values of the resistor can be used to control gain of the amplifier. According to yet another aspect, the resistor is a variable resistor whose value can be controlled/adjusted to provide different gains of the amplifier according to a linear function of the resistor value. An input matching network coupled to an input of the amplifier can be used to compensate for different noise figure degradations from different values of the resistor.
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公开(公告)号：US20210083631A1
公开(公告)日：2021-03-18
申请号：US16743638
申请日：2020-01-15
Applicant: pSemi Corporation
Inventor： Parvez DARUWALLA , David KOVAC
Abstract: Various methods and circuital arrangements for protection of an RF amplifier are presented. According to one aspect, the RF amplifier is part of switchable RF paths that may include at least one path with one or more attenuators or switches that can be used during normal operation to define different modes of operation of the at least one path. An RF level detector monitors a level of an RF signal during operation of any one of the switchable RF paths and may control the attenuators or switches to provide an attenuation of the RF signal according to a desired level of protection at an input and/or output of the RF amplifier. According to another aspect, the RF level detector may control a switch to force the RF signal through a different switchable RF path.
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公开(公告)号：US20250105996A1
公开(公告)日：2025-03-27
申请号：US18942137
申请日：2024-11-08
Applicant: pSemi Corporation
Inventor： Joseph GOLAT , David KOVAC
Abstract: Methods and devices for reducing coupling of RF frequency components between different bands of an RF system are presented. According to one aspect, a notch filter having a notch centered at a harmonic of a fundamental frequency of a first band transmit side is coupled to an output of an LNA of the first band. According to another aspect, the harmonic is a second harmonic, a third harmonic or higher order harmonics. According to another aspect, the notch filter includes a plurality of notches at respective plurality of harmonics. According to a further aspect, the notch has an attenuation of 30 dB or greater at the second harmonic and 10 dB or greater at the third harmonic. Further included is a method for reducing coupling of harmonics of signals transmitted in the first band into a receive path of the second band, thereby increasing noise figure/sensitivity performances of the receive path.
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公开(公告)号：US20230269061A1
公开(公告)日：2023-08-24
申请号：US17675331
申请日：2022-02-18
Applicant: pSemi Corporation
Inventor： Joseph GOLAT , David KOVAC
CPC classification number: H04L5/1461 , H04B1/0064 , H04B1/0067
Abstract: Methods and devices for reducing coupling of RF frequency components between different bands of an RF system are presented. According to one aspect, a notch filter having a notch centered at a harmonic of a fundamental frequency of a first band transmit side is coupled to an output of an LNA of the first band. According to another aspect, the harmonic is a second harmonic, a third harmonic or higher order harmonics. According to another aspect, the notch filter includes a plurality of notches at respective plurality of harmonics. According to a further aspect, the notch has an attenuation of 30 dB or greater at the second harmonic and 10 dB or greater at the third harmonic. Further included is a method for reducing coupling of harmonics of signals transmitted in the first band into a receive path of the second band, thereby increasing noise figure/sensitivity performances of the receive path.
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Patent Agency Ranking
公开(公告)号：US20220278682A1
公开(公告)日：2022-09-01
申请号：US17698998
申请日：2022-03-18
Applicant: pSemi Corporation
Inventor： David KOVAC , Joseph GOLAT
IPC: H03K17/693
Abstract: RF transistors manufactured using a bulk CMOS process exhibit non-linear drain-body and source-body capacitances which degrade the linearity performance of the RF circuits implementing such transistors. The disclosed methods and devices address this issue and provide solutions based on implementing two or more bias voltages in accordance with the states of the transistors. Various exemplary RF circuits benefiting from the described methods and devices are also presented.
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公开(公告)号：US20220021347A1
公开(公告)日：2022-01-20
申请号：US16928722
申请日：2020-07-14
Applicant: pSemi Corporation
Inventor： David KOVAC , Joseph GOLAT
Abstract: Methods and apparatuses for controlling gain of a single stage cascode FET amplifier are presented. According to one aspect, a series-connected resistor and capacitor is coupled to a gate of a cascode FET transistor of the amplifier, the capacitor providing a short at frequencies of operation of the amplifier. According to another aspect, values of the resistor can be used to control gain of the amplifier. According to yet another aspect, the resistor is a variable resistor whose value can be controlled/adjusted to provide different gains of the amplifier according to a linear function of the resistor value. An input matching network coupled to an input of the amplifier can be used to compensate for different noise figure degradations from different values of the resistor.
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公开(公告)号：US20230145951A1
公开(公告)日：2023-05-11
申请号：US17933340
申请日：2022-09-19
Applicant: pSemi Corporation
Inventor： David KOVAC , Joseph GOLAT
CPC classification number: H03F1/223 , H03F3/72 , H03F3/195 , H03F1/565 , H03F2200/381 , H03F2200/294 , H03F2200/451
Abstract: Methods and apparatuses for controlling gain of a single stage cascode FET amplifier are presented. According to one aspect, a series-connected resistor and capacitor is coupled to a gate of a cascode FET transistor of the amplifier, the capacitor providing a short at frequencies of operation of the amplifier. According to another aspect, values of the resistor can be used to control gain of the amplifier. According to yet another aspect, the resistor is a variable resistor whose value can be controlled/adjusted to provide different gains of the amplifier according to a linear function of the resistor value. An input matching network coupled to an input of the amplifier can be used to compensate for different noise figure degradations from different values of the resistor.
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公开(公告)号：US20220216582A1
公开(公告)日：2022-07-07
申请号：US17143011
申请日：2021-01-06
Applicant: pSemi Corporation
Inventor： Joseph GOLAT , David KOVAC
IPC: H01P5/16
Abstract: Methods and apparatuses for providing a tunable Wilkinson power splitter are presented. According to one aspect, the tunable splitter includes tunable branches realized via lumped elements that provide controlled impedance and phase at different selectable center frequencies of operation. For each of the center frequencies, the tunable Wilkinson splitter has a performance according to a corresponding fixed center frequency Wilkinson power splitter provided by a relatively narrow instantaneous bandwidth. Over a number of the center frequencies supported, performances of the tunable Wilkinson splitter overlap to provide a combined performance having a desired wider bandwidth. According to another aspect, each of the tunable branches includes an LC network that includes tunable capacitors and inductors. One or more of the tunable Wilkinson power splitters can be cascaded to provide a performance according to a wider instantaneous bandwidth.
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公开(公告)号：US20210075420A1
公开(公告)日：2021-03-11
申请号：US16561859
申请日：2019-09-05
Applicant: pSemi Corporation
Inventor： David KOVAC , Joseph GOLAT , Ronald EUGENE REEDY , Tero TAPIO RANTA , Erica POOLE
IPC: H03K17/687 , H03K3/037
Abstract: A single supply RF switch driver. The single supply RF switch driver includes an inverter, where a first resistor has been integrated within the inverter, and the resistor is connected to an RF switch. In one aspect, the integration of the first resistor within the inverter allows for the elimination of a negative power supply for the inverter, while maximizing the isolation achieved in the RF switch. In another aspect, the driver is a configured to have a second resistor integrated within the inverter. A third resistor is connected between the gate of the RF switch and the inverter. In an alternate aspect, the driver operates from a positive power supply and a negative power supply, thus increasing the isolation in the RF switch even further.
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