公开(公告)号：US4238434A

公开(公告)日：1980-12-09

申请号：US008851

申请日：1979-02-02

申请人： Ryo Enomoto ,  Hiroyuki Tanaka ,  Kazuhisa Hara

发明人： Ryo Enomoto ,  Hiroyuki Tanaka ,  Kazuhisa Hara

IPC分类号： C04B35/565 ,  C01B31/36 ,  C04B35/56

CPC分类号： C04B35/565

摘要： A method of producing a silicon carbide sintered body is disclosed. The sintered body having a density of at least 2.4 g/cm.sup.3 is produced by preparing a mixture consisting mainly of silicon carbide with an average particle size of not more than 3.0 microns and a temporary binder, shaping the mixture into a green body and sintering the green body at a temperature of 1,750.degree. C.-2,100.degree. C. Before the sintering, silicon carbide is contacted with either hydrofluoric acid or anhydrous hydrofluoric acid and an atmosphere is held in a non-oxidizing state after the contact treatment up to the completion of the sintering.

摘要翻译： 公开了一种生产碳化硅烧结体的方法。 通过制备主要由平均粒度不大于3.0微米的碳化硅组成的混合物和临时粘结剂，将该混合物制成生坯并烧结至少为2.4g / cm3的烧结体 生坯在1750℃-2,100℃的温度下烧结之前，将碳化硅与氢氟酸或无水氢氟酸接触，并在接触处理后将其保持在非氧化状态，直到完成 的烧结。

公开(公告)号：US4292276A

公开(公告)日：1981-09-29

申请号：US18939

申请日：1979-03-09

申请人： Ryo Enomoto ,  Mitihiro Yoshioka ,  Takao Yokoyama

发明人： Ryo Enomoto ,  Mitihiro Yoshioka ,  Takao Yokoyama

IPC分类号： C01B31/36 ,  C01D1/32 ,  H05B7/18

CPC分类号： C01B31/36 ,  C01P2002/72 ,  C01P2006/80

摘要： An apparatus for producing silicon carbide consisting mainly of .beta.-type crystal are disclosed. The fine silicon carbide consisting mainly of .beta.-type crystal is produced by charging the starting material of silica and carbon with a mole ratio of C/SiO.sub.2 of 3.2-5.0 into a top portion of a vertical-type reaction vessel having a preheating zone, a heating zone and a cooling zone in this order, descending the starting material by gravity through the reaction vessel, heating the starting material in the heating zone at a temperature of 1,600.degree.-2,100.degree. C. by electrically indirect heating in horizontal direction to effect the formation of SiC, cooling the resulting reaction product in the cooling zone under a non-oxidizing atmosphere, and recovering the cooled product from the bottom portion of the reaction vessel to obtain a product having a composition ratio by weight of silicon carbide, silica and free carbon which lies within the area represented by the area ABCD shown in Fig. 1 of the accompanying drawings.

摘要翻译： 公开了一种主要由β型晶体组成的碳化硅的制造装置。 主要由β型晶体组成的精细碳化硅通过以C / SiO 2摩尔比为3.2-5.0的二氧化硅和碳原料装入具有预热区域的垂直型反应容器的顶部， 加热区域和冷却区域，通过重力将原料下降通过反应容器，通过在水平方向上电间接加热来加热在加热区中的原料在1600℃-2100℃ 形成SiC，在非氧化性气氛下在冷却区中冷却所得到的反应产物，并从反应容器的底部回收冷却的产物，得到碳化硅，二氧化硅和 位于由图1所示的区域ABCD表示的区域内的游离碳。 附图1。

公开(公告)号：US4327067A

公开(公告)日：1982-04-27

申请号：US109114

申请日：1980-01-02

申请人： Kunio Kato ,  Yoshiki Sugiyama ,  Ryo Enomoto

发明人： Kunio Kato ,  Yoshiki Sugiyama ,  Ryo Enomoto

IPC分类号： B01J8/24 ,  B01J8/32 ,  C01B31/30 ,  C01B31/34 ,  C01B31/36

CPC分类号： B01J8/32 ,  C01B31/30 ,  C01B31/305 ,  C01B31/36 ,  C01P2006/80 ,  Y10S423/16

摘要： Metal carbide powders containing free carbon which have heretofore been difficult to refine can be refined excellently by charging the metal carbide powders in a fluidizing bed consisting of fluidized heat-resistant particles and having a temperature of a determined range to burn and remove the free carbon contained therein, and by subsequently discharging refined metal carbide powders and combustion gas from an upper part of the fluidizing bed for recovery of the refined metal carbide powders.

摘要翻译： 迄今为止难以精炼的含有游离碳的金属碳化物粉末可以通过在由流化的耐热颗粒组成的流化床中并且具有确定的范围的温度进行烧制并除去所含的游离碳来极好地精炼 并且随后从流化床的上部排出精炼的金属碳化物粉末和燃烧气体，以回收精炼的金属碳化物粉末。

公开(公告)号：US4526734A

公开(公告)日：1985-07-02

申请号：US352477

申请日：1982-02-26

申请人： Ryo Enomoto

发明人： Ryo Enomoto

IPC分类号： C04B35/565 ,  C04B35/34

CPC分类号： C04B35/565

摘要： A process for producing a silicon carbide sintered body is disclosed, which comprises the steps of charging a sintering raw material consisting mainly of silicon carbide fine powder and sintering aid into a dispersion medium together with, if necessary, at least one substance of a molding assistant and a deflocculating agent to form such a uniform suspension that a volume ratio of solid content composed of said silicon carbide fine powder and sintering aid in said suspension is not more than 15%; spray freezing said suspension in an atmosphere held at a temperature lower than a melting point of said dispersion medium to obtain a granular frozen body; freeze drying said granular frozen body for sublimation of said dispersion medium to obtain a powdery dried mixture; shaping said powdery dried mixture into a green body of an optional form; and sintering said green body without pressing.

摘要翻译： 公开了一种制造碳化硅烧结体的方法，其包括如下步骤：将主要由碳化硅细粉末和烧结助剂组成的烧结原料与必要时的至少一种成型助剂物质一起加入到分散介质中 和形成这样的均匀悬浮液的抗絮凝剂，所述悬浮液中由所述碳化硅微粉末和烧结助剂构成的固体含量的体积比不大于15％; 在保持在低于所述分散介质的熔点的温度的气氛中将所述悬浮液喷雾冷冻以获得颗粒状冷冻体; 冷冻干燥所述颗粒状冷冻体以升华所述分散介质，得到粉末状干燥混合物; 将所述粉末状干燥混合物成形为可选形式的生坯; 并且不压制烧结所述生坯。

公开(公告)号：US4390504A

公开(公告)日：1983-06-28

申请号：US316964

申请日：1981-10-30

申请人： Ryo Enomoto ,  Michihiro Yoshioka ,  Takao Yokoyama

发明人： Ryo Enomoto ,  Michihiro Yoshioka ,  Takao Yokoyama

IPC分类号： C01B31/36 ,  B01J19/02

CPC分类号： C01B31/36

摘要： .beta.-type silicon carbide having exceedingly high purity is stably and continuously produced in an apparatus comprising a vertical type reaction vessel having an inlet, a preheating zone, a heating zone, a cooling zone and a closable outlet which are sequentially communicated in this order in vertical direction, and a heat insulating layer composed essentially of fine powders of graphite and carbonaceous materials arranged on at least outside of the heating zone, the heating zone of the reaction vessel being made of graphite and having a heating means to indirectly and electrically heat charged materials, the preheating zone having a horizontal cross-sectional area larger than that of the heating zone at any level above an arbitrary position of the preheating zone.

摘要翻译： 在包括具有入口，预热区，加热区，冷却区和可关闭出口的垂直型反应容器的设备中稳定且连续地生产具有非常高纯度的β型碳化硅，该反应容器依次顺序地连通 并且绝热层基本上由布置在加热区的至少外部的石墨和含碳材料的细粉末组成，反应容器的加热区由石墨制成，并且具有加热装置以间接和电热加热 材料，预热区域的水平横截面面积大于加热区域的任何水平高于预热区域任意位置的水平横截面面积。

公开(公告)号：US4162167A

公开(公告)日：1979-07-24

申请号：US797609

申请日：1977-05-16

申请人： Ryo Enomoto ,  Mitihiro Yoshioka ,  Takao Yokoyama

发明人： Ryo Enomoto ,  Mitihiro Yoshioka ,  Takao Yokoyama

IPC分类号： C01B31/36 ,  C04B35/56

CPC分类号： C01B31/36 ,  C01P2002/72 ,  C01P2006/80

摘要： A process and an apparatus for producing silicon carbide consisting mainly of .beta.-type crystal are disclosed. The fine silicon carbide consisting mainly of .beta.-type crystal is produced by charging the starting material of silica and carbon with a mole ratio of C/SiO.sub.2 of 3.2-5.0 into a top portion of a vertical-type reaction vessel having a preheating zone, a heating zone and a cooling zone in this order, descending the starting material by gravity through the reaction vessel, heating the starting material in the heating zone at a temperature of 1,600.degree.-2,100.degree. C. by electrically indirect heating in horizontal direction to effect the formation of SiC, cooling the resulting reaction product in the cooling zone under a non-oxidizing atmosphere, and recovering the cooled product from the bottom portion of the reaction vessel to obtain a product having a composition ratio by weight of silicon carbide, silica and free carbon which lies within the area represented by the area ABCD shown in FIG. 1 of the accompanying drawings.

摘要翻译： 公开了一种用于生产主要由β型晶体组成的碳化硅的方法和装置。 主要由β型晶体组成的精细碳化硅通过以C / SiO 2摩尔比为3.2-5.0的二氧化硅和碳原料装入具有预热区域的垂直型反应容器的顶部， 加热区域和冷却区域，通过重力将原料下降通过反应容器，通过在水平方向上电间接加热来加热在加热区中的原料在1600℃-2100℃ 形成SiC，在非氧化性气氛下在冷却区中冷却所得到的反应产物，并从反应容器的底部回收冷却的产物，得到碳化硅，二氧化硅和 位于由图1所示的区域ABCD表示的区域内的游离碳。 附图1。