公开(公告)号：US4390504A

公开(公告)日：1983-06-28

申请号：US316964

申请日：1981-10-30

申请人： Ryo Enomoto ,  Michihiro Yoshioka ,  Takao Yokoyama

发明人： Ryo Enomoto ,  Michihiro Yoshioka ,  Takao Yokoyama

IPC分类号： C01B31/36 ,  B01J19/02

CPC分类号： C01B31/36

摘要： .beta.-type silicon carbide having exceedingly high purity is stably and continuously produced in an apparatus comprising a vertical type reaction vessel having an inlet, a preheating zone, a heating zone, a cooling zone and a closable outlet which are sequentially communicated in this order in vertical direction, and a heat insulating layer composed essentially of fine powders of graphite and carbonaceous materials arranged on at least outside of the heating zone, the heating zone of the reaction vessel being made of graphite and having a heating means to indirectly and electrically heat charged materials, the preheating zone having a horizontal cross-sectional area larger than that of the heating zone at any level above an arbitrary position of the preheating zone.

摘要翻译： 在包括具有入口，预热区，加热区，冷却区和可关闭出口的垂直型反应容器的设备中稳定且连续地生产具有非常高纯度的β型碳化硅，该反应容器依次顺序地连通 并且绝热层基本上由布置在加热区的至少外部的石墨和含碳材料的细粉末组成，反应容器的加热区由石墨制成，并且具有加热装置以间接和电热加热 材料，预热区域的水平横截面面积大于加热区域的任何水平高于预热区域任意位置的水平横截面面积。

公开(公告)号：US4292276A

公开(公告)日：1981-09-29

申请号：US18939

申请日：1979-03-09

申请人： Ryo Enomoto ,  Mitihiro Yoshioka ,  Takao Yokoyama

发明人： Ryo Enomoto ,  Mitihiro Yoshioka ,  Takao Yokoyama

IPC分类号： C01B31/36 ,  C01D1/32 ,  H05B7/18

CPC分类号： C01B31/36 ,  C01P2002/72 ,  C01P2006/80

摘要： An apparatus for producing silicon carbide consisting mainly of .beta.-type crystal are disclosed. The fine silicon carbide consisting mainly of .beta.-type crystal is produced by charging the starting material of silica and carbon with a mole ratio of C/SiO.sub.2 of 3.2-5.0 into a top portion of a vertical-type reaction vessel having a preheating zone, a heating zone and a cooling zone in this order, descending the starting material by gravity through the reaction vessel, heating the starting material in the heating zone at a temperature of 1,600.degree.-2,100.degree. C. by electrically indirect heating in horizontal direction to effect the formation of SiC, cooling the resulting reaction product in the cooling zone under a non-oxidizing atmosphere, and recovering the cooled product from the bottom portion of the reaction vessel to obtain a product having a composition ratio by weight of silicon carbide, silica and free carbon which lies within the area represented by the area ABCD shown in Fig. 1 of the accompanying drawings.

摘要翻译： 公开了一种主要由β型晶体组成的碳化硅的制造装置。 主要由β型晶体组成的精细碳化硅通过以C / SiO 2摩尔比为3.2-5.0的二氧化硅和碳原料装入具有预热区域的垂直型反应容器的顶部， 加热区域和冷却区域，通过重力将原料下降通过反应容器，通过在水平方向上电间接加热来加热在加热区中的原料在1600℃-2100℃ 形成SiC，在非氧化性气氛下在冷却区中冷却所得到的反应产物，并从反应容器的底部回收冷却的产物，得到碳化硅，二氧化硅和 位于由图1所示的区域ABCD表示的区域内的游离碳。 附图1。

公开(公告)号：US4162167A

公开(公告)日：1979-07-24

申请号：US797609

申请日：1977-05-16

申请人： Ryo Enomoto ,  Mitihiro Yoshioka ,  Takao Yokoyama

发明人： Ryo Enomoto ,  Mitihiro Yoshioka ,  Takao Yokoyama

IPC分类号： C01B31/36 ,  C04B35/56

CPC分类号： C01B31/36 ,  C01P2002/72 ,  C01P2006/80

摘要： A process and an apparatus for producing silicon carbide consisting mainly of .beta.-type crystal are disclosed. The fine silicon carbide consisting mainly of .beta.-type crystal is produced by charging the starting material of silica and carbon with a mole ratio of C/SiO.sub.2 of 3.2-5.0 into a top portion of a vertical-type reaction vessel having a preheating zone, a heating zone and a cooling zone in this order, descending the starting material by gravity through the reaction vessel, heating the starting material in the heating zone at a temperature of 1,600.degree.-2,100.degree. C. by electrically indirect heating in horizontal direction to effect the formation of SiC, cooling the resulting reaction product in the cooling zone under a non-oxidizing atmosphere, and recovering the cooled product from the bottom portion of the reaction vessel to obtain a product having a composition ratio by weight of silicon carbide, silica and free carbon which lies within the area represented by the area ABCD shown in FIG. 1 of the accompanying drawings.

摘要翻译： 公开了一种用于生产主要由β型晶体组成的碳化硅的方法和装置。 主要由β型晶体组成的精细碳化硅通过以C / SiO 2摩尔比为3.2-5.0的二氧化硅和碳原料装入具有预热区域的垂直型反应容器的顶部， 加热区域和冷却区域，通过重力将原料下降通过反应容器，通过在水平方向上电间接加热来加热在加热区中的原料在1600℃-2100℃ 形成SiC，在非氧化性气氛下在冷却区中冷却所得到的反应产物，并从反应容器的底部回收冷却的产物，得到碳化硅，二氧化硅和 位于由图1所示的区域ABCD表示的区域内的游离碳。 附图1。

公开(公告)号：US20070096289A1

公开(公告)日：2007-05-03

申请号：US11529319

申请日：2006-09-29

申请人： Ryo Enomoto ,  Tadahiro Ohmi ,  Akihiro Morimoto

发明人： Ryo Enomoto ,  Tadahiro Ohmi ,  Akihiro Morimoto

IPC分类号： H01L23/24 ,  H01L23/12 ,  H01L23/22

CPC分类号： H01L23/5389 ,  H01L23/49827 ,  H01L24/24 ,  H01L24/82 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/2402 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/8203 ,  H01L2224/82047 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/1058 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15331 ,  H01L2924/30107 ,  H01L2924/3511 ,  H01L2224/82

摘要： For the purpose of providing a semiconductor element built-in type multilayered circuit board in which a semiconductor element is closely joined to a recess of an insulating substrate to effectively disperse heat generated from the semiconductor element through the insulating substrate at a working temperature region of the semiconductor element circuit board, to surely conduct an electrical connection of an electronic part such as semiconductor element or the like in a short wiring and to enable the high density mounting of semiconductor elements, miniaturization and increase of working speed, there is proposed a semiconductor element built-in type multilayered circuit board formed by laminating a plurality of semiconductor element built-in type boards each comprising an insulating substrate and a semiconductor element accommodated in a recess formed therein, characterized in that a difference between a linear expansion coefficient of the insulating substrate and a linear expansion coefficient of the semiconductor element in a temperature zone of 20-300° C. is less than 1×10−5/K.

摘要翻译： 为了提供半导体元件内置型多层电路板，其中半导体元件紧密接合到绝缘基板的凹部，以在半导体元件的工作温度区域有效地分散通过绝缘基板从半导体元件产生的热量 半导体元件电路板，可靠地将诸如半导体元件等的电子部件的电连接在短布线中，并且能够实现半导体元件的高密度安装，小型化和提高工作速度，提出了半导体元件 内置型多层电路板，其通过层叠多个半导体元件内置型板而形成，所述多个半导体元件内置型基板包括绝缘基板和容纳在其中形成的凹部中的半导体元件，其特征在于，所述绝缘基板的线膨胀系数 和线性膨胀公司 温度范围为20-300℃的半导体元件的效率小于1×10 -5 / K。

公开(公告)号：US06320140B1

公开(公告)日：2001-11-20

申请号：US09147372

申请日：1998-12-10

申请人： Ryo Enomoto

发明人： Ryo Enomoto

IPC分类号： H01R2368

CPC分类号： H05K3/4617 ,  H05K3/28 ,  H05K3/4069 ,  H05K2201/0195 ,  H05K2203/1572 ,  Y10T29/49124

摘要： A single-sided circuit substrate for a multilayer printed writing board has an insulating hard substrate, a conductor circuit formed on a surface of the substrate, an adhesive layer formed on the other surface, and at least one viahole through the substrate and the adhesive layer so as to pass these layers and contact with the conductor. The viaholes are filled with conductive paste. The invention also provides a multilayer printed wiring board having an IVH structure constituted with single-sided circuit hard substrates and a method of efficiently manufacturing the same with high yield.

摘要翻译： 用于多层印刷书写用基板的单面电路基板具有绝缘性硬质基板，形成在基板表面上的导体电路，在另​​一面上形成的粘合层，以及至少一个通过基板的通孔和粘合层 以便通过这些层并与导体接触。 通孔用导电膏填充。 本发明还提供一种具有由单面电路硬质基板构成的IVH结构的多层印刷电路板及其高效制造方法。

公开(公告)号：US5021472A

公开(公告)日：1991-06-04

申请号：US357693

申请日：1989-05-25

申请人： Ryo Enomoto

发明人： Ryo Enomoto

IPC分类号： C23C18/20 ,  H01R4/02 ,  H01R4/04 ,  H05K3/18 ,  H05K3/38

CPC分类号： H01R4/04 ,  C23C18/2013 ,  C23C18/2033 ,  C23C18/2086 ,  C23C18/26 ,  C23C18/30 ,  H05K3/387 ,  H01R4/02 ,  H05K2201/0212 ,  H05K2203/0773 ,  H05K3/181

摘要： An adhesive for electroless plating is composed of at least one kind of fine powders selected from either a cured heat resistant resin or an inorganic material and easily soluble in a predetermined solution and a heat resistant resin solution sparingly soluble in the predetermined solution by curing treatment. The adhesive for electroless plating in which the above fine powders are dispersed in the above uncured heat resistant resin solution, is coated on a circuit board, dried and cured to form an adhesive layer. When the above predetermined solution contacts with the surface of the adhesive layer, its surface is roughed to be formed a plating film having an excellent adhesiveness by electroless plating.

摘要翻译： 用于化学镀的粘合剂由选自固化的耐热树脂或无机材料中的至少一种细粉末组成，并且易于溶解在预定溶液中，以及通过固化处理微溶于预定溶液中的耐热树脂溶液。 将上述细粉末分散在上述未固化的耐热性树脂溶液中的无电解电镀用粘合剂涂布在电路基板上，干燥固化，形成粘接层。 当上述预定溶液与粘合剂层的表面接触时，其表面被粗糙化，以形成具有通过无电镀的优异粘合性的镀膜。

公开(公告)号：US4953943A

公开(公告)日：1990-09-04

申请号：US452506

申请日：1989-12-19

申请人： Yasumitsu Miyazaki ,  Ryo Enomoto ,  Masaya Yamada

发明人： Yasumitsu Miyazaki ,  Ryo Enomoto ,  Masaya Yamada

IPC分类号： G02F1/377

CPC分类号： G02F1/377

摘要： A second harmonic wave generating device comprising a LiNbO.sub.3 thin film waveguide layer formed on a LiTaO.sub.3 substrate, in which the fundamental wavelength (.lambda..mu.m), the thickness (T .mu.m) of the LiNbO.sub.3 thin film waveguide layer, the ordinary refractive index (n.sub.oS1) of the LiTaO.sub.3 substrate at the fundamental wavelength (.lambda..mu.m), the ordinary refractive index (n.sub.oF1) of the LiNbO.sub.3 thin film waveguide layer at the fundamental wavelength (.lambda..mu.m), the extraordinary refractive index (n.sub.eS2) of the LiTaO.sub.3 substrate at a second harmonic wavelength (.lambda..mu.m/2), and the extraordinary refractive indes (n e F 2) of the LiNbO.sub.3 thin film waveguide layer at the second harmonic wavelength (.lambda..mu.m/2) are individually within the following specific ranges:.lambda.=0.68 to 0.94 .mu.mT=0.3 to 16 .mu.mn.sub.oF1 =2.22 to 2.38n.sub.oS1 =2.10 to 2.25n.sub.eF2 =2.24 to 2.43n.sub.eS2 =2.22 to 2.38

公开(公告)号：US4537735A

公开(公告)日：1985-08-27

申请号：US479331

申请日：1983-03-28

申请人： Ryo Enomoto ,  Kiyotaka Tsukada

发明人： Ryo Enomoto ,  Kiyotaka Tsukada

IPC分类号： C04B35/584 ,  B07B1/00 ,  C04B35/565 ,  C04B35/626 ,  C04B35/56

CPC分类号： B07B1/00 ,  C04B35/565 ,  B07B2230/04

摘要： In a method of producing a silicon carbide sintered compact comprising steps of placing silicon carbide fines, a sintering additive and a shaping additive as required into a dispersing medium solution to form a supensoid, sieving operation on said suspensoid, forming a green shape from powders obtained in said sieving operation, and pressureless sintering process; an improvement characterized is that solid content comprising said silicon carbide fines and sintering additive is limited within a range of 10-50% by volume to said suspensoid, and that in the sieving operation, the suspensoid is passed through a sieve having an opening less than 65 .mu.m under a pressure differential between before and after the sieve to remove coarse particles in the silicon carbide fines, sintering additive and others to form silicon carbide sintered compact having a high strength.

摘要翻译： 在制造碳化硅烧结体的方法中，包括以下步骤：将碳化硅细粒，烧结添加剂和成型添加剂根据需要放置在分散介质溶液中以形成超滤液，在所述悬浮体上进行筛分操作，由获得的粉末形成绿色 在筛分操作和无压烧结过程中; 其特征在于，包含所述碳化硅细粒和烧结添加剂的固体含量被限制在所述悬浮体的10-50体积％的范围内，并且在筛分操作中，将悬浮液通过开口小于 在筛子前后的压差为65微米，以除去碳化硅细粒中的粗颗粒，烧结添加剂等形成具有高强度的碳化硅烧结体。

公开(公告)号：US4529575A

公开(公告)日：1985-07-16

申请号：US524391

申请日：1983-08-18

申请人： Ryo Enomoto ,  Toshikazu Amino

发明人： Ryo Enomoto ,  Toshikazu Amino

IPC分类号： B01J8/12 ,  C01B31/36 ,  C09C1/56

CPC分类号： B01J8/12 ,  C01B31/36 ,  C09C1/565 ,  C01P2004/03 ,  C01P2004/50 ,  C01P2006/12 ,  C01P2006/21 ,  C01P2006/80

摘要： A process for producing an ultrafine silicon carbide powder by passing a granulated blend of silica powder, carbon powder and a carbonaceous binder downwardly through a vertical indirect heating reactor, wherein means are provided for increasing the bulk density of the carbon powder for preventing the disintegration of the blend during the reaction which might result from the use of ultrafine powder as the carbon powder in the blend.

摘要翻译： 通过将二氧化硅粉末，碳粉末和碳质粘合剂的颗粒状混合物向下通过垂直间接加热反应器制备超细碳化硅粉末的方法，其中提供了用于增加碳粉末的堆积密度以防止崩解的方法 反应期间的共混物可能由于使用超细粉末作为共混物中的碳粉而产生。

公开(公告)号：US20060037193A1

公开(公告)日：2006-02-23

申请号：US11244728

申请日：2005-10-06

申请人： Ryo Enomoto ,  Yasuji Hiramatsu

发明人： Ryo Enomoto ,  Yasuji Hiramatsu

IPC分类号： H05K1/03

CPC分类号： H05K3/4617 ,  H05K3/0035 ,  H05K3/28 ,  H05K3/382 ,  H05K3/386 ,  H05K3/423 ,  H05K3/4602 ,  H05K3/4652 ,  H05K2201/0195 ,  H05K2201/035 ,  H05K2201/0394 ,  H05K2201/09563 ,  H05K2203/0733 ,  H05K2203/1189 ,  Y10T29/49117 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49165

摘要： Holes (40a) are formed with a laser beam through an insulating substrate (40) on which a metallic layer (42) is formed and via holes (36a) are formed by filling up the holes (40a) with a metal (46). After the via holes (36a) are formed, a conductor circuit (32a) is formed by etching the metallic layer (42) and a single-sided circuit board (30A) is formed by forming projecting conductors (38a) on the surfaces of the via holes (36a). The projecting conductors (38a) on the circuit board (30A) are put on the conductor circuit (32b) of another single-sided circuit board (30B) with adhesive layers (50) composed of an uncured resin in-between and heated and pressed against the circuit (32b). The projecting conductors (38a) get in the uncured resin by pushing aside the resin and are electrically connected to the circuit (32b). Since single-sided circuit boards (30A, 30B, 30C, and 30D) can be inspected for defective parts before the boards (30A, 30B, 30C, and 30D) are laminated upon one another, only defectless single-sided circuit can be used in the step of lamination.

摘要翻译： 孔（40a）通过绝缘基板（40）形成有激光束，绝缘基板（40）上形成有金属层（42），并且通过用金属填充孔（40a）形成通孔（36a） 46）。 在形成通孔（36a）之后，通过蚀刻金属层（42）形成导体电路（32a），并且通过形成突出导体（38a）形成单面电路板（30A） 通孔（36a）的表面。 电路板（30A）上的突出导体（38a）被放置在另一单面电路板（30B）的导体电路（32b）上，其中粘合剂层（50）由其中之间的未固化树脂构成 并加热并压靠在电路（32b）上。 突出导体（38a）通过推开树脂并与电路（32b）电连接而进入未固化树脂。 由于单板电路板（30A，30B，30C和30D）在板（30A，30B，30C和30D）彼此层压之前可以检查有缺陷的部件，只有 无缺陷单面电路可用于层压步骤。