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    Scalable Position-Sensitive Photodetector Device
    4.
    发明申请
    Scalable Position-Sensitive Photodetector Device 有权

    公开(公告)号：US20210066382A1

    公开(公告)日：2021-03-04

    申请号：US16557149

    申请日：2019-08-30

    Applicant: LightSpin Technologies Inc.

    Inventor： Eric Harmon

    IPC: H01L27/146 ,  H01L27/144 ,  H01L31/107

    Abstract: A position-sensitive photodetector device includes a grid of series-connected photodetectors that are electrically coupled to either a vertical photodetector array (VA photodetectors) or to a horizontal photodetector array (HA photodetectors). The VA and HA photodetectors are arranged in an alternating sequence along rows and/or columns throughout the grid. A horizontal-position readout line is electrically coupled to a termination of each vertical photodetector array, and a vertical-position readout line is electrically coupled to a termination of each horizontal photodetector array.

    Integrated avalanche photodiode arrays
    5.
    发明授权
    Integrated avalanche photodiode arrays 有权

    公开(公告)号：US09768211B2

    公开(公告)日：2017-09-19

    申请号：US14705270

    申请日：2015-05-06

    Applicant: LightSpin Technologies, Inc.

    Inventor： Eric Harmon

    IPC: H01L27/14 ,  H01L27/144 ,  H01L31/00

    CPC classification number: H01L27/1446 ,  H01L31/00 ,  H01L31/107

    Abstract: A photodetector includes an array of pixels, each pixel comprising a defined doped region defined in a doped semiconductor layer. The defined doped region is defined by selected regions of ion implants to provide resistive isolation between each defined doped region. A capacitor is formed by the defined doped region and a metal layer disposed above the doped semiconductor layer. A contact metal line is disposed above the doped semiconductor layer. The capacitor metal and contact metal lines are electrically coupled together and are in electrical communication with the output of the photodetector array.

    Integrated avalanche photodiode arrays
    6.
    发明授权
    Integrated avalanche photodiode arrays 有权
    集成雪崩光电二极管阵列

    公开(公告)号：US09076707B2

    公开(公告)日：2015-07-07

    申请号：US14257179

    申请日：2014-04-21

    Applicant: LightSpin Technologies, Inc.

    Inventor： Eric S. Harmon

    IPC: H01L27/146 ,  H01L31/107 ,  H01L27/144

    CPC classification number: H01L31/107 ,  H01L27/1446 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14683 ,  H01L31/0352 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

    Abstract: The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.

    Abstract translation: 本公开包括用于检测光子的装置，包括雪崩光子检测器，这种检测器的阵列，以及包括这种阵列的电路。 在一些方面，检测器和阵列包括由电离材料包围的虚拟斜边边缘台面结构，该电阻材料被离子注入损坏，并且具有朝向台面结构的顶部向内逐渐向内倾斜或朝向离子注入发生方向的侧壁轮廓。 其它方面涉及掩蔽和多次植入和/或退火步骤。 此外，公开了制造和使用这些器件，电路和阵列的方法。

    Integrated Avalanche Photodiode Arrays
    7.
    发明申请
    Integrated Avalanche Photodiode Arrays 有权
    集成雪崩光电二极管阵列

    公开(公告)号：US20140312448A1

    公开(公告)日：2014-10-23

    申请号：US14257179

    申请日：2014-04-21

    Applicant: LightSpin Technologies, Inc.

    Inventor： Eric S. Harmon

    IPC: H01L27/146 ,  H01L31/107

    CPC classification number: H01L31/107 ,  H01L27/1446 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14683 ,  H01L31/0352 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

    Abstract: The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.

    Abstract translation: 本公开包括用于检测光子的装置，包括雪崩光子检测器，这种检测器的阵列，以及包括这种阵列的电路。 在一些方面，检测器和阵列包括由电离材料包围的虚拟斜边边缘台面结构，该电阻材料被离子注入损坏，并且具有朝向台面结构的顶部向内逐渐向内倾斜或朝向离子注入发生方向的侧壁轮廓。 其它方面涉及掩蔽和多次植入和/或退火步骤。 此外，公开了制造和使用这些器件，电路和阵列的方法。

    Wide dynamic range photodetector
    8.
    发明申请
    Wide dynamic range photodetector 审中-公开
    宽动态范围光电探测器

    公开(公告)号：US20060124832A1

    公开(公告)日：2006-06-15

    申请号：US11234958

    申请日：2005-09-26

    Applicant: Eric Harmon ,  David Salzman

    Inventor： Eric Harmon ,  David Salzman

    IPC: H01J40/14 ,  H01L31/00

    CPC classification number: G01T1/2928 ,  G01T1/24 ,  G01T1/248 ,  H01L27/1446 ,  H01L27/146

    Abstract: The invention provides a means of enhancing the dynamic range and linearity of photodetectors and imaging photodetector arrays. This is achieved by combining Geiger mode avalanche photodiodes (APDs) capable of high efficiency detection of single photons and conventional semiconductor photodetectors with poor noise floors to simultaneously achieve high efficiency detection of single photons and a wide dynamic range.

    Abstract translation: 本发明提供了增强光电检测器和成像光电检测器阵列的动态范围和线性度的方法。 这是通过将能够高效检测单个光子的Geiger模式雪崩光电二极管（APD）与具有较差噪声底层的常规半导体光电探测器结合起来实现的，以同时实现单光子的高效率检测和宽动态范围。

    Scalable position-sensitive photodetector device
    10.
    发明授权
    Scalable position-sensitive photodetector device 有权

    公开(公告)号：US11264422B2

    公开(公告)日：2022-03-01

    申请号：US16557149

    申请日：2019-08-30

    Applicant: LightSpin Technologies Inc.

    Inventor： Eric Harmon

    IPC: H01L27/146 ,  H01L27/144 ,  H01L31/107

    Abstract: A position-sensitive photodetector device includes a grid of series-connected photodetectors that are electrically coupled to either a vertical photodetector array (VA photodetectors) or to a horizontal photodetector array (HA photodetectors). The VA and HA photodetectors are arranged in an alternating sequence along rows and/or columns throughout the grid. A horizontal-position readout line is electrically coupled to a termination of each vertical photodetector array, and a vertical-position readout line is electrically coupled to a termination of each horizontal photodetector array.

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