公开(公告)号：US07645526B2

公开(公告)日：2010-01-12

申请号：US10546798

申请日：2003-09-16

申请人： Kyoichi Inaki ,  Itsuo Araki

发明人： Kyoichi Inaki ,  Itsuo Araki

IPC分类号： B32B9/00 ,  B32B19/00 ,  C03C3/04 ,  C03C3/06 ,  C04B35/50

CPC分类号： C23C26/00 ,  C23C4/11 ,  C23C4/18 ,  C23C30/00 ,  H01J37/32477 ,  H01L21/67069

摘要： A member for a plasma etching device, comprising a coating film of yttrium oxide or YAG having a coating film thickness of 10 μm or more, a coating film thickness variance of 15% or less, preferably a surface roughness (Ra) of 1 μm or less, formed on a surface of a member, comprising quartz glass which contains 1 to 10% by weight of yttrium oxide or YAG. The member for a plasma etching device has high plasma resistance, is not subjected to an abnormal etching on the basis of a partial change of electric properties and, accordingly, can be used for a long period of time. Even when the member is large enough to handle 12-inch Si wafers, the above-described advantageous properties are maintained and the member can be used for a long period of time.

摘要翻译： 一种用于等离子体蚀刻装置的构件，其包括涂覆膜厚度为10μm或更大，涂膜厚度变化为15％或更小，优选表面粗糙度（Ra）为1μm或更大的氧化钇涂层或YAG涂层，或 较少，形成在构件的表面上，包括含有1-10重量％的氧化钇或YAG的石英玻璃。 用于等离子体蚀刻装置的构件具有高等离子体电阻，不会基于电性能的部分变化而进行异常蚀刻，因此可以长时间使用。 即使当该构件足够大以处理12英寸Si晶片时，仍保持上述有利的特性，并且该构件可以长时间使用。

公开(公告)号：US07007510B2

公开(公告)日：2006-03-07

申请号：US10731186

申请日：2003-12-09

申请人： Tetsuji Ueda ,  Akira Fujinoki ,  Hiroyuki Nishimura ,  Martin Trommer ,  Stefan Ochs

发明人： Tetsuji Ueda ,  Akira Fujinoki ,  Hiroyuki Nishimura ,  Martin Trommer ,  Stefan Ochs

IPC分类号： C03C23/00

CPC分类号： C03C23/007 ,  C03B19/1453 ,  C03B32/00 ,  Y10T428/131 ,  Y10T428/24612

摘要： An object of the present invention is to provide an improved blank such that an optical member of a high homogeneity can be obtained therefrom, and to provide a vessel and a heat treatment method for heat-treating a highly uniform synthetic quartz blank. In a first aspect of the invention a special designed blank is provided showing a concave shaped outer surface. In a second aspect of the invention a special designed vessel for heat-treating blanks is provided, whereby the degree of heat emission at the center is set higher than that of the surroundings.

摘要翻译： 本发明的目的是提供一种改进的坯料，使得可以获得高均匀性的光学构件，并提供用于热处理高度均匀的合成石英坯的容器和热处理方法。 在本发明的第一方面，提供了一种特殊设计的坯件，其显示出凹形外表面。 在本发明的第二方面，提供了一种用于热处理坯料的特殊设计容器，由此将中心处的发热度设定为高于周围环境的热量。

公开(公告)号：US20100065316A1

公开(公告)日：2010-03-18

申请号：US12447653

申请日：2007-11-07

申请人： Akira Sato ,  Akira Fujinoki ,  Hiroyuku Nishimura ,  Tsukasa Sakaguchi

发明人： Akira Sato ,  Akira Fujinoki ,  Hiroyuku Nishimura ,  Tsukasa Sakaguchi

IPC分类号： H05K1/02 ,  D03D15/00 ,  B32B5/00

CPC分类号： H05K1/0366 ,  D02G3/04 ,  D02G3/18 ,  D03D1/0082 ,  D03D1/0088 ,  D03D15/00 ,  D03D15/0011 ,  D03D15/0016 ,  D03D15/0027 ,  D10B2101/06 ,  D10B2201/00 ,  D10B2321/02 ,  D10B2321/021 ,  D10B2321/022 ,  D10B2321/121 ,  H05K1/024 ,  H05K2201/0158 ,  H05K2201/0278 ,  H05K2201/029 ,  Y10T442/30 ,  Y10T442/313 ,  Y10T442/3138 ,  Y10T442/3976

摘要： Disclosed is a printed wiring board which attains aims of printed wiring boards required for realizing high-speed, high-frequency semiconductor devices, namely a printed wiring board having low dielectric constant, low dielectric loss tangent and low linear expansion coefficient. Also disclosed is a composite woven fabric suitably used as a base material for such a printed wiring board. Specifically disclosed is a composite woven fabric containing quartz glass fibers and polyolefin fibers, in which the ratio of the quartz glass fibers to the composite woven fabric is set at 10 vol % or more and 90 vol % or less. It is preferred that the quartz glass fibers each have a filament diameter of 3 μm or more and 16 μm or less, and the composite woven fabric has a thickness of 200 μm or less.

摘要翻译： 公开了实现高速，高频半导体器件所需的印刷线路板的目的的印刷线路板，即具有低介电常数，低介电损耗角正切和低线膨胀系数的印刷线路板。 还公开了适合用作这种印刷线路板的基材的复合机织织物。 具体公开了含有石英玻璃纤维和聚烯烃纤维的复合机织织物，其中石英玻璃纤维与复合机织织物的比率设定在10体积％以上且90体积％以下。 优选石英玻璃纤维的长丝直径为3μm以上且16μm以下，复合织物的厚度为200μm以下。

公开(公告)号：US5762672A

公开(公告)日：1998-06-09

申请号：US500541

申请日：1995-07-11

申请人： Tooru Ikeda ,  Kazuo Asajima ,  Hiroshi Kimura ,  Hiroyuki Watanabe

发明人： Tooru Ikeda ,  Kazuo Asajima ,  Hiroshi Kimura ,  Hiroyuki Watanabe

IPC分类号： C03B19/09 ,  C03B20/00 ,  C30B15/10 ,  C30B35/00 ,  C03B19/04

CPC分类号： C30B35/002 ,  C03B19/095 ,  C30B15/10 ,  C03B2201/03 ,  Y02P40/57 ,  Y10S65/08

摘要： In a quartz glass crucible obtained by heating and fusing a rotating layer (3) charged with a powder of silicon dioxide, impurity elements are controlled so that copper, chromium, and nickel each amount to 0.5 ppb or less, iron amounts to 120 ppb or less, and sodium amounts to 20 ppb or less. The silicon dioxide powder is supplied to a rotatable mold (1) having an open top, thereby forming a layer (3) charged with silicon dioxide along the inner peripheral wall of the mold. The layer (3) is internally heated and fused while covering the open top with a lid (5) having two or more holes (6,7), and the mold (1) is ventilated to discharge the high temperature gases through the holes (6,7).

摘要翻译： 在通过加热和熔化装有二氧化硅粉末的旋转层（3）而获得的石英玻璃坩埚中，控制杂质元素，使得铜，铬和镍各自为0.5ppb以下，铁量为120ppb或 较少，钠量为20ppb以下。 将二氧化硅粉末供给到具有开口顶部的可旋转模具（1），从而沿着模具的内周壁形成装有二氧化硅的层（3）。 层（3）被内部加热并熔化，同时用具有两个或多个孔（6,7）的盖（5）覆盖开口顶部，并且模具（1）通风以将高温气体排出孔（ 6,7）。