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公开(公告)号：US20240326401A1
公开(公告)日：2024-10-03
申请号：US18244444
申请日：2023-09-11
申请人： SK SILTRON CO., LTD.
发明人： Se Ah OH , Je Hyung SEO , Kee Yun HAN
IPC分类号： B32B43/00
CPC分类号： B32B43/006
摘要： Disclosed is a device for separating wafers sheet by sheet from ingot blocks having a plurality of sliced wafers bonded thereto. The wafer separation device includes a water tank configured to receive the ingot blocks and a liquid, a heating member configured to heat the liquid, a barrier rib provided in the water tank to isolate the ingot blocks from each other, an arm configured to separate the wafers sheet by sheet from the ingot blocks, and a sensor configured to sense the barrier rib.
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2.发明公开公开(公告)号：US20240304469A1
公开(公告)日：2024-09-12
申请号：US18273835
申请日：2021-02-16
申请人： SK SILTRON CO., LTD.
发明人： Gun Ho LEE , Chi Bok LEE , Dae Ki SEO , Byeong Ha KO
CPC分类号： H01L21/67051 , H01L21/0209
摘要： The present invention presents a single wafer-type wafer cleaning device and a single wafer-type method for controlling the surface roughness of a wafer, in which, in a wafer cleaning process, mutually different cleaning processes are carried out on the respective two sides of a wafer, and also, mutually different chemicals are used depending on the side of the wafer being cleaned, thereby enabling the respective roughness of the two sides to differ. The single wafer-type wafer cleaning device comprises a spin chamber, a first chemical supply device, a second chemical supply device and a third chemical supply device.
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公开(公告)号：US20240282566A1
公开(公告)日：2024-08-22
申请号：US18525048
申请日：2023-11-30
申请人： SK SILTRON CO., LTD.
发明人： Woo Young PARK
IPC分类号： H01J49/10
CPC分类号： H01J49/105
摘要： A method for analyzing metal contamination of a wafer comprises obtaining a contamination level of a first metal and a contamination level of a second metal for the wafer, obtaining a correction value by substituting the obtained contamination level of the second metal into a correlation equation, and obtaining a final contamination level of the first metal, by correcting the contamination level of the obtained first metal based on the correction value.
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公开(公告)号：US12043917B2
公开(公告)日：2024-07-23
申请号：US17424098
申请日：2020-01-20
申请人： SK SILTRON CO., LTD.
发明人： Hyun Woo Park
摘要： A single crystal ingot growth control device includes: an input unit that receives a diameter error that is a difference value between a measured diameter of the ingot and a target diameter; a calculation unit that performs integral calculation on the diameter error received by the input unit in real time and calculates a final pulling speed for each set time that is increased stepwise by reflecting the diameter error integral value, and an output unit that outputs the final pulling speed calculated by the calculation unit to a pulling controller during the set time.
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公开(公告)号：US20230314270A1
公开(公告)日：2023-10-05
申请号：US17752171
申请日：2022-05-24
申请人： SK Siltron Co., LTD.
发明人： Chang Rak KIM , Jin Ho Kang
IPC分类号： G01M3/36
CPC分类号： G01M3/363
摘要： Disclosed are a pin hole inspection apparatus and method for determining whether or not the vacuum-packed state of a Front Opening Shipping Box (FOSB) vacuum-packed with film paper is defective. The pin hole inspection apparatus includes a receiving unit configured such that the FOSB vacuum-packed with the film paper is received thereon and supported thereby, an adsorption unit vacuum-adsorbed onto a target part of the film paper, configured to surround the FOSB received on and supported by the receiving unit, so as to pull the film paper, a displacement measurement unit configured to measure a degree of swelling of the film paper pulled through the adsorption unit, and a processing unit configured to determine whether or not a pin hole is generated by comparing a measurement displacement value acquired through the displacement measurement unit with a pre-stored reference displacement value.
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公开(公告)号：US20230257903A1
公开(公告)日：2023-08-17
申请号：US17663602
申请日：2022-05-16
申请人： SK SILTRON CO., LTD.
发明人： Se Ri LEE , Seung Chul BACK
IPC分类号： C30B25/12 , C23C16/458
CPC分类号： C30B25/12 , C23C16/4583
摘要： According to an aspect of the present disclosure, there is provided a liner of an epitaxial reactor, including a lower body including an entrance stepped portion which is disposed on an upper end of one side of an outer side surface of the lower body and through which a source gas is introduced, a plurality of lower partitions disposed apart from each other on the entrance stepped portion, an upper body disposed on the lower body to face the lower body and including an entrance cover part forming a flow path which is interposed between the entrance stepped portion and the entrance cover part and through which the source gas is introduced, and a plurality of upper partitions disposed apart from each other on the entrance cover part, wherein the upper partitions are more densely disposed in both side portions than in a central portion of the entrance cover part.
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公开(公告)号：US20230154767A1
公开(公告)日：2023-05-18
申请号：US17917657
申请日：2020-08-13
申请人： SK SILTRON CO., LTD.
发明人： Ho Yong LEE , Sung Ho KIM , Jae Min SEOK
CPC分类号： H01L21/67051 , H01L21/02035 , B28D5/0082 , H01L2221/68386
摘要： The present invention provides an ASC process automation device including: a loading part into which an ingot having been subjected to a wire sawing is input; a kerosene cleaning part for cleaning the ingot with kerosene; a precleaning part for precleaning the ingot; a main cleaning part for cleaning the ingot multiple times; a wafer peeling part for peeling the ingot to produce multiple wafers; and a transport unit for moving the ingot linearly and upward/downward while proceeding to the kerosene cleaning part, the precleaning part, the main cleaning part, and the wafer peeling part.
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公开(公告)号：US20220018788A1
公开(公告)日：2022-01-20
申请号：US17069179
申请日：2020-10-13
申请人： SK Siltron Co., LTD.
发明人： Chung Hyun LEE
摘要： Disclosed is a method for analyzing a shape of a wafer. The method includes measuring external shapes of a plurality of wafers, detecting a first point having a maximum curvature in an edge region of each wafer from measured values acquired in the measuring the external shapes of the wafers, detecting a second point spaced apart from the first point in a direction towards an apex of a corresponding one of the wafers, measuring a first angle formed between a first line configured to connect the first point and the second point and a front side of the corresponding one of the wafers, forming a thin film layer on a surface of each wafer, measuring a thickness profile of the thin film layer, and confirming a wafer in which a maximum value of the thickness profile of the thin film layer is the smallest among the wafers.
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公开(公告)号：US11198207B2
公开(公告)日：2021-12-14
申请号：US16004722
申请日：2018-06-11
申请人： SK SILTRON CO., LTD.
发明人： Yong Choi
摘要： The present invention provides a wafer polishing apparatus, including: a surface plate having a polishing pad attached on an upper surface thereof; a slurry injection nozzle configured to inject slurry toward the polishing pad; at least one polishing head configured to accommodate a wafer and rotate at an upper portion of the surface plate; an index configured to support so as to connect the at least one polishing head at an upper portion thereof; and a particle suction part coupled to the index and configured to suck particles generated during polishing of the wafer.
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公开(公告)号：US20210372002A1
公开(公告)日：2021-12-02
申请号：US16959852
申请日：2019-01-18
申请人： SK SILTRON CO., LTD.
发明人： Jong Min KANG , II Soo CHOI
摘要： An embodiment provides a silicon single crystal growth method comprising the steps of: (a) allowing the shoulder of a single crystal to grow vertically; (b) allowing the shoulder to grow horizontally after the vertical growth; and (c) allowing the shoulder to grow in a downward convex shape after the horizontal growth of the shoulder, wherein the shoulder grows at a preset rate on the basis of the final diameter of the shoulder and the shoulder growth height according to steps (b) and (c).
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