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1.发明授权公开(公告)号：US10073064B2
公开(公告)日：2018-09-11
申请号：US14640287
申请日：2015-03-06
Applicant: CANON KABUSHIKI KAISHA
Inventor： Shinichiro Watanabe , Shinan Wang
CPC classification number: G01N29/2406 , B81C1/00095 , B81C2201/0195 , G01N29/2418 , G01N2291/028 , G01N2291/101
Abstract: According to a method for manufacturing a device in which an electrode of an element is electrically connected to a penetrating wire in a substrate, a structure is prepared in which the element is arranged on the first substrate having a through hole formed therein: and a second substrate is prepared which has an electroconductive seed layer formed thereon. Then, a wall part is formed on the first substrate; a seed layer is joined to a face on an element side of the structure through a bonding layer; the bonding layer is removed; and the seed layer is exposed in the inside of the opening. The inside of the wall part and the through hole is filled with a conductor, with the use of the seed layer through electrolytic plating.
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公开(公告)号：US09499395B2
公开(公告)日：2016-11-22
申请号：US15042931
申请日：2016-02-12
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC classification number: B81C1/00301 , B06B1/02 , B06B1/0292 , B81B7/007 , B81C1/00134 , B81C1/00158 , B81C1/00246 , B81C2201/0195 , B81C2203/0735 , B81C2203/0771 , G01N29/2406 , H01L29/84 , H04R19/005
Abstract: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
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3.发明申请COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME 有权补充金属氧化物半导体（CMOS）超声波传感器及其形成方法公开(公告)号：US20140264660A1
公开(公告)日：2014-09-18
申请号：US14208351
申请日：2014-03-13
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
IPC: B06B1/02
CPC classification number: B81C1/00301 , B06B1/02 , B06B1/0292 , B81B7/007 , B81C1/00134 , B81C1/00158 , B81C1/00246 , B81C2201/0195 , B81C2203/0735 , B81C2203/0771 , G01N29/2406 , H01L29/84 , H04R19/005
Abstract: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
Abstract translation: 描述了互补金属氧化物半导体（CMOS）超声波换能器（CUT）以及用于形成CUT的方法。 CUT可以包括用于与换能器连接的单体集成超声换能器和集成电路。 CUT可用于超声波装置，例如超声成像装置和/或高强度聚焦超声（HIFU）装置。
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公开(公告)号：US20180207922A1
公开(公告)日：2018-07-26
申请号：US15715267
申请日：2017-09-26
Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
Inventor： LI-NA ZHANG , XIAO-RUI ZHANG , XIAO-HUA GU , KAI-LI JIANG , SHOU-SHAN FAN
CPC classification number: B32B37/025 , B05D1/02 , B05D1/28 , B05D1/286 , B32B38/10 , B81B2203/0127 , B81C3/008 , B81C2201/0195 , B82Y40/00 , C01B32/194 , Y10S977/892
Abstract: A method of transferring nanomaterials with sugar, the method including: depositing a colloidal sugar layer on a first substrate; pressing a second substrate and a nanomaterial layer located on the second substrate on the colloidal sugar layer, wherein the nanomaterial layer is adhered to the colloidal sugar layer; solidifying the colloidal sugar layer into a solid sugar layer; tearing the second substrate; locating a fourth substrate on the nanomaterial layer; placing the first substrate, the solid sugar layer, the nanomaterial layer and the fourth substrate in a solvent, wherein the solid sugar layer is dissolved in the solvent, and the nanomaterial layer is detached from the first substrate and attached to the fourth substrate.
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5.发明申请COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME 有权补充金属氧化物半导体（CMOS）超声波传感器及其形成方法公开(公告)号：US20170029271A1
公开(公告)日：2017-02-02
申请号：US15291697
申请日：2016-10-12
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC classification number: B81C1/00301 , B06B1/02 , B06B1/0292 , B81B7/007 , B81C1/00134 , B81C1/00158 , B81C1/00246 , B81C2201/0195 , B81C2203/0735 , B81C2203/0771 , G01N29/2406 , H01L29/84 , H04R19/005
Abstract: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
Abstract translation: 描述了互补金属氧化物半导体（CMOS）超声波换能器（CUT）以及用于形成CUT的方法。 CUT可以包括用于与换能器连接的单体集成超声换能器和集成电路。 CUT可用于超声波装置，例如超声成像装置和/或高强度聚焦超声（HIFU）装置。
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Patent Agency Ranking
6.发明申请DEVICE HAVING ELEMENT ELECTRODE CONNECTED TO PENETRATING WIRE, AND METHOD FOR MANUFACTURING THE SAME 审中-公开具有连接到穿透线的元件电极的装置及其制造方法公开(公告)号：US20150263647A1
公开(公告)日：2015-09-17
申请号：US14640287
申请日：2015-03-06
Applicant: CANON KABUSHIKI KAISHA
Inventor： Shinichiro Watanabe , Shinan Wang
CPC classification number: G01N29/2406 , B81C1/00095 , B81C2201/0195 , G01N29/2418 , G01N2291/028 , G01N2291/101
Abstract: According to a method for manufacturing a device in which an electrode of an element is electrically connected to a penetrating wire in a substrate, a structure is prepared in which the element is arranged on the first substrate having a through hole formed therein: and a second substrate is prepared which has an electroconductive seed layer formed thereon. Then, a wall part is formed on the first substrate; a seed layer is joined to a face on an element side of the structure through a bonding layer; the bonding layer is removed; and the seed layer is exposed in the inside of the opening. The inside of the wall part and the through hole is filled with a conductor, with the use of the seed layer through electrolytic plating.
Abstract translation: 根据其中元件的电极与衬底中的穿透电线电连接的器件的制造方法，制备其中元件布置在其上形成有通孔的第一衬底上的结构：第二 制备其上形成有导电种子层的基底。 然后，在第一基板上形成壁部; 种子层通过接合层与结构的元件侧的面接合; 去除粘合层; 并且种子层在开口的内部暴露。 壁部分和通孔的内部填充有导体，使用种子层通过电解电镀。
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7.发明申请COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME 有权补充金属氧化物半导体（CMOS）超声波传感器及其形成方法公开(公告)号：US20150251896A1
公开(公告)日：2015-09-10
申请号：US14711145
申请日：2015-05-13
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
IPC: B81B7/00
CPC classification number: B81C1/00301 , B06B1/02 , B06B1/0292 , B81B7/007 , B81C1/00134 , B81C1/00158 , B81C1/00246 , B81C2201/0195 , B81C2203/0735 , B81C2203/0771 , G01N29/2406 , H01L29/84 , H04R19/005
Abstract: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
Abstract translation: 描述了互补金属氧化物半导体（CMOS）超声波换能器（CUT）以及用于形成CUT的方法。 CUT可以包括用于与换能器连接的单体集成超声换能器和集成电路。 CUT可用于超声波装置，例如超声成像装置和/或高强度聚焦超声（HIFU）装置。
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公开(公告)号：US20180257926A1
公开(公告)日：2018-09-13
申请号：US15723324
申请日：2017-10-03
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Paul S. ANDRY , Huan HU , Katsuyuki SAKUMA
CPC classification number: B81C1/0038 , B81B3/0097 , B81B2201/0292 , B81B2207/07 , B81C2201/0195 , H01L51/003 , H01L51/0097 , Y02E10/549
Abstract: Aspects include a method of manufacturing a flexible electronic structure that includes a metal or doped silicon substrate. Aspects include depositing an adhesive layer on the top side of the structure. Aspects also include depositing a release layer and a glass layer on the top side of the structure. Aspects also include reducing a thickness of the silicon substrate on the bottom side of the structure.
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公开(公告)号：US09822002B1
公开(公告)日：2017-11-21
申请号：US15262897
申请日：2016-09-12
Applicant: International Business Machines Corporation
Inventor： Paul S. Andry , Huan Hu , Katsuyuki Sakuma
CPC classification number: B81C1/0038 , B81B3/0097 , B81B2201/0292 , B81B2207/07 , B81C2201/0195 , H01L51/003 , H01L51/0097
Abstract: Aspects include a method of manufacturing a flexible electronic structure that includes a metal or doped silicon substrate. Aspects include depositing an adhesive layer on the top side of the structure. Aspects also include depositing a release layer and a glass layer on the top side of the structure. Aspects also include reducing a thickness of the silicon substrate on the bottom side of the structure.
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10.发明授权公开(公告)号：US09738514B2
公开(公告)日：2017-08-22
申请号：US15291697
申请日：2016-10-12
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC classification number: B81C1/00301 , B06B1/02 , B06B1/0292 , B81B7/007 , B81C1/00134 , B81C1/00158 , B81C1/00246 , B81C2201/0195 , B81C2203/0735 , B81C2203/0771 , G01N29/2406 , H01L29/84 , H04R19/005
Abstract: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
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