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公开(公告)号：US4911905A
公开(公告)日：1990-03-27
申请号：US315077
申请日：1989-02-24
Applicant: Donald F. Weirauch
Inventor： Donald F. Weirauch
CPC classification number: C22B9/02 , C01B19/007 , C01B19/02 , C22B17/06 , Y02P10/234
Abstract: The disclosure relates to a method of purifying cadmium and tellurium and forming pure, stoichiometric cadmium telluride therefrom as well as the apparatus for making such cadmium telluride. The cadmium and tellurium are purified by heating each separately to volatilization and passing water in a reducing gas through the volatilized cadmium and tellurium to react with impurities and form gases or precipitates. The cadmium and tellurium are volatilized at different predetermined temperatures such that the amount of each volatilized will be the same so that reaction later takes place with stoichiometric amounts of the elements to form the cadmium telluride. The cadmium telluride is then condensed at low enough temperature so that the remaining gases pass out of the system.
Abstract translation: 本公开涉及一种净化镉和碲并从其形成纯的化学计量的碲化镉的方法以及用于制造这种碲化镉的装置。 镉和碲通过分别加热而分别进行纯化，使挥发和还原气体中的水通过挥发的镉和碲与杂质反应并形成气体或沉淀物。 镉和碲在不同的预定温度下挥发，使得每个挥发的量将相同，以便稍后用化学计量的元素进行反应以形成碲化镉。 然后将碲化镉在足够低的温度下冷凝，使剩余的气体从系统中排出。
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公开(公告)号：US06805833B2
公开(公告)日：2004-10-19
申请号：US10336498
申请日：2003-01-02
Applicant: Kishio Tayama , Toshiaki Hodozuka
Inventor： Kishio Tayama , Toshiaki Hodozuka
IPC: C21C710
CPC classification number: C22B17/06 , C22B9/02 , C22B9/04 , C22B19/16 , C22B19/18 , C22B58/00 , Y02P10/234 , Y10S266/905
Abstract: A 99.99% pure indium feed is charged into crucible 8 and heated to 1250° C. by upper heater 6 in a vacuum atmosphere at 1×10−4 Torr, whereupon indium evaporates, condenses on the inner surfaces of inner tube 3 and drips to be recovered into liquid reservoir 9 in the lower part of tubular member 11 whereas impurity elements having lower vapor pressure than indium stay within crucible 8. The recovered indium mass in liquid reservoir 9 is heated to 1100° C. by lower heater 7 and the resulting vapors of impurity elements having higher vapor pressure than indium pass through diffuser plates 12 in the upper part of tubular member 11 to be discharged from the system whereas the indium vapor recondenses upon contact with diffuser plates 12 and returns to liquid reservoir 9, yielding 99.9999% pure indium while preventing the loss of indium.
Abstract translation: 将99.99％的纯铟进料装入坩埚8中，并在1×10 -4乇的真空气氛中由上部加热器6加热至1250℃，由此铟蒸发，在内管3的内表面上冷凝并滴至 被回收到管状构件11的下部的液体储存器9中，而具有比铟低的蒸汽压的杂质元素保持在坩埚8内。液体储存器9中的回收的铟质量被下加热器7加热到1100℃， 具有比铟更高的蒸气压的杂质元素的蒸汽通过管状部件11上部的扩散板12，以便从系统中排出，而铟蒸汽在与扩散板12接触时重新发生并返回到液体储存器9，产生99.9999％ 纯铟，同时防止铟的损失。
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公开(公告)号：US4077799A
公开(公告)日：1978-03-07
申请号：US747301
申请日：1976-12-03
Applicant: Hans Wilhelm Wieking , Karl Ehlers
Inventor： Hans Wilhelm Wieking , Karl Ehlers
CPC classification number: C22B17/06 , C22B9/02 , C22B9/04 , Y02P10/234
Abstract: A method of refining crude cadmium by vacuum distillation in which crude cadmium is passed into a reflux condenser in which higher boiling point impurities are condensed together with a portion of pure cadmium vapor, this condensate flowing in counterflow with the crude cadmium vapor. The remaining portion of the pure cadmium vapor is subsequently condensed. The apparatus comprises an inverted U-shaped vacuum chamber having an evaporator and a reflux condenser in one leg and a further condenser in the other leg. A feed pipe for liquid crude cadmium enters the one leg adjacent the evaporator and a residue outlet pipe leaves the one leg, the feed pipe and the residue pipe being arranged so that no back-flow takes place from the residue pipe to the feed pipe. An outlet pipe for the refined cadmium issues from the other leg of the vacuum chamber.
Abstract translation: 通过真空蒸馏精制粗镉的方法，其中粗镉进入回流冷凝器，其中较高沸点的杂质与纯镉蒸汽一起冷凝在一起，该冷凝物与粗镉蒸气逆流流动。 纯镉蒸气的剩余部分随后冷凝。 该装置包括倒置的U形真空室，其具有一个蒸发器和一个回路中的回流冷凝器，另一个支腿具有另外的冷凝器。 用于液体粗镉的进料管进入蒸发器附近的一条腿，残渣出口管离开一条腿，进料管和残余管被布置成使得不会从残留管到进料管发生回流。 用于真空室另一条腿的精细镉问题的出口管。
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Patent Agency Ranking
公开(公告)号：US20040083854A1
公开(公告)日：2004-05-06
申请号：US10613545
申请日：2003-07-02
Applicant: DOWA MINING CO., LTD.
Inventor： Kishio Tayama , Toshiaki Hodozuka
IPC: C22B026/22 , C22B058/00 , C22B017/06 , C22B019/16
CPC classification number: C22B19/16 , C22B9/04 , C22B17/06 , C22B58/00 , Y10S266/905
Abstract: A 99.99% pure indium feed is charged into a crucible and heated to 1250 null C. by an upper heater in a vacuum atmosphere at 1null10null4 Torr, whereupon indium evaporates, condenses on the inner surfaces of an inner tube and drips to be recovered into a liquid reservoir in the lower part of a tubular member, whereas impurity elements having a lower vapor pressure than indium stay within the crucible. The recovered indium mass in the liquid reservoir is heated to 1100null C. by a lower heater and the resulting vapors of impurity elements having a higher vapor pressure than indium pass through diffuser plates in an upper part of the tubular member to be discharged from the system, whereas the indium vapor recondenses upon contact with the diffuser plates and returns to the liquid reservoir, yielding 99.9999% pure indium, while preventing the loss of indium.
Abstract translation: 将99.99％的纯铟进料装入坩埚中，并通过上加热器在1×10 -4乇的真空气氛中加热至1250℃，随后铟蒸发，在内管的内表面冷凝并滴至 被回收到管状部件的下部的液体储存器中，而具有比铟低的蒸气压的杂质元素保留在坩埚内。 通过下部加热器将液体储存器中回收的铟质量加热至1100℃，并且所得到的蒸气压高于铟的杂质元素的蒸气通过管状部件上部的扩散板，从而从 系统，而铟蒸汽在与扩散板接触并重新回到液体储存器时重新产生，产生99.9999％的纯铟，同时防止铟的损失。
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公开(公告)号：US20030150293A1
公开(公告)日：2003-08-14
申请号：US10336498
申请日：2003-01-02
Applicant: DOWA MINING CO., LTD.
Inventor： Kishio Tayama , Toshiaki Hodozuka
IPC: C22B005/16 , C22B058/00
CPC classification number: C22B17/06 , C22B9/02 , C22B9/04 , C22B19/16 , C22B19/18 , C22B58/00 , Y02P10/234 , Y10S266/905
Abstract: A 99.99% pure indium feed is charged into crucible 8 and heated to 1250null C. by upper heater 6 in a vacuum atmosphere at 1null10null4 Torr, whereupon indium evaporates, condenses on the inner surfaces of inner tube 3 and drips to be recovered into liquid reservoir 9 in the lower part of tubular member 11 whereas impurity elements having lower vapor pressure than indium stay within crucible 8. The recovered indium mass in liquid reservoir 9 is heated to 1100null C. by lower heater 7 and the resulting vapors of impurity elements having higher vapor pressure than indium pass through diffuser plates 12 in the upper part of tubular member 11 to be discharged from the system whereas the indium vapor recondenses upon contact with diffuser plates 12 and returns to liquid reservoir 9, yielding 99.9999% pure indium while preventing the loss of indium.
Abstract translation: 将99.99％的纯铟进料装入坩埚8中，并通过上加热器6在1×10 -4乇的真空气氛中加热至1250℃，由此铟蒸发，在内管3的内表面上冷凝并滴入以回收 液体储存器9在管状构件11的下部，而具有比铟低的蒸汽压的杂质元素保持在坩埚8内。液体储存器9中回收的铟质量被下部加热器7加热至1100℃，并且所得到的杂质元素蒸气 具有比铟更高的蒸气压通过管状构件11的上部的扩散板12以从系统排出，而铟蒸汽在与扩散板12接触时重新发生并返回到液体储存器9，产生99.9999％的纯铟，同时防止 铟的损失
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9.发明申请公开(公告)号：US20030145683A1
公开(公告)日：2003-08-07
申请号：US10060580
申请日：2002-01-30
Applicant: DOWA MINING CO., LTD.
Inventor： Kishio Tayama , Toshiaki Hodozuka
IPC: C22B005/16
CPC classification number: C22B17/06 , C22B9/02 , C22B9/04 , C22B19/16 , C22B19/18 , C22B58/00 , Y02P10/234 , Y10S266/905
Abstract: A 99.99% pure indium feed is charged into crucible 8 and heated to 1250null C. by upper heater 6 in a vacuum atmosphere at 1null10null4 Torr, whereupon indium evaporates, condenses on the inner surfaces of inner tube 3 and drips to be recovered into liquid reservoir 9 in the lower part of tubular member 11 whereas impurity elements having lower vapor pressure than indium stay within crucible 8. The recovered indium mass in liquid reservoir 9 is heated to 1100null C. by lower heater 7 and the resulting vapors of impurity elements having higher vapor pressure than indium pass through diffuser plates 12 in the upper part of tubular member 11 to be discharged from the system whereas the indium vapor recondenses upon contact with diffuser plates 12 and returns to liquid reservoir 9, yielding 99.9999% pure indium while preventing the loss of indium.
Abstract translation: 将99.99％的纯铟进料装入坩埚8中，并通过上加热器6在1×10 -4乇的真空气氛中加热至1250℃，由此铟蒸发，在内管3的内表面上冷凝并滴入以回收 液体储存器9在管状构件11的下部，而具有比铟低的蒸汽压的杂质元素保持在坩埚8内。液体储存器9中回收的铟质量被下部加热器7加热至1100℃，并且所得到的杂质元素蒸气 具有比铟更高的蒸气压通过管状构件11的上部的扩散板12以从系统排出，而铟蒸汽在与扩散板12接触时重新发生并返回到液体储存器9，产生99.9999％的纯铟，同时防止 铟的损失
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10.发明授权公开(公告)号：US06514457B1
公开(公告)日：2003-02-04
申请号：US09771396
申请日：2001-01-25
Applicant: David R. Rhiger , Sanghamitra Sen
Inventor： David R. Rhiger , Sanghamitra Sen
IPC: C21B700
Abstract: Impurities are extracted from a thin-film device structure based on mercury, cadmium, zinc, and/or tellurium, such as HgCdTe, CdTe, CdZnTe, or HgCdZnTe. The impurities are extracted by furnishing a sink medium comprising molten bismuth, and contacting the contaminated structure to the sink medium for a period of time sufficiently long that impurities diffuse out of the structure and into the bismuth for removal. The molten bismuth may additionally contain small amounts of one or more of the major components of the structure (mercury, cadmium, zinc, and/or tellurium) to inhibit loss of these elements from the structure.
Abstract translation: 杂质从基于汞，镉，锌和/或碲的薄膜器件结构提取，例如HgCdTe，CdTe，CdZnTe或HgCdZnTe。 通过提供包含熔融铋的水槽介质来提取杂质，并使被污染的结构与水槽介质接触一段足够长的时间，使得杂质从结构中扩散到铋中以除去。 熔融的铋还可以含有少量的一种或多种结构的主要组分（汞，镉，锌和/或碲），以抑制这些元素从结构中的损失。
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