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    Method of forming stoichiometric II-VI compounds of high purity
    2.
    发明授权
    Method of forming stoichiometric II-VI compounds of high purity 失效
    形成高纯度化学计量II-VI化合物的方法

    公开(公告)号：US4911905A

    公开(公告)日：1990-03-27

    申请号：US315077

    申请日：1989-02-24

    Applicant: Donald F. Weirauch

    Inventor： Donald F. Weirauch

    IPC: C01B19/00 ,  C01B19/02 ,  C22B9/02 ,  C22B17/06

    CPC classification number: C22B9/02 ,  C01B19/007 ,  C01B19/02 ,  C22B17/06 ,  Y02P10/234

    Abstract: The disclosure relates to a method of purifying cadmium and tellurium and forming pure, stoichiometric cadmium telluride therefrom as well as the apparatus for making such cadmium telluride. The cadmium and tellurium are purified by heating each separately to volatilization and passing water in a reducing gas through the volatilized cadmium and tellurium to react with impurities and form gases or precipitates. The cadmium and tellurium are volatilized at different predetermined temperatures such that the amount of each volatilized will be the same so that reaction later takes place with stoichiometric amounts of the elements to form the cadmium telluride. The cadmium telluride is then condensed at low enough temperature so that the remaining gases pass out of the system.

    Abstract translation: 本公开涉及一种净化镉和碲并从其形成纯的化学计量的碲化镉的方法以及用于制造这种碲化镉的装置。 镉和碲通过分别加热而分别进行纯化，使挥发和还原气体中的水通过挥发的镉和碲与杂质反应并形成气体或沉淀物。 镉和碲在不同的预定温度下挥发，使得每个挥发的量将相同，以便稍后用化学计量的元素进行反应以形成碲化镉。 然后将碲化镉在足够低的温度下冷凝，使剩余的气体从系统中排出。

    Method and apparatus of refining crude cadmium
    4.
    发明授权
    Method and apparatus of refining crude cadmium 失效
    粗镉精炼方法及装置

    公开(公告)号：US4077799A

    公开(公告)日：1978-03-07

    申请号：US747301

    申请日：1976-12-03

    Applicant: Hans Wilhelm Wieking ,  Karl Ehlers

    Inventor： Hans Wilhelm Wieking ,  Karl Ehlers

    IPC: C22B9/02 ,  C22B9/04 ,  C22B17/06 ,  C22B17/00

    CPC classification number: C22B17/06 ,  C22B9/02 ,  C22B9/04 ,  Y02P10/234

    Abstract: A method of refining crude cadmium by vacuum distillation in which crude cadmium is passed into a reflux condenser in which higher boiling point impurities are condensed together with a portion of pure cadmium vapor, this condensate flowing in counterflow with the crude cadmium vapor. The remaining portion of the pure cadmium vapor is subsequently condensed. The apparatus comprises an inverted U-shaped vacuum chamber having an evaporator and a reflux condenser in one leg and a further condenser in the other leg. A feed pipe for liquid crude cadmium enters the one leg adjacent the evaporator and a residue outlet pipe leaves the one leg, the feed pipe and the residue pipe being arranged so that no back-flow takes place from the residue pipe to the feed pipe. An outlet pipe for the refined cadmium issues from the other leg of the vacuum chamber.

    Abstract translation: 通过真空蒸馏精制粗镉的方法，其中粗镉进入回流冷凝器，其中较高沸点的杂质与纯镉蒸汽一起冷凝在一起，该冷凝物与粗镉蒸气逆流流动。 纯镉蒸气的剩余部分随后冷凝。 该装置包括倒置的U形真空室，其具有一个蒸发器和一个回路中的回流冷凝器，另一个支腿具有另外的冷凝器。 用于液体粗镉的进料管进入蒸发器附近的一条腿，残渣出口管离开一条腿，进料管和残余管被布置成使得不会从残留管到进料管发生回流。 用于真空室另一条腿的精细镉问题的出口管。

    Method and apparatus for enhanced purification of high-purity metals
    10.
    发明授权
    Method and apparatus for enhanced purification of high-purity metals 有权
    用于增强高纯度金属纯化的方法和装置

    公开(公告)号：US06932852B2

    公开(公告)日：2005-08-23

    申请号：US10613545

    申请日：2003-07-02

    Applicant: Kishio Tayama ,  Toshiaki Hodozuka

    Inventor： Kishio Tayama ,  Toshiaki Hodozuka

    IPC: C22B9/04 ,  C22B17/06 ,  C22B19/16 ,  C22B58/00 ,  C21C7/10

    CPC classification number: C22B19/16 ,  C22B9/04 ,  C22B17/06 ,  C22B58/00 ,  Y10S266/905

    Abstract: A 99.99% pure indium feed is charged into a crucible and heated to 1250 ° C. by an upper heater in a vacuum atmosphere at 1×10−4 Torr, whereupon indium evaporates, condenses on the inner surfaces of an inner tube and drips to be recovered into a liquid reservoir in the lower part of a tubular member, whereas impurity elements having a lower vapor pressure than indium stay within the crucible. The recovered indium mass in the liquid reservoir is heated to 1100° C. by a lower heater and the resulting vapors of impurity elements having a higher vapor pressure than indium pass through diffuser plates in an upper part of the tubular member to be discharged from the system, whereas the indium vapor recondenses upon contact with the diffuser plates and returns to the liquid reservoir, yielding 99.9999% pure indium, while preventing the loss of indium.

    Abstract translation: 将99.99％的纯铟进料装入坩埚中，并通过上加热器在1×10 -4乇的真空气氛中加热至1250℃，随后铟蒸发，在其内表面上冷凝 内管和滴液回收到管状部件的下部的液体储存器中，而具有比铟低的蒸气压的杂质元素保持在坩埚内。 通过下部加热器将液体储存器中回收的铟质量加热至1100℃，并且所得到的蒸气压高于铟的杂质元素的蒸气通过管状部件上部的扩散板，从而从 系统，而铟蒸汽在与扩散板接触并重新回到液体储存器时重新产生，产生99.9999％的纯铟，同时防止铟的损失。

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