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    STRENGTHENING BY MACHINING
    1.
    发明申请
    STRENGTHENING BY MACHINING 有权
    加强加工

    公开(公告)号：US20130075119A1

    公开(公告)日：2013-03-28

    申请号：US13243655

    申请日：2011-09-23

    申请人： Changsheng Guo

    发明人： Changsheng Guo

    IPC分类号： B26D1/00

    CPC分类号： B23Q15/12 ,  B23Q11/1053 ,  G05B19/404 ,  G05B2219/49057 ,  G05B2219/49073 ,  G05B2219/49075 ,  G05B2219/49088

    摘要： A machining method comprises selecting a finished surface dimension and a material property for a working surface, defining a working temperature range based on the selected material property, and defining a machining power based on the working temperature range. The machining power depends on a removal rate and a specific heat of the working surface. The working surface is machined at the removal rate to achieve the finished surface dimension, and the machine power is controlled to maintain the working surface within the working temperature range. The working surface is heated or cooled from the working temperature range to a transition temperature range, such that the selected material property is preserved in the working surface.

    摘要翻译： 一种加工方法，包括选择工作表面的成品表面尺寸和材料特性，基于所选择的材料特性确定工作温度范围，并根据工作温度范围限定加工功率。 加工功率取决于工作表面的去除速率和比热。 以去除速度加工工作面，达到成品表面尺寸，控制机器功率，将工作面保持在工作温度范围内。 将工作表面从工作温度范围加热或冷却至转变温度范围，使得所选择的材料性质被保留在工作表面中。

    System and method for real-time control of semiconductor a wafer polishing, and a polishing head
    10.
    发明授权
    System and method for real-time control of semiconductor a wafer polishing, and a polishing head 失效
    用于半导体晶片抛光的实时控制的系统和方法以及抛光头

    公开(公告)号：US5486129A

    公开(公告)日：1996-01-23

    申请号：US112759

    申请日：1993-08-25

    申请人： Gurtej S. Sandhu ,  Trung T. Doan

    发明人： Gurtej S. Sandhu ,  Trung T. Doan

    IPC分类号： B23Q15/013 ,  B23Q15/12 ,  B24B13/015 ,  B24B37/013 ,  B24B37/12 ,  B24B37/20 ,  B24B49/02 ,  B24B49/04 ,  B24B49/10 ,  B24B49/12 ,  B24B49/14 ,  B24B57/02 ,  G05B19/404 ,  B24B49/00

    CPC分类号： B24B37/205 ,  B23Q15/013 ,  B23Q15/12 ,  B24B13/015 ,  B24B37/013 ,  B24B37/12 ,  B24B49/12 ,  G05B19/404 ,  G05B2219/34403 ,  G05B2219/37398 ,  G05B2219/37602 ,  G05B2219/45199 ,  G05B2219/45232 ,  G05B2219/49052 ,  G05B2219/49057

    摘要： A system for polishing a semiconductor wafer includes a rotatable platen subassembly and a drive mechanism coupled to rotate the platen subassembly at a platen velocity. A polishing head supports and holds a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face whereby individual regions of the wafer face have different polishing rates. The polishing head includes pressure applicators for applying various localized pressures on the individual regions of the semiconductor wafer to conform the wafer face to a selected contour. The system also includes a polish control subsystem for monitoring in situ the polishing rates at various regions of the semiconductor wafer. The polish control subsystem adjusts in situ the platen velocity and/or the individual localized pressures applied to the semiconductor wafer to change the polishing rates of the individual regions of the semiconductor wafer. The system can also be adapted to change other operational parameters, such as wafer velocity, wafer polishing path across the platen, slurry composition and flow rate (for CMP processes), and force applied to the wafer when contacting the platen. A method for polishing a semiconductor wafer is also described.

    摘要翻译： 用于抛光半导体晶片的系统包括可旋转压板子组件和联接成以压板速度旋转压板子组件的驱动机构。 抛光头支撑并保持与压板子组件接触的半导体晶片的表面以抛光晶片表面，从而晶片表面的各个区域具有不同的抛光速率。 抛光头包括用于在半导体晶片的各个区域上施加各种局部压力的压力施加器，以使晶片面与选定的轮廓一致。 该系统还包括一个抛光控制子系统，用于原位监测半导体晶片各个区域的抛光速率。 抛光控制子系统原位调整压板速度和/或施加到半导体晶片的各个局部压力，以改变半导体晶片的各个区域的抛光速率。 该系统还可以适于改变其他操作参数，例如晶圆速度，横跨压板的晶片抛光路径，浆料组成和流速（对于CMP工艺），以及当接触压板时施加到晶片上的力。 还描述了用于抛光半导体晶片的方法。