Structure and Method of Fabricating a CZTS Photovoltaic Device by Electrodeposition
    2.
    发明申请
    Structure and Method of Fabricating a CZTS Photovoltaic Device by Electrodeposition 有权
    通过电沉积制造CZTS光伏器件的结构和方法

    公开(公告)号:US20120061790A1

    公开(公告)日:2012-03-15

    申请号:US12878746

    申请日:2010-09-09

    IPC分类号: H01L31/032 H01L31/18

    摘要: Techniques for using electrodeposition to form absorber layers in diodes (e.g., solar cells) are provided. In one aspect, a method for fabricating a diode is provided. The method includes the following steps. A substrate is provided. A backside electrode is formed on the substrate. One or more layers are electrodeposited on the backside electrode, wherein at least one of the layers comprises copper, at least one of the layers comprises zinc and at least one of the layers comprises tin. The layers are annealed in an environment containing a sulfur source to form a p-type CZTS absorber layer on the backside electrode. An n-type semiconductor layer is formed on the CZTS absorber layer. A transparent conductive layer is formed on the n-type semiconductor layer. A diode is also provided.

    摘要翻译: 提供了使用电沉积在二极管(如太阳能电池)中形成吸收层的技术。 在一个方面,提供了制造二极管的方法。 该方法包括以下步骤。 提供基板。 在基板上形成背面电极。 一个或多个层电沉积在背面电极上,其中至少一个层包含铜,至少一个层包含锌,并且至少一层包括锡。 这些层在包含硫源的环境中退火,以在背面电极上形成p型CZTS吸收层。 在CZTS吸收层上形成n型半导体层。 在n型半导体层上形成透明导电层。 还提供二极管。

    Structure and Method of Fabricating a CZTS Photovoltaic Device by Electrodeposition
    4.
    发明申请
    Structure and Method of Fabricating a CZTS Photovoltaic Device by Electrodeposition 有权
    通过电沉积制造CZTS光伏器件的结构和方法

    公开(公告)号:US20140252530A1

    公开(公告)日:2014-09-11

    申请号:US14286560

    申请日:2014-05-23

    IPC分类号: H01L31/18 H01L31/032

    摘要: Techniques for using electrodeposition to form absorber layers in diodes (e.g., solar cells) are provided. In one aspect, a method for fabricating a diode is provided. The method includes the following steps. A substrate is provided. A backside electrode is formed on the substrate. One or more layers are electrodeposited on the backside electrode, wherein at least one of the layers comprises copper, at least one of the layers comprises zinc and at least one of the layers comprises tin. The layers are annealed in an environment containing a sulfur source to form a p-type CZTS absorber layer on the backside electrode. An n-type semiconductor layer is formed on the CZTS absorber layer. A transparent conductive layer is formed on the n-type semiconductor layer. A diode is also provided.

    摘要翻译: 提供了使用电沉积在二极管(如太阳能电池)中形成吸收层的技术。 一方面,提供一种制造二极管的方法。 该方法包括以下步骤。 提供基板。 在基板上形成背面电极。 一个或多个层电沉积在背面电极上,其中至少一个层包含铜,至少一个层包含锌,并且至少一层包括锡。 这些层在包含硫源的环境中退火,以在背面电极上形成p型CZTS吸收层。 在CZTS吸收层上形成n型半导体层。 在n型半导体层上形成透明导电层。 还提供二极管。

    Structure and method of fabricating a CZTS photovoltaic device by electrodeposition
    5.
    发明授权
    Structure and method of fabricating a CZTS photovoltaic device by electrodeposition 有权
    通过电沉积制造CZTS光伏器件的结构和方法

    公开(公告)号:US08790956B2

    公开(公告)日:2014-07-29

    申请号:US13712225

    申请日:2012-12-12

    IPC分类号: H01L31/0272

    摘要: Techniques for using electrodeposition to form absorber layers in diodes (e.g., solar cells) are provided. In one aspect, a method for fabricating a diode is provided. The method includes the following steps. A substrate is provided. A backside electrode is formed on the substrate. One or more layers are electrodeposited on the backside electrode, wherein at least one of the layers comprises copper, at least one of the layers comprises zinc and at least one of the layers comprises tin. The layers are annealed in an environment containing a sulfur source to form a p-type CZTS absorber layer on the backside electrode. An n-type semiconductor layer is formed on the CZTS absorber layer. A transparent conductive layer is formed on the n-type semiconductor layer. A diode is also provided.

    摘要翻译: 提供了使用电沉积在二极管(如太阳能电池)中形成吸收层的技术。 一方面,提供一种制造二极管的方法。 该方法包括以下步骤。 提供基板。 在基板上形成背面电极。 一个或多个层电沉积在背面电极上,其中至少一个层包含铜,至少一个层包含锌,并且至少一层包括锡。 这些层在包含硫源的环境中退火,以在背面电极上形成p型CZTS吸收层。 在CZTS吸收层上形成n型半导体层。 在n型半导体层上形成透明导电层。 还提供二极管。

    Structure and Method of Fabricating a CZTS Photovoltaic Device by Electrodeposition
    6.
    发明申请
    Structure and Method of Fabricating a CZTS Photovoltaic Device by Electrodeposition 有权
    通过电沉积制造CZTS光伏器件的结构和方法

    公开(公告)号:US20130125977A1

    公开(公告)日:2013-05-23

    申请号:US13712225

    申请日:2012-12-12

    IPC分类号: H01L31/18 H01L31/0224

    摘要: Techniques for using electrodeposition to form absorber layers in diodes (e.g., solar cells) are provided. In one aspect, a method for fabricating a diode is provided. The method includes the following steps. A substrate is provided. A backside electrode is formed on the substrate. One or more layers are electrodeposited on the backside electrode, wherein at least one of the layers comprises copper, at least one of the layers comprises zinc and at least one of the layers comprises tin. The layers are annealed in an environment containing a sulfur source to form a p-type CZTS absorber layer on the backside electrode. An n-type semiconductor layer is formed on the CZTS absorber layer. A transparent conductive layer is formed on the n-type semiconductor layer. A diode is also provided.

    摘要翻译: 提供了使用电沉积在二极管(如太阳能电池)中形成吸收层的技术。 一方面,提供一种制造二极管的方法。 该方法包括以下步骤。 提供基板。 在基板上形成背面电极。 一个或多个层电沉积在背面电极上,其中至少一个层包含铜,至少一个层包含锌,并且至少一层包括锡。 这些层在包含硫源的环境中退火,以在背面电极上形成p型CZTS吸收层。 在CZTS吸收层上形成n型半导体层。 在n型半导体层上形成透明导电层。 还提供二极管。