W-Band waveguide variable controlled oscillator
    1.
    发明授权
    W-Band waveguide variable controlled oscillator 失效
    W波段波导可变控制振荡器

    公开(公告)号:US5126696A

    公开(公告)日:1992-06-30

    申请号:US744051

    申请日:1991-08-12

    IPC分类号: H03B1/00 H03B7/08 H03B9/14

    摘要: A W-band waveguide variable controlled oscillator incorporating a capacitively coupled Gunn diode and varactor diode arranged in such a manner that adverse environmental conditions do not deleteriously effect the stability of the output of the oscillator. The Gunn diode is electrically connected to a waveguide chamber within the oscillator and includes a resonator electrically connected to its end cap. The resonator is electrically connected to a DC bias source by means of a DC bias filter and a wire inductor. Opposite and above the Gunn diode is a varactor assembly including a varactor diode, which is also electrically connected to a DC bias source through a DC bias filter. A variable coupling spacer within the varactor assembly adjusts the distance between the varactor diode and the Gunn diode such that the capacitive coupling between the two can be adjusted. In addition, an adjustable back-short is incorporated within the waveguide channel to adjust the power output of the oscillator. Also, a fine tuning screw is threadably engaged to the waveguide channel to adjust the capacitance of the resonator. This configuration enables the oscillator to have a stable output and low power losses under adverse environmental conditions.

    摘要翻译: 一种W波段波导可变控制振荡器,其包含电容耦合的耿氏二极管和变容二极管,其排列方式使得不利的环境条件不会有害地影响振荡器输出的稳定性。 耿氏二极管电连接到振荡器内的波导室,并且包括电连接到其端盖的谐振器。 谐振器通过DC偏置滤波器和线电感器电连接到DC偏置源。 耿氏二极管的相对和上方是包括变容二极管的变容二极管,变容二极管也通过直流偏置滤波器电连接到直流偏压源。 可变电抗器组件内的可变耦合间隔件调整变容二极管和耿氏二极管之间的距离,使得可以调节两者之间的电容耦合。 此外,在波导通道内并入可调节的反向短路,以调整振荡器的功率输出。 此外,微调螺丝螺纹地接合到波导通道以调节谐振器的电容。 该配置使得振荡器在不利的环境条件下具有稳定的输出和低功率损耗。

    High frequency transmitter
    2.
    发明授权
    High frequency transmitter 失效
    高频变送器

    公开(公告)号:US4228539A

    公开(公告)日:1980-10-14

    申请号:US973797

    申请日:1978-12-28

    申请人: Reijo Hamalainen

    发明人: Reijo Hamalainen

    摘要: The components of a transistor oscillator are mounted on an end cap rotatably mounted on the outer tube of a cavity resonator which stabilizes the oscillator. The intensity with which a high frequency is applied to the cavity resonator is adjustable by rotation of the end cap.

    摘要翻译: 晶体管振荡器的组件安装在可旋转地安装在腔谐振器的外管上的端盖上,该谐振腔稳定振荡器。 高频施加到空腔谐振器的强度可通过端盖的旋转来调节。

    Q switching microwave oscillator
    3.
    发明授权
    Q switching microwave oscillator 失效
    Q开关微波振荡器

    公开(公告)号:US4053854A

    公开(公告)日:1977-10-11

    申请号:US693824

    申请日:1976-06-07

    IPC分类号: H03B9/12 H03B1/00 H03B7/14

    CPC分类号: H03B7/14 H03B2201/015

    摘要: A housing defining a first cavity forming a transmission line and a negative impedance semiconductor device terminating one end of the transmission line in a negative impedance, the housing further defining a second cavity resonant at a predetermined frequency and a means of electromagnetically coupling between the transmission line and the second cavity to couple energy therebetween, a reactive element formed between said negative impedance semiconductor device and the housing to provide a shunt susceptance to parallel resonate with the susceptance of the semiconductor device at the desired frequency and bias, and load isolator connected to the opposite end of the transmission line for transmitting RF output pulses to the RF load and for applying a DC bias thereto normally at a first level and periodically reduced to a second level for a short duration, said semiconductor device operating as a series resonant circuit with the DC bias at the first level to cause energy to be stored in the resonant cavity and operating in parallel resonance with the reactive element when the DC bias is at the second level to lower the Q of the resonant cavity and allow energy to flow from the resonant cavity to the RF load in a short duration, high peak power pulse.

    摘要翻译: 限定形成传输线的第一空腔的壳体和以负阻抗端接所述传输线的一端的负阻抗半导体器件,所述壳体进一步限定以预定频率谐振的第二腔和在所述传输线之间电磁耦合的装置 以及第二腔,以在其间耦合能量;在所述负阻抗半导体器件和所述壳体之间形成的电抗元件,以提供并联电纳以在期望的频率和偏压下与所述半导体器件的电纳并联谐振;以及负载隔离器, 传输线的相对端,用于将RF输出脉冲发送到RF负载并且用于在第一电平处正常施加DC偏压,并且在短时间内周期性地减小到第二电平,所述半导体器件用作串联谐振电路 DC偏压在第一级,以产生能量储存 谐振腔并且当DC偏压处于第二电平时与电抗元件并联谐振,以降低谐振腔的Q,并允许能量在短时间内从谐振腔流到RF负载,高峰值功率 脉冲。

    Broadband temperature compensated microwave cavity oscillator
    5.
    发明授权
    Broadband temperature compensated microwave cavity oscillator 失效
    宽带温度补偿微波腔振荡器

    公开(公告)号:US4766398A

    公开(公告)日:1988-08-23

    申请号:US44186

    申请日:1987-04-30

    摘要: This microwave oscillator in one embodiment has two tuning rods (16 and 18) configured to extend within a resonant cavity (12). One of these tuning rods (18) attaches to a shaft (19) that is affixed at one end and that is comprised of a material having a thermal coefficient of expansion that is different from the material comprising the housing (11) that forms the cavity (12). As a result, movement of the tuning rods (16 and 18) will vary as temperature varies, with a resulting stability in the frequency of oscillation.

    摘要翻译: 在一个实施例中,该微波振荡器具有被配置为在谐振腔(12)内延伸的两个调谐杆(16和18)。 这些调音杆(18)中的一个附接到轴(19),该轴(19)固定在一端,并且由具有与包括形成空腔的壳体(11)的材料不同的热膨胀系数的材料组成 (12)。 结果,调节杆(16和18)的移动将随温度变化而变化,从而产生振荡频率的稳定性。

    Circuit arrangement for generating and stably amplifying broadband rf
signals
    6.
    发明授权
    Circuit arrangement for generating and stably amplifying broadband rf signals 失效
    用于产生和稳定放大宽带rf信号的电路布置

    公开(公告)号:US4270099A

    公开(公告)日:1981-05-26

    申请号:US49158

    申请日:1979-06-18

    摘要: A circuit arrangement for generating and stably amplifying broadband rf signals. The circuit arrangement includes a first rectangular waveguide designed for operation in a frequency range below its cutoff frequency and a second rectangular waveguide for operation at the operating frequency. An active semiconductor element is disposed in the first rectangular waveguide and a direct voltage is supplied to the semiconductor element. At least one waveguide section is provided for connecting the first and second rectangular waveguides and has the same width as the second rectangular waveguide and a height less than the second rectangular waveguide. The waveguide section matches the cross section of the first rectangular waveguide to the cross section of the second rectangular waveguide. A plurality of tuning devices are disposed in the first rectangular waveguide and the waveguide section and include a capacitively acting tuning screw and an inductively acting tuning device, the latter being disposed in an end of the first rectangular waveguide remote from the waveguide section.

    摘要翻译: 用于产生并稳定地放大宽带rf信号的电路装置。 电路装置包括设计用于在低于其截止频率的频率范围内操作的第一矩形波导和用于在工作频率下操作的第二矩形波导。 在第一矩形波导中设置有源半导体元件,并向半导体元件提供直流电压。 提供至少一个波导部分用于连接第一和第二矩形波导并且具有与第二矩形波导相同的宽度和小于第二矩形波导的高度。 波导部分将第一矩形波导的横截面与第二矩形波导的横截面相匹配。 多个调谐装置设置在第一矩形波导和波导部分中,并且包括电容调节螺丝和电感作用调谐装置,后者设置在远离波导部分的第一矩形波导的端部。

    Compact, high-power, high-efficiency silicon avalanche diode l-band oscillator
    7.
    发明授权
    Compact, high-power, high-efficiency silicon avalanche diode l-band oscillator 失效
    紧凑型高功率高效硅铝合金二极管L波段振荡器

    公开(公告)号:US3638141A

    公开(公告)日:1972-01-25

    申请号:US3638141D

    申请日:1970-11-12

    申请人: RCA CORP

    IPC分类号: H03B1/00 H03B7/14

    CPC分类号: H03B7/14 H03B2201/015

    摘要: A compact, easily tunable, silicon avalanche diode oscillator for pulsed operation in the L-band which has an efficiency of about 40 percent, equal to that of vacuum tube oscillators operating at these frequencies, is obtained by utilizing a coaxial line composed of three serially connected sections in which the intermediate section has a characteristic impedance significantly larger than either of the other sections. One end of the coaxial line is short circuited; the avalanche diode is coupled to the coaxial line at a point between the short circuit and the beginning of the intermediate section; a variable capacitance is connected across the intermediate section at a given point thereof; and the other end of the coaxial line is connected to the output of the oscillator. The short circuit is made movable with respect to the position of the avalanche diode and the variable capacitance is made adjustable.

    摘要翻译: 通过利用由三个串联组成的同轴线,可以获得一种紧凑的,易于调节的硅雪崩二极管振荡器,用于在L波段中进行脉冲操作,其效率约为在这些频率下工作的真空管振荡器的约40% 连接部分,其中中间部分具有明显大于其它部分之一的特性阻抗。 同轴线的一端短路; 雪崩二极管在短路和中间部分的开始点之间的点处耦合到同轴线; 一个可变电容在给定的位置连接在中间部分上; 同轴线的另一端连接到振荡器的输出端。 使短路相对于雪崩二极管的位置可移动,并且可变电容被调节。

    Microwave cavity oscillator
    8.
    发明授权
    Microwave cavity oscillator 失效
    微波炉振荡器

    公开(公告)号:US3624555A

    公开(公告)日:1971-11-30

    申请号:US3624555D

    申请日:1970-03-02

    发明人: KLEIN CARL F

    IPC分类号: H03B1/00 H03B7/14 H03B7/12

    CPC分类号: H03B7/14 H03B2201/015

    摘要: A microwave cavity oscillator includes a cavity block of a suitable metal having a cavity in one wall. A microwave diode is secured to the closed end of the open-ended cavity with a tubular center conductor secured to the diode. A dielectric tuning element of ''''Rexolite'''' is mounted for axial adjustment within the open end of the cavity. The element provides a direct capacitive coupling of the open-ended cavity to the center conductor to change cavity impedance and the frequency without loading the cavity with the consequent losses. A bias wire is connected to the center conductor and extends laterally through an opening to a bias disc within a recess. A dielectric plate is placed between the disc and recess base. A bias pin is carried by a dielectric member within a bias plug which threads into the recess. The pin bears on the back of the disc to clamp the dielectric plane and element against the base recess. The diode package defines a current-dividing network around the diode permitting adjustment of the circulating current through the diode.

    Millimeter wave microstrip IMPATT diode oscillator
    9.
    发明授权
    Millimeter wave microstrip IMPATT diode oscillator 失效
    毫米波微带IMPATT二极管振荡器

    公开(公告)号:US4940953A

    公开(公告)日:1990-07-10

    申请号:US402664

    申请日:1989-09-05

    申请人: John R. Lamberg

    发明人: John R. Lamberg

    IPC分类号: H03B1/00 H03B9/14

    摘要: A millimeter wave microstrip oscillator utilizing either a pulsed or CW IMPATT diode as the active element provides relatively high power output not available with a GUNN diode. The circuit comprises a block of a conductive metal having a channel of rectangular cross-section formed therein and including a cylindrical well formed inwardly in the block from the floor of the channel. A packaged IMPATT diode of either the pulsed or CW variety fits into the well with the cap portion of the package coplanar with the microstrip circuit pattern when the microstrip rests on the floor of the channel. The pattern includes a shunt open circuit stub and an impedance transformer connected to the terminals of the IMPATT diode for effectively matching the diode's complex impedance with the load. A conductive cover is secured to the block and a laterally and vertically movable tuning screw passes through the cover for fine tuning the oscillator's output frequency and power. The circuit is capable of producing CW or pulsed signals with appropriate choice of IMPATT diode bias signal (pulsed or DC), microstrip circuit pattern dimensions and tuning screw diameter and position.

    摘要翻译: 使用脉冲或CW IMPATT二极管作为有源元件的毫米波微带振荡器提供GUNN二极管不可用的较高功率输出。 该电路包括导电金属块,其具有形成在其中的矩形横截面的通道,并且包括从通道的底部向内形成的圆柱形阱。 当微带搁置在通道的地板上时,脉冲或CW品种的封装IMPATT二极管装配到阱中,封装的盖部分与微带电路图案共面。 该模式包括分流开路短截线和连接到IMPATT二极管的端子的阻抗变换器,用于有效地将二极管的复阻抗与负载匹配。 导电盖固定到块上,并且横向和可垂直移动的调谐螺钉穿过盖子,以微调振荡器的输出频率和功率。 该电路能够通过适当选择IMPATT二极管偏置信号(脉冲或DC),微带电路图形尺寸和调谐螺杆直径和位置来产生CW或脉冲信号。

    Mounting a semiconductor device in a microwave cavity oscillator
    10.
    发明授权
    Mounting a semiconductor device in a microwave cavity oscillator 失效
    将半导体器件安装在微波谐振腔中

    公开(公告)号:US4556852A

    公开(公告)日:1985-12-03

    申请号:US533356

    申请日:1983-09-19

    CPC分类号: H03B5/1823 H03B2201/015

    摘要: A microwave cavity oscillator has a semiconductor device, for example a transistor for exciting the cavity to oscillate. The device is mounted upon a substrate which is itself mounted, conveniently soldered, upon a carrier which is releasably secured in a chamber adjacent the cavity. The carrier and substrate are mounted so that the device is coupled to the cavity via a hole extending therebetween and can be removed and installed as a sub-assembly to facilitate tuning and other adjustments in a test bed. In preferred embodiments one end of the carrier is located in spigot-and-socket fashion in a recess surrounding a hole communicating with the cavity. The other end of the carrier is urged by spring means to positively and accurately locate the carrier relative to the cavity. A part of the substrate extends through the hole and into the cavity. The transistor is mounted on the part within the hole and the part within the cavity serves as a capacitive coupling probe.

    摘要翻译: 微波空腔振荡器具有半导体器件,例如用于激发腔体振荡的晶体管。 该装置安装在基板上,该基板本身安装方便地焊接在可释放地固定在邻近腔体的腔室中的载体上。 载体和基底安装成使得该装置通过在其间延伸的孔联接到空腔,并且可以将其移除并安装为子组件,以便于在试验台中的调节和其它调节。 在优选实施例中,载体的一端以插座方式设置在围绕与空腔连通的孔的凹部中。 载体的另一端通过弹簧装置被推动以使载体相对于空腔正确地和精确地定位。 基板的一部分延伸穿过孔并进入空腔。 晶体管安装在孔内的部件上,腔内的部分用作电容耦合探针。