公开(公告)号：US3638141A

公开(公告)日：1972-01-25

申请号：US3638141D

申请日：1970-11-12

Applicant: RCA CORP

Inventor： LEVINE PETER ALAN ,  LIU SHING-GONG

IPC: H03B1/00 ,  H03B7/14

CPC classification number: H03B7/14 ,  H03B2201/015

Abstract: A compact, easily tunable, silicon avalanche diode oscillator for pulsed operation in the L-band which has an efficiency of about 40 percent, equal to that of vacuum tube oscillators operating at these frequencies, is obtained by utilizing a coaxial line composed of three serially connected sections in which the intermediate section has a characteristic impedance significantly larger than either of the other sections. One end of the coaxial line is short circuited; the avalanche diode is coupled to the coaxial line at a point between the short circuit and the beginning of the intermediate section; a variable capacitance is connected across the intermediate section at a given point thereof; and the other end of the coaxial line is connected to the output of the oscillator. The short circuit is made movable with respect to the position of the avalanche diode and the variable capacitance is made adjustable.

Abstract translation: 通过利用由三个串联组成的同轴线，可以获得一种紧凑的，易于调节的硅雪崩二极管振荡器，用于在L波段中进行脉冲操作，其效率约为在这些频率下工作的真空管振荡器的约40％ 连接部分，其中中间部分具有明显大于其它部分之一的特性阻抗。 同轴线的一端短路; 雪崩二极管在短路和中间部分的开始点之间的点处耦合到同轴线; 一个可变电容在给定的位置连接在中间部分上; 同轴线的另一端连接到振荡器的输出端。 使短路相对于雪崩二极管的位置可移动，并且可变电容被调节。

公开(公告)号：US3882420A

公开(公告)日：1975-05-06

申请号：US47321074

申请日：1974-05-24

Applicant: RCA CORP

Inventor： LIU SHING-GONG

IPC: H01L23/66 ,  H03B9/14 ,  H03F3/10 ,  H03B3/04 ,  H03B7/14

CPC classification number: H03B9/14 ,  H01L23/66 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/3011 ,  H03B9/142 ,  H03F3/10 ,  H01L2924/00

Abstract: An active element for generating signals in a Trapatt mode at a desired frequency is included in a transmission line circuit on a ferrite substrate. The transmission line circuit has a first magnetically tunable portion determining the desired frequency of operation and a second portion having an automatic magnetically tunable impedance for operating the element in the Trapatt mode.

Abstract translation: 在铁氧体基板上的传输线电路中包括用于以期望频率产生Trapatt模式信号的有源元件。 传输线电路具有确定期望的操作频率的第一可磁调部分和具有用于在Trapatt模式下操作元件的自动可调谐阻抗的第二部分。

公开(公告)号：US3600649A

公开(公告)日：1971-08-17

申请号：US3600649D

申请日：1969-06-12

Applicant: RCA CORP

Inventor： LIU SHING-GONG ,  RISKO JOHN JOSEPH

IPC: F01C19/00 ,  H01L21/00 ,  H01L29/00 ,  H01L5/00

CPC classification number: H01L21/00 ,  F01C19/005 ,  H01L29/00 ,  Y10S148/098 ,  Y10S438/936

Abstract: A high power avalanche diode includes a substrate of N+-type semiconductor material having an epitaxial layer of a semiconductor material on a surface thereof. The epitaxial layer includes an N-type region adjacent the surface of the substrate and a P-type region over the N-type region forming a PN junction therebetween. The N-type region is at least 3 microns thick and is of uniform carrier concentration. The P-type region has a graded carrier concentration which increases from the PN junction to the surface of the epitaxial layer. The avalanche diode is made by epitaxially forming a layer of Ntype semiconductor material on the surface of a substrate of N+type semiconductor material. A source of P-type dopant material is provided on the surface of the epitaxial layer. The P-type dopant material is diffused into the epitaxial layer to a distance which is spaced from the substrate not less than 3 microns and so as to provide the graded carrier concentration in the resultant P-type region.

公开(公告)号：US3593193A

公开(公告)日：1971-07-13

申请号：US3593193D

申请日：1969-06-19

Applicant: RCA CORP

Inventor： CHANG KERN KO-NAN ,  LIU SHING-GONG ,  RISKO JOHN JOSEPH

IPC: H03B9/14 ,  H03B7/14

CPC classification number: H03B9/14

Abstract: A wave tuning structure including a first portion in cooperative relationship with an anomalous silicon avalanche diode, a second portion coupled to the first portion for supporting oscillations at the transit time frequency of the diode, and a third portion coupled to at least one of the first and second portions for supporting oscillations at a given frequency significantly higher than the transit time frequency, serves to provide relatively high power at the given frequency to a load coupled to the third portion of the wave tuning structure, such as 17 watts at 24 gigahertz and 28 watts at 10.5 gigahertz for instance, in response to a bias pulse being applied to the diode. A significant output power is still obtained at frequencies exceeding 33 gigahertz.

公开(公告)号：US3558889A

公开(公告)日：1971-01-26

申请号：US3558889D

申请日：1966-11-02

Applicant: RCA CORP

Inventor： CHANG KERN K N ,  LIU SHING-GONG

IPC: H01L33/02 ,  H05B33/00

CPC classification number: H01L33/02

Abstract: A light-radiating element, capable of emitting light pulses over a narrow frequency bandwidth, having a duration in the order of 10-9 to 10-7 seconds, is obtained from a given bulk semiconductor material of a single type conductivity, such as N-type GaAs, having ohmic electrodes in response to the application thereto through these ohmic electrodes of an electric field of a magnitude exceeding a given threshold. The pattern of radiation is almost constant over 180* in both horizontal and vertical directions.