摘要:
A surface acoustic wave filter device includes surface acoustic wave filters, one of which includes a longitudinally coupled resonator-type first filter section and a longitudinally coupled resonator-type second filter section. The second filter section is electrically connected in parallel or series with the first filter section on at least one of an input signal side and an output signal side. The first filter section includes a first IDT group including three IDTs. The second filter section includes a second IDT group including three IDTs. Another surface acoustic wave filter includes a third IDT group that is cascade connected to the first filter section and the second filter section and includes IDTs arranged in order in a line in a surface acoustic wave propagation direction.
摘要:
A reflector of the elastic wave resonator in an elastic wave device has first and second regions. The second region has third and fourth regions. The first region is located near to the IDTs of the reflector, while the second region is located farther from them. The third region is located nearer to the IDTs in the second region, while the fourth region is located farther from them. As a result that the center frequency of the reflection band in the fourth region is lower than that in the third region, an elastic wave device with low energy loss and insertion loss is provided.
摘要:
An elastic wave device includes a piezoelectric substrate, an IDT electrode disposed on the piezoelectric substrate, a wiring electrode disposed on the piezoelectric substrate and connected to the IDT electrode, a first insulator disposed on the piezoelectric substrate to seal the IDT electrode and the wiring electrode, a resin layer provided on the first insulator, an inductor electrode disposed on the resin layer, a second insulator disposed on the resin layer to cover the inductor electrode, a terminal electrode disposed on the second insulator, and a connecting electrode passing through the first insulator, the second insulator, and the resin layer to electrically connect the wiring electrode, the terminal electrode, and the inductor electrode. The first insulator includes a resin and filler dispersed in the resin. A density of filler in the resin layer is smaller than an average density of the filler in the first insulator. This elastic wave device has excellent characteristics of the inductor while reducing variations of the characteristics.
摘要:
An acoustic wave device includes a piezoelectric substrate, interdigitated electrodes formed on the piezoelectric substrate, and an insulation film that is formed on a surface of the interdigitated electrodes by atomic layer deposition and includes aluminum oxide.
摘要:
For improving the matching of a DMS track that is connected in series with a reactance element, it is proposed to connect a shunt branch to ground between the DMS track and reactance element parallel to the signal-carrying conductor section, where a capacitive element is arranged in this shunt branch.
摘要:
An elastic wave filter device includes first and second elastic wave filter units connected to an unbalanced terminal. The first and second elastic wave filter units include first to third IDTs and fourth to sixth IDTs, respectively. One end of the first IDT, one end of the second IDT, one end of the fourth IDT, and one end of the sixth IDT are commonly connected together and are connected to the unbalanced terminal. The second IDT and the fifth IDT are each divided into first to third sub-IDT portions in the elastic wave propagation direction, respectively. The second sub-IDT portions of the second and fifth IDTs are connected to first and second balanced terminals, respectively.
摘要:
An elastic wave filter includes two longitudinally coupled resonator type elastic wave filter elements that are cascade connected with each other, each longitudinally coupled resonator type elastic wave filter element including three IDTs (interdigital transducers) arranged on a piezoelectric substrate in a transmitting direction of an elastic wave. In at least one of the longitudinally coupled resonator type elastic wave filter elements, electrode fingers of the IDTs that are cascade connected are arranged at a pitch that is smaller than a pitch of electrode fingers of the remaining IDT. The adverse effect of a parasitic capacitance in cascade connected wires disposed between the longitudinally coupled resonator type elastic wave filter elements is reduced so as to improve impedance matching of a cascade connected portion and to improve the VSWR characteristics of input-output terminals of the elastic wave filter.
摘要:
A longitudinally coupled multi-mode SAW resonator filter includes input and output interdigital transducers (IDTs) with a control IDT therebetween to control a state of the surface acoustic wave. The input, output, and control IDTs alternatively arrange two different zones C and E having respective electrode period lengths PC and PE, being equal to a sum of the electrode finger width L and spacing S between electrode fingers, and a number of respective pairs MC and ME of electrode fingers is set to 1 in both zones C and E. Electrode fingers in zones C and E are all connected to a feeder conductor. Hence, a filter having small insertion loss, and a wide fractional bandwidth of 2000-4000 ppm is achieved by canceling and decreasing sums of reflected waves from the electrode fingers in zones C and E, and decreasing the effective reflection coefficient per the electrode finger.
摘要:
An acoustic wave device includes first and second 3-IDT acoustic wave filters provided on a piezoelectric substrate. A second IDT in the first acoustic wave filter is electrically connected to a second IDT in the second acoustic wave filter and a third IDT in the first acoustic wave filter is electrically connected to a third IDT in the second acoustic wave filter to cascade the first acoustic wave filter with the second acoustic wave filter. An acoustic wave resonator is connected to a first IDT in the first acoustic wave filter. In the acoustic wave device, NA/NB is in a range from about 2.6 to about 3.5 and fB/fa is in a range from about 0.995 to about 1.010, where NA denotes the number of electrode fingers of the first IDT in the first acoustic wave filter, NB denotes the number of electrode fingers of each of the second and third IDTs in the first acoustic wave filter, fB denotes the end frequency of a stop band of each of reflectors in the first and second acoustic wave filters, and fa denotes an anti-resonant frequency of the acoustic wave resonator.
摘要:
A surface acoustic wave filter device includes first and second longitudinally coupled resonator type surface acoustic wave filter units. The first and second filter units are cascade-connected to each other. A phase of a signal flowing through a first signal line electrically connecting second IDTs of the first and second surface acoustic wave filter units is different by about 180° from a phase of a signal flowing through a signal line electrically connecting third IDTs of the first and second surface acoustic wave filter units. A surface acoustic wave resonator is connected between the first and second signal lines. A resonance point of the surface acoustic wave resonator is set in an attenuation region in the vicinity of the edge of a low frequency side of a filter passband or an anti-resonance point of the surface acoustic wave resonator is set in an attenuation region in the vicinity of the edge of a high frequency side of the filter passband