公开(公告)号：US20090079494A1

公开(公告)日：2009-03-26

申请号：US12237822

申请日：2008-09-25

申请人： Christoph Kerner ,  Wim Magnus ,  Dusan Golubovic

发明人： Christoph Kerner ,  Wim Magnus ,  Dusan Golubovic

IPC分类号： H01L39/22

CPC分类号： B82Y10/00 ,  G06N99/002 ,  G11C11/06 ,  G11C11/44 ,  Y10S505/832

摘要： A method of operating a quantum system comprising computational elements, including an insulated ring of superconductive material, and semi-closed rings used as an interface between the computational elements and the external world, is disclosed. In one aspect, the method comprises providing an electrical signal, e.g. a current, in an input ring magnetically coupled to a computational element, which generates a magnetic field in the computational element and sensing the change in the current and/or voltage of an output element magnetically coupled to the computational element. The electrical input signal can be an AC signal or a DC signal. The computational element is electromagnetically coupled with other adjacent computational elements and/or with the interface elements. The corresponding magnetic flux between the computational elements and/or the interface elements acts as an information carrier. Ferromagnetic cores are used to improve the magnetic coupling between adjacent elements.

摘要翻译： 公开了一种操作量子系统的方法，其包括计算元件，包括超导材料的绝缘环，以及用作计算元件和外部世界之间的界面的半闭环。 在一个方面，该方法包括提供电信号，例如， 磁耦合到计算元件的输入环中的电流，其在计算元件中产生磁场并感测磁耦合到计算元件的输出元件的电流和/或电压的变化。 电输入信号可以是AC信号或DC信号。 计算元件与其他相邻的计算元件和/或与接口元件电磁耦合。 计算元件和/或接口元件之间的相应磁通量用作信息载体。 铁磁芯用于改善相邻元件之间的磁耦合。

公开(公告)号：US5401530A

公开(公告)日：1995-03-28

申请号：US205357

申请日：1994-03-03

申请人： Itsuro Tamura ,  Satoshi Fujita ,  Masao Wada

发明人： Itsuro Tamura ,  Satoshi Fujita ,  Masao Wada

IPC分类号： H01L39/02 ,  H01L39/00

CPC分类号： H01L39/025 ,  Y10S505/817 ,  Y10S505/832 ,  Y10S505/874

摘要： A process for producing a Josephson device is disclosed, wherein a Josephson junction is formed over a recess step by oblique deposition and a protective layer of conducting material or semiconducting material is formed on the Josephson junction. The actual thickness of the Josephson junction is controlled to be smaller due to the proximity effect.

摘要翻译： 公开了一种制造约瑟夫逊装置的方法，其中通过倾斜沉积在凹陷步骤上形成约瑟夫逊结，并且在约瑟夫逊结上形成导电材料或半导体材料的保护层。 由于邻近效应，约瑟夫逊结的实际厚度被控制得较小。

公开(公告)号：US5358928A

公开(公告)日：1994-10-25

申请号：US949098

申请日：1992-09-22

申请人： David S. Ginley ,  Vincent M. Hietala ,  Gert K. G. Hohenwarter ,  Jon S. Martens ,  Thomas A. Plut ,  Chris P. Tigges ,  Gregory A. Vawter ,  Thomas E. Zipperian

发明人： David S. Ginley ,  Vincent M. Hietala ,  Gert K. G. Hohenwarter ,  Jon S. Martens ,  Thomas A. Plut ,  Chris P. Tigges ,  Gregory A. Vawter ,  Thomas E. Zipperian

IPC分类号： H01L39/22 ,  H01B12/00 ,  H01L27/12

CPC分类号： H01L39/225 ,  Y10S505/702 ,  Y10S505/783 ,  Y10S505/832

摘要： A process for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO.sub.3 crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O.sub.3, followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry.

摘要翻译： 使用HTS材料制备非迟滞和滞后的约瑟夫逊结的方法，其导致具有在高温下操作并且保持高均匀性和质量的能力的结。 通过对LaAlO 3晶体衬底进行步骤蚀刻，然后在衬底上沉积TlCaBaCuO的薄膜，覆盖该步骤，并在该步骤和随后的约瑟夫逊结处形成晶界而形成非滞后约瑟夫逊结。 一旦形成非滞后结，形成滞后约瑟夫逊结的下一步就是向系统增加电容。 在当前的实施例中，这是通过添加薄的电介质层LaAlO3，其次是正常金属的覆盖层，其中通过首先沉积钛（Ti）的薄层，随后是金层 Au）。 电介质层和普通金属帽被图案化成所需的几何形状。

公开(公告)号：US5347143A

公开(公告)日：1994-09-13

申请号：US103307

申请日：1993-08-09

申请人： Hehrwart Schroder

发明人： Hehrwart Schroder

IPC分类号： H01L39/22 ,  H01L39/24

CPC分类号： H01L39/228 ,  Y10S505/702 ,  Y10S505/832 ,  Y10S505/848 ,  Y10S505/849 ,  Y10S505/874 ,  Y10S505/922

摘要： A superconducting tunnel element, having a plurality of super conductors separated by barriers, the superconductors each comprising two physically separate but electrically connected superconducting layers and one insulated control layer. As a result, summation of the detection capacity or of the transmitting intensity becomes possible. Also, the simultaneous detection or transmission is permitted on arbitrary different frequencies or a summation of the signal intensity is possible in the case of SQUID-systems.

摘要翻译： 一种超导隧道元件，其具有由屏障隔开的多个超导体，每个超导体包括两个物理分离但电连接的超导层和一个绝缘控制层。 结果，检测能力或发射强度的总和成为可能。 此外，在任意的不同频率上允许同时检测或发送，或者在SQUID系统的情况下可以求和信号强度。

公开(公告)号：US5318950A

公开(公告)日：1994-06-07

申请号：US009871

申请日：1993-01-27

申请人： Jackie Etrillard

发明人： Jackie Etrillard

IPC分类号： G01R33/035 ,  H01L39/22 ,  H01B12/00 ,  B44C1/22 ,  H01L39/12

CPC分类号： H01L39/225 ,  G01R33/0354 ,  Y10S505/832

摘要： This device or junction is essentially constituted by a substrate made from an electrically insulating material (2), a vertical wall (4) formed on the substrate and extending in a given direction (x), said wall being made from said insulating material, a superconducting material ribbon (8) in two separate parts (10, 12) located on either side of the wall and bearing on the latter, the ribbon being oriented in a direction perpendicular to the said direction, and two interconnection contacts (14, 16) respectively placed on the two portions of the ribbon.

摘要翻译： 该装置或结点基本上由由电绝缘材料（2）制成的基板，形成在基板上并沿给定方向（x）延伸的垂直壁（4）构成，所述壁由所述绝缘材料制成， 超导材料带（8）位于壁的任一侧上的两个独立部分（10,12）中，并且在其上具有轴承，所述带沿垂直于所述方向的方向定向，以及两个互连触头（14,16） 分别放置在色带的两个部分上。

公开(公告)号：US4878094A

公开(公告)日：1989-10-31

申请号：US175311

申请日：1988-03-30

申请人： Minko Balkanski

发明人： Minko Balkanski

IPC分类号： H01L27/18 ,  H01M2/10 ,  H01M6/18

CPC分类号： H01L27/18 ,  H01M2/1066 ,  H01M6/18 ,  Y10S505/817 ,  Y10S505/832

摘要： A self-powered electronic component, particularly, a Josephson junction, is formed of a layer of a superconductor epitaxially grown on a substrate formed of a single crystal of silicon. In accordance with one embodiment of the invention, the expitaxial superconductor layer is separated into two parts by a groove defined by a thin growth region, forming the Josephson junction. On the epitaxial layer at the first side of the junction is deposited a thin layer of an insertion material forming the positive pole of the Josephson junction as well as the cathode of a solid state power generator. On the epitaxial layer and over the thin layer of insertion material is deposited a separator, or fast ion conductor, which assumes the weak link of the Josephson junction as well as separates the ion source from the electronic exchanger and assumes the fast ion transport. A thin film of material, such as Lithium, providing an ion source and forming the anode of the junction, is deposited over the Josephson junction, covering the separator and extending into contact with the opposite side of the junction.

摘要翻译： 自供电的电子元件，特别是约瑟夫逊结，由外延生长在由单晶硅构成的衬底上的超导体层形成。 根据本发明的一个实施例，外延超导体层通过由薄生长区限定的凹槽分成两部分，形成约瑟夫逊结。 在结的第一侧的外延层上沉积形成约瑟夫逊结正极的插入材料的薄层以及固态发电机的阴极。 在外延层上和薄层的插入材料上沉积隔离层或快速离子导体，该隔离层或快离子导体假设约瑟夫逊结的弱连接，并将离子源与电子交换器分开，并采取快速的离子迁移。 提供离子源并形成结的阳极的诸如锂的材料薄膜沉积在约瑟夫逊结上方，覆盖隔离物并且延伸成与结的相对侧接触。

公开(公告)号：US4164030A

公开(公告)日：1979-08-07

申请号：US828766

申请日：1977-08-29

申请人： Mikhail J. Kupriyanov ,  Gennady M. Lapir ,  Konstantin K. Likharev ,  Vasily K. Semenov ,  Petr E. Kandyba

发明人： Mikhail J. Kupriyanov ,  Gennady M. Lapir ,  Konstantin K. Likharev ,  Vasily K. Semenov ,  Petr E. Kandyba

IPC分类号： H01L39/22 ,  G11C11/44

CPC分类号： H01L39/223 ,  Y10S505/832

摘要： Disclosure is made of a film cryotron comprising a super-conductive ground plane and two superconductive electrodes arranged on said ground plane. The ground plane and electrodes are all insulated from one another. The electrodes are interconnected by an elongated distributed Josephson junction and have input lines and a control line arranged along the Josephson junction and above one of the electrodes. The electrode under the control line is shaped as a strip extending along the Josephson junction. The input line is connected to this electrode at a point spaced from the points at which the control line intersects the boundaries of this electrode and from the ends of the junction at a distance which is greater than the width of said electrode and the depth of the magnetic field penetration into the junction. At the point of connection to the electrode, the input line has a width which is less than that of the electrode.

摘要翻译： 公开了一种薄膜冷冻机，其包括设置在所述接地平面上的超导电接地平面和两个超导电极。 接地面和电极都彼此绝缘。 电极通过细长的分布式约瑟夫逊结相互连接，并具有输入线和沿约瑟夫逊结和电极之上布置的控制线。 控制线下的电极成形为沿着约瑟夫逊结延伸的条带。 输入线在与控制线与该电极的边界相交的点与结点的端部间隔开的点处连接到该电极，该距离大于所述电极的宽度和深度 磁场穿透入接头。 在与电极连接的点处，输入线的宽度小于电极的宽度。

公开(公告)号：US09627045B1

公开(公告)日：2017-04-18

申请号：US14636632

申请日：2015-03-03

申请人： Hypres Inc.

发明人： Oleg A. Mukhanov ,  Alan M. Kadin ,  Ivan P. Nevirkovets ,  Igor V. Vernik

IPC分类号： G11C11/44 ,  H01L39/02 ,  H01L39/22

CPC分类号： G11C11/44 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L39/025 ,  H01L39/223 ,  H01L39/2493 ,  Y10S505/832

摘要： A superconducting memory cell includes a magnetic Josephson junction (MJJ) with a ferromagnetic material, having at least two switchable states of magnetization. The binary state of the MJJ manifests itself as a pulse appearing, or not appearing, on the output. A superconducting memory includes an array of memory cells. Each memory cell includes a comparator with at least one MJJ. Selected X and Y-directional write lines in their combination are capable of switching the magnetization of the MJJ. A superconducting device includes a first and a second junction in a stacked configuration. The first junction has an insulating layer barrier, and the second junction has an insulating layer sandwiched in-between two ferromagnetic layers as barrier. An electrical signal inputted across the first junction is amplified across the second junction.

公开(公告)号：US20120184445A1

公开(公告)日：2012-07-19

申请号：US13349641

申请日：2012-01-13

申请人： Oleg A. Mukhanov ,  Alan M. Kadin ,  Ivan P. Nevirkovets ,  Igor V. Vernik

发明人： Oleg A. Mukhanov ,  Alan M. Kadin ,  Ivan P. Nevirkovets ,  Igor V. Vernik

IPC分类号： G11C11/44 ,  H01L29/06

CPC分类号： G11C11/44 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L39/025 ,  H01L39/223 ,  H01L39/2493 ,  Y10S505/832

摘要： A superconducting memory cell includes a magnetic Josephson junction (MJJ) with a ferromagnetic material, having at least two switchable states of magnetization. The binary state of the MJJ manifests itself as a pulse appearing, or not appearing, on the output. A superconducting memory includes an array of memory cells. Each memory cell includes a comparator with at least one MJJ. Selected X and Y-directional write lines in their combination are capable of switching the magnetization of the MJJ. A superconducting device includes a first and a second junction in a stacked configuration. The first junction has an insulating layer barrier, and the second junction has an insulating layer sandwiched in-between two ferromagnetic layers as barrier. An electrical signal inputted across the first junction is amplified across the second junction.

摘要翻译： 超导存储单元包括具有铁磁材料的磁性约瑟夫逊结（MJJ），具有至少两个可切换的磁化状态。 MJJ的二进制状态表现为输出上出现或未出现的脉冲。 超导存储器包括存储器单元阵列。 每个存储单元包括具有至少一个MJJ的比较器。 组合中选定的X和Y方向写入线能够切换MJJ的磁化。 超导装置包括堆叠构型的第一和第二结。 第一结具有绝缘层阻挡层，并且第二接头具有夹在两个铁磁层之间的绝缘层作为阻挡层。 跨越第一结输入的电信号跨越第二结放大。

公开(公告)号：US5629889A

公开(公告)日：1997-05-13

申请号：US572483

申请日：1995-12-14

申请人： Premala Chandra ,  Lev B. Loffe

发明人： Premala Chandra ,  Lev B. Loffe

IPC分类号： G11C11/44 ,  G11C15/00 ,  G11C15/04 ,  G11C29/00

CPC分类号： G11C29/88 ,  G11C11/44 ,  G11C15/06 ,  Y10S505/832 ,  Y10S505/841

摘要： A superconducting fault-tolerant programmable read-only memory (SFT-PROM) cell stores information in the phases of superconducting wires in a Josephson array. The information is addressable and retrievable in a fault-tolerant manner due to the non local nature of the information stored. The coding and decoding process is content-addressable and parallel due to the multitude of interconnections, resulting in picosecond data access time. The SFT-PROM cell comprises superposed WRITE/READ arrays and a reset circuit that ensures multiple non-destructive read-out of data.

摘要翻译： 超导容错可编程只读存储器（SFT-PROM）单元在约瑟夫逊阵列中的超导线的相位中存储信息。 由于存储的信息的非本地性质，该信息是可寻址的并且以容错方式可检索。 编码和解码过程是内容寻址和并行的，由于众多的互连，导致皮秒数据访问时间。 SFT-PROM单元包括叠加的写入/读取阵列和复位电路，其确保数据的多个非破坏性读出。