Three dimensional etching process
    1.
    发明授权
    Three dimensional etching process 失效
    三维蚀刻工艺

    公开(公告)号:US06682657B2

    公开(公告)日:2004-01-27

    申请号:US09101306

    申请日:1998-07-07

    IPC分类号: B81B704

    摘要: A method of forming three-dimensional structures on a substrate by a single reactive ion each run whereby a mask is formed on said substrate before a series of iterations are carried out, each iteration including a mask etch and a substrate etch, so that successive iterations give life to reduction in the mask area and exposure of further areas of substrate.

    摘要翻译: 通过单个反应离子在衬底上形成三维结构的方法每次运行,由此在进行一系列迭代之前在所述衬底上形成掩模,每次迭代包括掩模蚀刻和衬底蚀刻,使得连续迭代 使生命减少面罩区域和曝光更多的底物。

    Method for producing needle diamond-type structure
    3.
    发明授权
    Method for producing needle diamond-type structure 失效
    针状金刚石结构的制造方法

    公开(公告)号:US06309554B1

    公开(公告)日:2001-10-30

    申请号:US09276908

    申请日:1999-03-26

    IPC分类号: B81B704

    CPC分类号: H01J9/025 H01J2201/30457

    摘要: A method of producing a needle-like diamond structure including the steps of forming a layer of anodized alumina on a diamond substrate, the anodized alumina having a plurality of through holes; vapor-depositing a substance resistant to plasma etching by a vacuum vapor-depositing method to form dots on said diamond substrate, wherein the layer of anodized alumina acts as a mask for the vapor deposition; removing the anodized alumina; and performing a plasma etching treatment while using the dots as a mask, thereby forming regularly-arranged, needle-like diamond columns.

    摘要翻译: 一种制造针状金刚石结构的方法,包括以下步骤:在金刚石基底上形成阳极化氧化铝层,所述阳极化氧化铝具有多个通孔; 通过真空气相沉积方法气相沉积耐等离子体蚀刻的物质,以在所述金刚石基底上形成点,其中阳极氧化的氧化铝层用作气相沉积的掩模; 去除阳极氧化的氧化铝; 并且在使用点作为掩模的同时进行等离子体蚀刻处理,从而形成规则排列的针状菱形柱。

    Microelectromechanical mirror and mirror array

    公开(公告)号:US06533947B2

    公开(公告)日:2003-03-18

    申请号:US09894021

    申请日:2001-06-27

    IPC分类号: B81B704

    CPC分类号: G02B26/0841 B81B3/0062

    摘要: Method for manufacturing microelectromechanical mirror and mirror array. Control electrodes and addressing circuitry are etched from a metallic layer deposited onto a reference layer substrate. Standoff-posts are etched from a subsequently deposited polyimide layer. A freely movable plate flexibly suspended from a plurality of electrostatic actuators that are flexibly suspended from a support frame is etched from an actuation layer substrate using a high aspect ratio etch. A mirror support post and surface are etched from a mirror substrate using a high aspect ratio etch. The mirror and actuation layer substrates are fusion bonded together. The reference and actuation layer substrates are bonded together and held apart by the standoff posts. A reflective metallic layer is deposited onto the mirror surface and polished. The mirror is etched from the mirror surface to free the microelectromechanical mirror. Mirror arrays are made by performing the aforementioned steps using standard IC processing techniques.