公开(公告)号：US06986814B2

公开(公告)日：2006-01-17

申请号：US10029311

申请日：2001-12-20

申请人： Gary E. Wheat ,  Terri K. Brown ,  Richard L. Schmidt ,  Edward J. Cove

发明人： Gary E. Wheat ,  Terri K. Brown ,  Richard L. Schmidt ,  Edward J. Cove

IPC分类号： C23G16/00

CPC分类号： C23C16/45508 ,  C23C10/06 ,  C23C16/12 ,  C23C16/4488 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/45591

摘要： A gas distributor suitable for introducing a carrier gas at the top of a coating container used to provide a metallic coating on articles. The gas distributor includes a gas inlet and a gas outlet head in communication with the gas inlet for receiving a flow of gas from the gas inlet. A plurality of gas outlets through which the gas flow exits as a gas stream are spaced along the peripheral surface of the gas outlet head. A plurality of gas deflectors, each proximate to one of the gas outlets, at least initially direct the gas stream exiting the gas outlet in at least a generally centripetal path. This gas distributor can be used in vapor coating apparatus having a coating container, at least one holder for each article to be coated positioned within the coating container and below the gas outlet head of the gas distributor and at least one holder for the source of the metallic coating positioned within the coating container and below the gas outlet head of the gas distributor. A method is also provided for introducing the carrier gas as a plurality of carrier gas streams proximate the top of the coating container so that each carrier gas stream flows at least initially in at least a generally centripetal path, as well as a method for coating the articles with a metallic coating in the coating container.

公开(公告)号：US07220321B2

公开(公告)日：2007-05-22

申请号：US10808050

申请日：2004-03-24

申请人： Kurt L. Barth ,  Robert A. Enzenroth ,  Walajabad S. Sampath

发明人： Kurt L. Barth ,  Robert A. Enzenroth ,  Walajabad S. Sampath

IPC分类号： C23G16/00

CPC分类号： H01L31/1828 ,  Y02E10/543

摘要： An apparatus and processes for large scale inline manufacturing of CdTe photovoltaic modules in which all steps, including rapid substrate heating, deposition of CdS, deposition of CdTe, CdCl2 treatment, and ohmic contact formation, are performed within a single vacuum boundary at modest vacuum pressures. A p+ ohmic contact region is formed by subliming a metal salt onto the CdTe layer. A back electrode is formed by way of a low cost spray process, and module scribing is performed by means of abrasive blasting or mechanical brushing through a mask. The vacuum process apparatus facilitates selective heating of substrates and films, exposure of substrates and films to vapor with minimal vapor leakage, deposition of thin films onto a substrate, and stripping thin films from a substrate. A substrate transport apparatus permits the movement of substrates into and out of vacuum during the thin film deposition processes, while preventing the collection of coatings on the substrate transport apparatus itself.

摘要翻译： CdTe光伏组件的大规模在线制造的装置和方法，其中包括快速衬底加热，CdS沉积，CdTe沉积，CdCl 2处理和欧姆接触形成的所有步骤在 在适当的真空压力下的单个真空边界。 通过将金属盐升华到CdTe层上而形成p +欧姆接触区域。 通过低成本喷涂工艺形成背面电极，并通过喷砂或机械刷涂通过掩模进行模块划线。 真空处理装置有助于基板和薄膜的选择性加热，基板和薄膜暴露于蒸汽，蒸汽泄漏最小，薄膜沉积到基板上，以及从基板剥离薄膜。 基板输送装置允许在薄膜沉积工艺期间将基板移入和移出真空，同时防止基板输送装置本身上的涂层的收集。

公开(公告)号：US06921062B2

公开(公告)日：2005-07-26

申请号：US10201518

申请日：2002-07-23

申请人： John Gregg ,  Scott Battle ,  Jeffrey I. Banton ,  Donn Naito ,  Marianne Fuierer

发明人： John Gregg ,  Scott Battle ,  Jeffrey I. Banton ,  Donn Naito ,  Marianne Fuierer

IPC分类号： C23C16/448 ,  B01F3/04 ,  C23G16/00

CPC分类号： C23C16/4483 ,  C23C16/4408 ,  C23C16/4481 ,  C23C16/45544 ,  C23C16/50 ,  F17C3/00 ,  F17C3/02 ,  F17C11/00 ,  F17C2203/03 ,  Y02E60/321 ,  Y10S261/65

摘要： A vaporizer delivery system for use in semiconductor manufacturing processes including a plurality of vertically stacked containers for holding a vaporizable source material. Each of the vertically stacked containers includes a plurality of vented protuberances extending into the interior of the each stacked container thereby providing channels for passage of a carrier gas between adjacent vertically stacked containers.

摘要翻译： 一种用于半导体制造工艺的蒸发器输送系统，包括用于保持可蒸发的源材料的多个垂直堆叠的容器。 每个垂直堆叠的容器包括延伸到每个堆叠的容器的内部的多个通风突起，从而提供用于在相邻的垂直堆叠的容器之间通过载气的通道。

公开(公告)号：US5961724A

公开(公告)日：1999-10-05

申请号：US52522

申请日：1998-03-30

申请人： Farro Kaveh ,  Brett C. Richardson

发明人： Farro Kaveh ,  Brett C. Richardson

IPC分类号： H01L21/00 ,  C23G16/00

CPC分类号： H01L21/67017 ,  Y10S156/916

摘要： A substrate processing system configured for processing a substrate utilizing source gas released from at least one gas jet into a substrate processing chamber of the substrate processing system. The substrate processing system includes a first gas port configured to introduce the gas jet into the substrate processing chamber and a directional blocking wall protruding above a plane formed by the opening of the first gas port. The directional blocking wall is disposed closer to a first portion of a circumference of the first gas port than a second portion of the circumference. The first portion of the circumference is configured to be disposed toward a given portion of the substrate processing chamber when the gas distribution plate is positioned within the substrate processing chamber such that the directional blocking wall is disposed between the gas jet and the given portion of the substrate processing chamber, thereby preferentially reducing the entrainment of the gas from the given portion of the substrate processing chamber into the gas jet when the gas jet is released into the substrate processing chamber.

摘要翻译： 一种衬底处理系统，被配置为使用从至少一个气体射流释放到衬底处理系统的衬底处理室中的源气体来处理衬底。 基板处理系统包括：第一气体端口，被配置为将气体射流引入基板处理室;以及方向阻挡壁，其突出在由第一气体端口的开口形成的平面上方。 所述方向阻挡壁比所述圆周的第二部分更靠近所述第一气体端口的圆周的第一部分设置。 圆周的第一部分构造成当气体分配板位于基板处理室内时朝向基板处理室的给定部分设置，使得方向阻挡壁设置在气体射流和给定部分之间 从而当气体射流被释放到衬底处理室中时，优先地将气体从衬底处理室的给定部分夹带到气体射流中。