公开(公告)号：US07910494B2

公开(公告)日：2011-03-22

申请号：US11277814

申请日：2006-03-29

申请人： Anthony Dip ,  Eric J. Malstrom

发明人： Anthony Dip ,  Eric J. Malstrom

IPC分类号： H01L21/31 ,  C30B23/03

CPC分类号： H01L21/0214 ,  C30B25/14 ,  C30B31/16 ,  C30B35/00 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3145 ,  H01L21/324 ,  H01L21/67109 ,  Y10S438/935

摘要： A gas delivery system for supplying a process gas from a gas supply to a thermal processing furnace, a thermal processing furnace equipped with the gas delivery system, and methods for delivering process gas to a thermal processing furnace. The gas delivery system comprises a plurality of regulators, such as mass flow controllers, in a process gas manifold coupling a gas supply with a thermal processing furnace. The regulators establish a corresponding plurality of flows of a process gas at a plurality of flow rates communicated by the process gas manifold to the thermal processing furnace. The gas delivery system may be a component of the thermal processing furnace that further includes a liner that surrounds a processing space inside the thermal processing furnace.

摘要翻译： 一种用于将气体从气体供给到热处理炉的气体输送系统，配备有气体输送系统的热处理炉，以及将处理气体输送到热处理炉的方法。 气体输送系统包括多个调节器，例如质量流量控制器，其在将气体供应与热处理炉连接的工艺气体歧管中。 调节器以工艺气体歧管连接到热处理炉的多个流速建立相应的多个工艺气体流。 气体输送系统可以是热处理炉的组件，其还包括围绕热处理炉内的处理空间的衬套。

公开(公告)号：US5938840A

公开(公告)日：1999-08-17

申请号：US036780

申请日：1998-03-09

申请人： Hitoshi Habuka ,  Masanori Mayuzumi ,  Naoto Tate ,  Masatake Katayama

发明人： Hitoshi Habuka ,  Masanori Mayuzumi ,  Naoto Tate ,  Masatake Katayama

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  C30B23/03

CPC分类号： C23C16/45506 ,  C23C16/455 ,  C30B25/14 ,  Y10T117/10

摘要： In the formation of a thin film on the surface of a semiconductor crystal substrate by using a horizontal type vapor phase growth apparatus, the distribution of the thickness and resistivity of the thin film can be properly obtained by adjusting the concentration distribution of the raw material gas in the mixture gas in the width direction of the reaction vessel over the substrate surface. And in the reaction vessel, carrier gas is supplied from the position close to the transfer port of the substrate, and raw material gas is supplied from the position located in the downstream side of a vortex generation region caused by the flow of the carrier gas.

摘要翻译： 通过使用水平型气相生长装置在半导体晶体基板的表面上形成薄膜，可以通过调整原料气体的浓度分布来适当地获得薄膜的厚度和电阻率的分布 在反应容器的宽度方向上的混合气体的基板表面上。 在反应容器中，从靠近基板的输送口的位置供给载气，从由载气流动引起的涡流产生区域的下游侧的位置供给原料气体。

公开(公告)号：US5755878A

公开(公告)日：1998-05-26

申请号：US546867

申请日：1995-10-23

申请人： Hitoshi Habuka ,  Masanori Mayuzumi ,  Naoto Tate ,  Masatake Katayama

发明人： Hitoshi Habuka ,  Masanori Mayuzumi ,  Naoto Tate ,  Masatake Katayama

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  C30B23/03

CPC分类号： C23C16/45506 ,  C23C16/455 ,  C30B25/14 ,  Y10T117/10

摘要： In the formation of a thin film on the surface of a semiconductor crystal substrate by using a horizontal type vapor phase growth apparatus, the distribution of the thickness and resistivity of the thin film can be properly obtained by adjusting the concentration distribution of the raw material gas in the mixture gas in the width direction of the reaction vessel over the substrate surface. And in the reaction vessel, carrier gas is supplied from the position close to the transfer port of the substrate, and raw material gas is supplied from the position located in the downstream side of a vortex generation region caused by the flow of the carrier gas.