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公开(公告)号：US06521184B1
公开(公告)日：2003-02-18
申请号：US09589011
申请日：2000-06-07
IPC分类号： G01N2706
CPC分类号： C12Q1/58 , G01N27/021 , G01N33/493 , Y10T436/171538 , Y10T436/25
摘要： Methods and apparatus for measuring the concentration of decomposable substances, such as urea, are disclosed. The disclosed methods include adding a gaseous buffer, such as CO2, to the solution containing the decomposable compound, measuring the conductivity of the solution, decomposing the decomposable compound, measuring the conductivity of the thus-decomposed compound solution, and calculating the differential conductivities between the two measured solutions. The apparatus for carrying out these methods are also disclosed.
摘要翻译： 公开了用于测量可分解物质如尿素的浓度的方法和装置。 所公开的方法包括向含有可分解化合物的溶液中加入气态缓冲液，例如CO 2，测量溶液的电导率，分解可分解化合物，测量这样分解的化合物溶液的电导率，并计算 两个测量的解决方案。 还公开了用于实施这些方法的装置。
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公开(公告)号：US06210972B1
公开(公告)日：2001-04-03
申请号：US09065071
申请日：1998-06-09
IPC分类号： G01N2706
CPC分类号： G01N27/20 , G01N15/1031 , G01N2015/1062
摘要： A microelectrical resistance tomography system comprising one or more sensors, each sensor including a wafer substrate of electrically insulating material having an aperture bounding a fluid flow path through a tube and a plurality of sensor electrodes on the substrate disposed circumferentially around the aperture so as to contact the fluid.
摘要翻译： 一种包括一个或多个传感器的微电阻层析摄影系统，每个传感器包括电绝缘材料的晶片衬底，该晶片衬底具有界定通过管的流体流动通道的孔径，以及在所述衬底周围设置的多个传感器电极，以便接触 流体。
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公开(公告)号：US06686751B1
公开(公告)日：2004-02-03
申请号：US09926195
申请日：2001-09-21
申请人： Takayuki Saito , Syu Nakanishi , Kanroku Chounan
发明人： Takayuki Saito , Syu Nakanishi , Kanroku Chounan
IPC分类号： G01N2706
CPC分类号： G01N27/06 , G01N33/182
摘要： The present invention provide a method and an apparatus for detecting anions in water which does not require replacement of ion exchange resins and the like and can perform precise measurement at low cost in a simple operation. The apparatus for detecting anions in water according to the present invention is an apparatus for detecting anions in water with the use of an electric conductivity cell and is constituted by an electrolyzer having an anode chamber having an anode plate and a cation chamber having a cathode plate via a cation exchange membrane, a direct-current power unit for applying a direct-current voltage between the anode and the cathode of the electrolyzer and an electric conductivity cell for measuring the electric conductivity of a sample water, and a flow passage for introducing a sample water into the anode chamber and a treated water flow passage for discharging the treated water which has been subjected to electrolytic treatment in the anode chamber which are connected to the anode chamber, respectively, and the treated water flow passage being connected to the cathode chamber via an electric conductivity cell.
摘要翻译： 本发明提供一种用于检测水中阴离子的方法和装置，其不需要更换离子交换树脂等，并且可以在简单的操作中以低成本执行精确的测量。 根据本发明的用于检测水中阴离子的装置是一种使用电导电池检测水中阴离子的装置，由具有阳极室和阳极室的电解槽构成，阳极室具有阴极板 通过阳离子交换膜，用于在电解槽的阳极和阴极之间施加直流电压的直流电力单元和用于测量样品水的电导率的电导池，以及用于引入 将水进入阳极室和经处理的水流通道，用于分别在与阳极室连接的阳极室中排出经过电解处理的处理水，处理过的水流通道连接到阴极室 通过电导电池。
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公开(公告)号：US06616895B2
公开(公告)日：2003-09-09
申请号：US09815461
申请日：2001-03-23
IPC分类号： G01N2706
CPC分类号： G01N33/48721 , B81C1/00087 , Y10S977/721 , Y10S977/781
摘要： A solid state device is formed through thin film deposition techniques which results in a self-supporting thin film layer that can have a precisely defined channel bored therethrough. The device is useful in the chacterization of polymer molecules by measuring changes in various electrical characteristics as molecules pass through the channel. To form the device, a thin film layer having various patterns of electrically conductive leads are formed on a silicon substrate. Using standard lithography techniques, a relatively large or micro-scale aperture is bored through the silicon substrate which in turn exposes a portion of the thin film layer. This process does not affect the thin film. Subsequently, a high precision material removal process is used (such as a focused ion beam) to bore a precise nano-scale aperture through the thin film layer that coincides with the removed section of the silicon substrate.
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