公开(公告)号：US07816195B2

公开(公告)日：2010-10-19

申请号：US12041014

申请日：2008-03-03

申请人： Shunpei Yamazaki ,  Naoto Kusumoto ,  Hideto Ohnuma ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Naoto Kusumoto ,  Hideto Ohnuma ,  Koichiro Tanaka

IPC分类号： H01L21/00

CPC分类号： H01L27/127 ,  G02F1/13454 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78696

摘要： A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold voltage. In a further aspect, a control film that is removable in a later step is formed on the surface of the channel forming region of a TFT, and doping is performed from above the control film.

摘要翻译： 具有高阈值电压的TFT连接到构成CMOS电路的每个TFT的源电极。 在另一方面，像素薄膜晶体管被构造成使得离栅极线驱动电路更远的薄膜晶体管具有较低的阈值电压。 在另一方面，在TFT的沟道形成区域的表面上形成可在后续步骤中移除的控制膜，并且从控制膜的上方进行掺杂。

公开(公告)号：US07638377B2

公开(公告)日：2009-12-29

申请号：US11710658

申请日：2007-02-23

申请人： Koichiro Tanaka ,  Hideto Ohnuma ,  Chiho Kokubo

发明人： Koichiro Tanaka ,  Hideto Ohnuma ,  Chiho Kokubo

IPC分类号： H01L21/84

CPC分类号： H01L21/02422 ,  G02F1/13454 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645 ,  Y10S438/907

摘要： In a crystallization process of an amorphous semiconductor film, a first polycrystalline semiconductor film, in which amorphous regions are dotted within the continuous crystal region, is obtained by performing heat treatment after introducing a metallic element which promotes crystallization on the amorphous semiconductor film. At this point, the amorphous regions are kept within a predetermined range. A laser beam having a wave length region, which can give more energy to the amorphous region than to the crystal region, is irradiated to the first polycrystalline semiconductor film, it is possible to crystallize the amorphous region without destroying the crystal region. If a TFT is manufactured based on a second polycrystalline semiconductor film, which is obtained through the above-mentioned crystallization processes, the TFT with high electric characteristics and less fluctuation can be obtained.

摘要翻译： 在非晶半导体膜的结晶化处理中，通过在导致在非晶半导体膜上促进结晶的金属元素引入后进行热处理，得到非晶区域在连续晶体区域内点缀的第一多晶半导体膜。 此时，非晶区域保持在预定范围内。 具有能够向非晶区域提供比晶体区域更多能量的波长区域的激光束被照射到第一多晶半导体膜，可以使非晶区域结晶而不破坏晶体区域。 如果通过上述结晶工艺获得的基于第二多晶半导体膜制造TFT，则可以获得具有高电特性和较小波动的TFT。

公开(公告)号：US06518102B1

公开(公告)日：2003-02-11

申请号：US08928750

申请日：1997-09-12

申请人： Koichiro Tanaka ,  Hideto Ohnuma

发明人： Koichiro Tanaka ,  Hideto Ohnuma

IPC分类号： H01L21335

CPC分类号： H01L29/78621 ,  H01L29/66757

摘要： A method for producing a thin-film transistor by using a crystalline silicon film that has been formed by using nickel as a metal element for accelerating crystallization of silicon. In forming source and drain regions, phosphorus as an element for gettering nickel is introduced therein by ion implantation. Nickel gettering is effected by annealing. For example, in the case of producing a P-channel thin-film transistor, both phosphorus and boron are used. Boron determines a conductivity type, and phosphorus is used as a gettering material.

摘要翻译： 通过使用通过使用镍作为加速硅的结晶的金属元素形成的结晶硅膜来制造薄膜晶体管的方法。 在形成源极和漏极区域中，通过离子注入引入作为吸杂镍的元素的磷。 镍的除气是通过退火进行的。 例如，在制造P沟道薄膜晶体管的情况下，使用磷和硼。 硼决定导电类型，磷用作吸气材料。

公开(公告)号：US20080213954A1

公开(公告)日：2008-09-04

申请号：US12041014

申请日：2008-03-03

申请人： Shunpei Yamazaki ,  Naoto Kusumoto ,  Hideto Ohnuma ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Naoto Kusumoto ,  Hideto Ohnuma ,  Koichiro Tanaka

IPC分类号： H01L21/336

CPC分类号： H01L27/127 ,  G02F1/13454 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78696

摘要： A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold voltage. In a further aspect, a control film that is removable in a later step is formed on the surface of the channel forming region of a TFT, and doping is performed from above the control film.

摘要翻译： 具有高阈值电压的TFT连接到构成CMOS电路的每个TFT的源电极。 在另一方面，像素薄膜晶体管被构造成使得离栅极线驱动电路更远的薄膜晶体管具有较低的阈值电压。 在另一方面，在TFT的沟道形成区域的表面上形成可在后续步骤中移除的控制膜，并且从控制膜的上方进行掺杂。

公开(公告)号：US20070184593A1

公开(公告)日：2007-08-09

申请号：US11710658

申请日：2007-02-23

申请人： Koichiro Tanaka ,  Hideto Ohnuma ,  Chiho Kokubo

发明人： Koichiro Tanaka ,  Hideto Ohnuma ,  Chiho Kokubo

IPC分类号： H01L21/84 ,  H01L21/20 ,  H01L21/00

CPC分类号： H01L21/02422 ,  G02F1/13454 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645 ,  Y10S438/907

摘要： In a crystallization process of an amorphous semiconductor film, a first polycrystalline semiconductor film, in which amorphous regions are dotted within the continuous crystal region, is obtained by performing heat treatment after introducing a metallic element which promotes crystallization on the amorphous semiconductor film. At this point, the amorphous regions are kept within a predetermined range. A laser beam having a wave length region, which can give more energy to the amorphous region than to the crystal region, is irradiated to the first polycrystalline semiconductor film, it is possible to crystallize the amorphous region without destroying the crystal region. If a TFT is manufactured based on a second polycrystalline semiconductor film, which is obtained through the above-mentioned crystallization processes, the TFT with high electric characteristics and less fluctuation can be obtained.

摘要翻译： 在非晶半导体膜的结晶化处理中，通过在导致在非晶半导体膜上促进结晶的金属元素引入后进行热处理，得到非晶区域在连续晶体区域内点缀的第一多晶半导体膜。 此时，非晶区域保持在预定范围内。 具有能够向非晶区域提供比晶体区域更多能量的波长区域的激光束被照射到第一多晶半导体膜，可以使非晶区域结晶而不破坏晶体区域。 如果通过上述结晶工艺获得的基于第二多晶半导体膜制造TFT，则可以获得具有高电特性和较小波动的TFT。

公开(公告)号：US06916693B2

公开(公告)日：2005-07-12

申请号：US09799373

申请日：2001-03-05

申请人： Hideto Ohnuma ,  Chiho Kokubo ,  Koichiro Tanaka ,  Naoki Makita ,  Shuhei Tsuchimoto

发明人： Hideto Ohnuma ,  Chiho Kokubo ,  Koichiro Tanaka ,  Naoki Makita ,  Shuhei Tsuchimoto

IPC分类号： H01L21/20 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L21/00

CPC分类号： H01L21/02488 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/04

摘要： In a crystallization process of an amorphous semiconductor film, a first crystalline semiconductor film having crystalline regions, and dotted with amorphous regions within the crystalline regions, is obtained by performing heat treatment processing after introducing a metallic element which promotes crystallization on the amorphous semiconductor film. The amorphous regions are kept within a predetermined range by regulating the heat treatment conditions at this point. Laser annealing is performed on the first crystalline semiconductor film, to form a second crystalline semiconductor film. Electrical characteristics for a TFT manufactured based on the second crystalline semiconductor film can be obtained having less dispersion.

摘要翻译： 在非晶半导体膜的结晶工艺中，通过在将非晶半导体膜上促进结晶的金属元素引入导入之后，通过进行热处理来获得具有结晶区域并且在结晶区域内具有非晶区域的第一晶体半导体膜。 通过调节此时的热处理条件，将非晶区域保持在预定范围内。 对第一结晶半导体膜进行激光退火，形成第二结晶半导体膜。 可以获得具有较少分散性的基于第二结晶半导体膜制造的TFT的电特性。

公开(公告)号：US06353244B1

公开(公告)日：2002-03-05

申请号：US08908281

申请日：1997-08-07

申请人： Shunpei Yamazaki ,  Naoto Kusumoto ,  Hideto Ohnuma ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Naoto Kusumoto ,  Hideto Ohnuma ,  Koichiro Tanaka

IPC分类号： H01L2701

CPC分类号： H01L27/1203 ,  G02F1/13454

摘要： A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold voltage. In a further aspect, a control film that is removable in a later step is formed on the surface of the channel forming region of a TFT, and doping is performed from above the control film.

摘要翻译： 具有高阈值电压的TFT连接到构成CMOS电路的每个TFT的源电极。 在另一方面，像素薄膜晶体管被构造成使得离栅极线驱动电路更远的薄膜晶体管具有较低的阈值电压。 在另一方面，在TFT的沟道形成区域的表面上形成可在后续步骤中移除的控制膜，并且从控制膜的上方进行掺杂。

公开(公告)号：US08574976B2

公开(公告)日：2013-11-05

申请号：US12904235

申请日：2010-10-14

申请人： Shunpei Yamazaki ,  Naoto Kusumoto ,  Hideto Ohnuma ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Naoto Kusumoto ,  Hideto Ohnuma ,  Koichiro Tanaka

IPC分类号： H01L21/00

CPC分类号： H01L27/127 ,  G02F1/13454 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78696

摘要： A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold voltage. In a further aspect, a control film that is removable in a later step is formed on the surface of the channel forming region of a TFT, and doping is performed from above the control film.

公开(公告)号：US07098084B2

公开(公告)日：2006-08-29

申请号：US09800627

申请日：2001-03-07

申请人： Koichiro Tanaka ,  Hideto Ohnuma ,  Chiho Kokubo

发明人： Koichiro Tanaka ,  Hideto Ohnuma ,  Chiho Kokubo

IPC分类号： H01L21/84

CPC分类号： H01L21/02422 ,  G02F1/13454 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645 ,  Y10S438/907

摘要： In a crystallization process of an amorphous semiconductor film, a first polycrystalline semiconductor film, in which amorphous regions are dotted within the continuous crystal region, is obtained by performing heat treatment after introducing a metallic element which promotes crystallization on the amorphous semiconductor film. At this point, the amorphous regions are kept within a predetermined range. A laser beam having a wave length region, which can give more energy to the amorphous region than to the crystal region, is irradiated to the first polycrystalline semiconductor film, it is possible to crystallize the amorphous region without destroying the crystal region. If a TFT is manufactured based on a second polycrystalline semiconductor film, which is obtained through the above-mentioned crystallization processes, the TFT with high electric characteristics and less fluctuation can be obtained.

公开(公告)号：US20050074987A1

公开(公告)日：2005-04-07

申请号：US10968093

申请日：2004-10-20

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Hideto Ohnuma ,  Osamu Nakamura ,  Koichiro Tanaka ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Hideto Ohnuma ,  Osamu Nakamura ,  Koichiro Tanaka ,  Yasuyuki Arai

IPC分类号： H01L21/00 ,  H01L21/268 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/00

CPC分类号： H01L21/268 ,  H01L21/3226 ,  H01L21/67103 ,  H01L21/67115 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78633 ,  H01L2029/7863

摘要： The present invention is characterized in that gettering is performed such that impurity regions to which a noble gas element is added are formed in a semiconductor film and the metallic element included in the semiconductor film is segregated into the impurity regions by laser annealing. Also, a reflector is provided under a substrate on which a semiconductor film is formed. When laser light transmitted through the semiconductor film substrate is irradiated from the front side of the substrate, the laser beam is reflected by the reflector and thus the laser light can be irradiated to the semiconductor film from the read side thereof. Laser light can be also irradiated to low concentration impurity regions overlapped with a portion the gate electrode. Thus, an effective energy density in the semiconductor film is increased to thereby effect recovery of crystallinity and activation of the impurity element.

摘要翻译： 本发明的特征在于，在半导体膜中形成添加有惰性气体元素的杂质区域的吸气，通过激光退火将包含在半导体膜中的金属元素分离成杂质区域。 另外，在形成有半导体膜的基板的下方设置有反射体。 当透过半导体薄膜基板的激光从基板的正面照射时，激光束被反射体反射，因此激光可以从其读出侧照射到半导体薄膜上。 激光也可以照射到与栅电极的一部分重叠的低浓度杂质区域。 因此，半导体膜中的有效能量密度增加，从而实现结晶性的恢复和杂质元素的活化。