公开(公告)号：US08410552B2

公开(公告)日：2013-04-02

申请号：US12855744

申请日：2010-08-13

申请人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

IPC分类号： H01L29/066

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/66462

摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent schottky contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of Inx2Aly2Gaz2N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is smaller than an In composition ratio of a portion other than the near-surface portion.

摘要翻译： 提供了能够实现具有优异的肖特基接触特性以及令人满意的器件特性的半导体器件的外延衬底。 在基底基板上，形成由至少含有Al和Ga的第一III族氮化物形成的沟道层，并且具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）的组成。 在沟道层上，形成由至少包含In和Al并且具有In x2 Al y2 Ga z2 N（x2 + y2 + z2 = 1）的组成的第二III族氮化物形成的阻挡层，使得近表面的In组成比 部分比除了近表面部分之外的部分的In组成比小。

公开(公告)号：US08450802B2

公开(公告)日：2013-05-28

申请号：US13054647

申请日：2009-07-20

申请人： Johannes Adrianus Maria De Boet ,  Henk Jan Peuscher ,  Paul Bron ,  Stephan Jo Cecile Henri Theeuwen

发明人： Johannes Adrianus Maria De Boet ,  Henk Jan Peuscher ,  Paul Bron ,  Stephan Jo Cecile Henri Theeuwen

IPC分类号： H01L29/066

CPC分类号： H01L29/7835 ,  H01L29/0692 ,  H01L29/402 ,  H01L29/404 ,  H01L29/41758

摘要： Laterally diffused metal oxide semiconductor transistor for a radio frequency-power: amplifier comprising a drain finger (25,27) which drain finger is connected to a stack of one or more metal interconnect layers, (123,61,59,125) wherein a metal interconnect layer (123) of said stack is connected to a drain region (25) on the substrate, wherein said stack comprises a field plate (123, 125, 121) adapted to reduce the maximum magnitude of the electric field between the drain and the substrate and overlying the tip of said drain finger.

摘要翻译： 用于射频功率放大器的横向扩散金属氧化物半导体晶体管包括：漏极指状物（25,27），该漏极指状物连接到一个或多个金属互连层的叠层（123,61,59,125），其中金属互连 所述堆叠的层（123）连接到衬底上的漏极区（25），其中所述堆叠包括适于减小漏极和衬底之间的电场的最大幅度的场板（123,125,121） 并覆盖所述排水手指的尖端。