公开(公告)号：US5677557A

公开(公告)日：1997-10-14

申请号：US742129

申请日：1996-10-31

申请人： Shou-Gwo Wuu ,  Chen-Jong Wang ,  Mong-Song Liang ,  Chung-Hui Su

发明人： Shou-Gwo Wuu ,  Chen-Jong Wang ,  Mong-Song Liang ,  Chung-Hui Su

IPC分类号： H01L21/311 ,  H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L29/76 ,  H01L31/113 ,  H01L29/54 ,  H01L31/262

CPC分类号： H01L21/76897 ,  H01L21/31116 ,  H01L21/76801 ,  H01L23/485 ,  H01L2924/0002

摘要： A method for fabricating buried metal plug structures for multi-polysilicon layer interconnects and for concurrently making metal plugs on semiconductor integrated circuits, such as DRAM and SRAM, was achieved. The method involved forming contact opening in an insulating layer over opening in a patterned polysilicon layer. The opening in the polysilicon layer aligned over source/drain contact areas on the substrate and providing a means for forming self-aligned contact openings. Buried metal plugs in the contact openings form interconnects between the polysilicon layer and the source/drains. And, by merging the process steps, concurrently forming metal plug interconnects for contacts to semiconductor devices and first level metal. The process is applicable to the formation of bit line contacts on DRAM and SRAM circuits and simultaneously form the peripheral contact on the chip.

摘要翻译： 实现了一种用于多晶硅层互连的埋地金属插塞结构的制造方法以及用于同时制造诸如DRAM和SRAM的半导体集成电路上的金属插头的方法。 该方法涉及在图案化的多晶硅层中的开口上形成绝缘层中的接触开口。 多晶硅层中的开口对准衬底上的源/漏接触区域，并提供用于形成自对准接触开口的装置。 接触开口中埋入的金属塞形成多晶硅层与源极/漏极之间的互连。 并且，通过合并工艺步骤，同时形成用于触点的金属插头互连件到半导体器件和第一级金属。 该过程适用于在DRAM和SRAM电路上形成位线触点，同时在芯片上形成周边触点。