公开(公告)号：US06492261B2

公开(公告)日：2002-12-10

申请号：US09753108

申请日：2000-12-30

申请人： Ilan Gavish ,  Yuval Greenzweig

发明人： Ilan Gavish ,  Yuval Greenzweig

IPC分类号： H01L714763

CPC分类号： C23C16/16 ,  C23C16/047 ,  C23C16/486 ,  C23C16/52 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76886 ,  H01L21/76892

摘要： Introducing at least one metal such as cobalt, molybdenum, metal carbonyl, tungsten, platinum, or other suitable metal to a focused ion beam. Introducing the focused ion beam to a substrate within a processing chamber. Forming at least one layer over a substrate. Applying heat to the layer by, for example, a laser.

摘要翻译： 将至少一种金属如钴，钼，金属羰基，钨，铂或其他合适的金属引入聚焦离子束。 将聚焦离子束引入处理室内的衬底。 在衬底上形成至少一层。 通过例如激光将热量施加到该层。

公开(公告)号：US06277730B1

公开(公告)日：2001-08-21

申请号：US09249844

申请日：1999-02-16

申请人： Hiroshi Yuasa ,  Satoshi Ueda

发明人： Hiroshi Yuasa ,  Satoshi Ueda

IPC分类号： H01L714763

CPC分类号： H01L21/76843 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A plurality of lower-level metal interconnects are formed over a semiconductor substrate. A first fluorine-containing insulating film, made of a fluorine-doped insulator, is formed to fill in gaps between adjacent ones of the lower-level metal interconnects over the semiconductor substrate. An interlevel insulating film is formed over the lower-level metal interconnects and the first fluorine-containing insulating film. And a plurality of upper-level metal interconnects are formed on the interlevel insulating film. The interlevel insulating film includes: a second fluorine-containing insulating film made of a fluorine-doped insulator; and a silicon-rich insulating film containing a larger quantity of silicon than a quantity defined by stoichiometry.

摘要翻译： 多个下层金属互连形成在半导体衬底之上。 形成由氟掺杂绝缘体制成的第一含氟绝缘膜，以填充半导体衬底上相邻的下级金属互连之间的间隙。 在下层金属互连和第一含氟绝缘膜上形成层间绝缘膜。 并且在层间绝缘膜上形成多个上层金属互连。 层间绝缘膜包括：由氟掺杂绝缘体制成的第二含氟绝缘膜; 以及含有比化学计量规定的量大的硅的富硅绝缘膜。