Semiconductor device and method for fabricating the same
    1.
    发明授权
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号:US06365959B2

    公开(公告)日:2002-04-02

    申请号:US09840883

    申请日:2001-04-25

    IPC分类号: H01L2358

    摘要: A plurality of lower-level metal interconnects are formed over a semiconductor substrate. A first fluorine-containing insulating film, made of a fluorine-doped insulator, is formed to fill in gaps between adjacent ones of the lower-level metal interconnects over the semiconductor substrate. An interlevel insulating film is formed over the lower-level metal interconnects and the first fluorine-containing insulating film. And a plurality of upper-level metal interconnects are formed on the interlevel insulating film. The interlevel insulating film includes: a second fluorine-containing insulating film made of a fluorine-doped insulator; and a silicon-rich insulating film containing a larger quantity of silicon than a quantity defined by stoichiometry.

    摘要翻译: 多个下层金属互连形成在半导体衬底之上。 形成由氟掺杂绝缘体制成的第一含氟绝缘膜,以填充半导体衬底上相邻的下级金属互连之间的间隙。 在下层金属互连和第一含氟绝缘膜上形成层间绝缘膜。 并且在层间绝缘膜上形成多个上层金属互连。 层间绝缘膜包括:由氟掺杂绝缘体制成的第二含氟绝缘膜; 以及含有比化学计量规定的量大的硅的富硅绝缘膜。

    Method of fabricating interconnects utilizing fluorine doped insulators and barrier layers
    2.
    发明授权
    Method of fabricating interconnects utilizing fluorine doped insulators and barrier layers 失效
    使用氟掺杂绝缘体和阻挡层制造互连的方法

    公开(公告)号:US06277730B1

    公开(公告)日:2001-08-21

    申请号:US09249844

    申请日:1999-02-16

    IPC分类号: H01L714763

    摘要: A plurality of lower-level metal interconnects are formed over a semiconductor substrate. A first fluorine-containing insulating film, made of a fluorine-doped insulator, is formed to fill in gaps between adjacent ones of the lower-level metal interconnects over the semiconductor substrate. An interlevel insulating film is formed over the lower-level metal interconnects and the first fluorine-containing insulating film. And a plurality of upper-level metal interconnects are formed on the interlevel insulating film. The interlevel insulating film includes: a second fluorine-containing insulating film made of a fluorine-doped insulator; and a silicon-rich insulating film containing a larger quantity of silicon than a quantity defined by stoichiometry.

    摘要翻译: 多个下层金属互连形成在半导体衬底之上。 形成由氟掺杂绝缘体制成的第一含氟绝缘膜,以填充半导体衬底上相邻的下级金属互连之间的间隙。 在下层金属互连和第一含氟绝缘膜上形成层间绝缘膜。 并且在层间绝缘膜上形成多个上层金属互连。 层间绝缘膜包括:由氟掺杂绝缘体制成的第二含氟绝缘膜; 以及含有比化学计量规定的量大的硅的富硅绝缘膜。

    IMAGE FORMING APPARATUS
    5.
    发明申请
    IMAGE FORMING APPARATUS 有权
    图像形成装置

    公开(公告)号:US20140029961A1

    公开(公告)日:2014-01-30

    申请号:US13951007

    申请日:2013-07-25

    IPC分类号: G03G15/00

    摘要: An image forming apparatus includes an image forming unit that forms an image on a recording medium; a width detector that detects positions of side edges of the recording medium in a width direction, which is orthogonal to a conveying direction in which the recording medium is conveyed, at multiple detection positions along the conveying direction; a shape calculator that calculates angles between the conveying direction and straight lines each connecting the positions of the same side edge detected at the multiple detection positions and calculates a shape of the recording medium based on the angles; and a correction unit that corrects image data of the image to be formed by the image forming unit based on the calculated shape of the recording medium.

    摘要翻译: 图像形成装置包括在记录介质上形成图像的图像形成单元; 宽度检测器,沿着所述传送方向检测与所述记录介质被传送的传送方向正交的宽度方向上的所述记录介质的侧边缘的位置; 计算器,其计算输送方向与连接在多个检测位置检测到的同一侧边缘的位置的直线之间的角度,并基于角度计算记录介质的形状; 以及校正单元,其基于计算出的记录介质的形状校正由图像形成单元形成的图像的图像数据。

    BACKLIGHT DEVICE AND DISPLAY DEVICE
    8.
    发明申请
    BACKLIGHT DEVICE AND DISPLAY DEVICE 审中-公开
    背光装置和显示装置

    公开(公告)号:US20130021820A1

    公开(公告)日:2013-01-24

    申请号:US13639549

    申请日:2011-02-15

    申请人: Satoshi Ueda

    发明人: Satoshi Ueda

    IPC分类号: G09F13/18 F21V13/02 F21V8/00

    摘要: Provided is a backlight device which can reduce the size and weight of light-guiding members while also improving light use efficiency. The backlight device (10) is provided with a light-guiding plate (11) and a plurality of LEDs (12) which irradiate the light-guiding plate with light. The light-guiding plate includes a plurality of side surfaces (11a) and a plurality of light incident surfaces (11b) which are formed in a plurality of corners and are arranged opposite the LEDs. The side surfaces are arranged between adjacent light incident surfaces and are formed in convex shapes.

    摘要翻译: 提供一种能够降低导光部件的尺寸和重量的背光装置,同时也提高光的使用效率。 背光装置(10)具有导光板(11)和向导光板照射光的多个LED(12)。 导光板包括多个侧表面(11a)和多个光入射表面(11b),多个光入射表面(11b)形成在多个角部并且与LED相对地布置。 侧表面布置在相邻的光入射表面之间并且形成为凸形。

    VARIABLE FILTER AND COMMUNICATION APPARATUS
    9.
    发明申请
    VARIABLE FILTER AND COMMUNICATION APPARATUS 有权
    可变过滤器和通讯设备

    公开(公告)号:US20120229231A1

    公开(公告)日:2012-09-13

    申请号:US13415938

    申请日:2012-03-09

    IPC分类号: H01P1/203

    CPC分类号: H01P1/20327 H01P7/088

    摘要: A variable filter includes, on a dielectric substrate including ground conductor, first resonator including a transmission line connected to input terminal, second resonator including a transmission line connected to output terminal, and coupling portion including a transmission line having one end connected to the first and second resonators and another end being an open end, or structure having one end connected to the first and second resonators, including a serial connection of a transmission line and a variable capacitor, another end of the variable capacitor connected to the ground conductor, and adjusting means capable of changing electric length, in the first and second resonators and the coupling portion, wherein pass band width can be changed by changing ratio of electric transmission length of the coupling portion to electric transmission lengths of transmission line including the coupling portion, and the first and second resonators.

    摘要翻译: 可变滤波器包括在包括接地导体的电介质基板上,包括连接到输入端子的传输线的第一谐振器,包括连接到输出端子的传输线的第二谐振器和包括一端连接到第一和/ 第二谐振器,另一端是开口端,或具有连接到第一和第二谐振器的一端的结构,包括传输线和可变电容器的串联连接,连接到接地导体的可变电容器的另一端,以及调整 在第一和第二谐振器和耦合部分中能够改变电长度的装置,其中可以通过改变耦合部分的电传输长度与包括耦合部分的传输线的电传输长度的比率来改变通带宽度, 第一和第二谐振器。

    Micro-oscillating element and method of making the same
    10.
    发明授权
    Micro-oscillating element and method of making the same 有权
    微振动元件及其制造方法

    公开(公告)号:US08142670B2

    公开(公告)日:2012-03-27

    申请号:US12292540

    申请日:2008-11-20

    IPC分类号: B44C1/22 C25F3/00

    摘要: A micro-oscillating element includes a frame, a movable functional portion, and a torsional joint for joining the frame and the functional portion. The micro-oscillating element also includes first and second comb-tooth electrodes for generation of the driving force for the oscillating motion of the movable functional portion about the torsional joint. The first comb-tooth electrode includes a plurality of first electrode teeth each having a first conductor, an insulator and a second conductor laminated in the direction of the oscillating motion, where the first conductor and the second conductor are electrically connected with each other. The second comb-tooth electrode includes a plurality of second electrode teeth caused not to face the second conductor but to face the first conductor of the first electrode teeth during non-operation. The second electrode teeth are longer than the first conductor in the direction of the oscillating motion.

    摘要翻译: 微振动元件包括框架,可移动功能部分和用于连接框架和功能部分的扭转接头。 微振动元件还包括用于产生用于可动功能部分围绕扭转接头的摆动运动的驱动力的第一和第二梳齿电极。 第一梳齿电极包括多个第一电极齿,每个第一电极齿具有沿振荡运动方向层叠的第一导体,绝缘体和第二导体,其中第一导体和第二导体彼此电连接。 第二梳齿电极包括在不操作期间不面向第二导体而是面对第一电极齿的第一导体的多个第二电极齿。 第二电极齿在摆动运动方向上比第一导体长。