公开(公告)号：US10020200B1

公开(公告)日：2018-07-10

申请号：US14966165

申请日：2015-12-11

申请人： Multibeam Corporation

发明人： Kevin M. Monahan ,  Theodore A. Prescop ,  Michael C. Smayling ,  David K. Lam

IPC分类号： H01L21/3065 ,  H01L21/02 ,  H01L21/308 ,  H01L21/66

CPC分类号： H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

摘要： Methods and systems for direct atomic layer etching and deposition on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform atomic layer etch and atomic layer deposition, expressing pattern with selected 3D-structure. Reducing the number of process steps in patterned atomic layer etch and deposition reduces manufacturing cycle time and increases yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding columns, and support superior, highly-configurable process execution and control.

公开(公告)号：US09951417B2

公开(公告)日：2018-04-24

申请号：US14507540

申请日：2014-10-06

申请人： FEI Company

发明人： Aurélien Philippe Jean Maclou Botman ,  Steven Randolph ,  Milos Toth

IPC分类号： C23C16/02 ,  C23C16/10 ,  C23C16/14 ,  C23C16/48 ,  C23C16/448 ,  C23C16/52

CPC分类号： C23C16/0263 ,  C23C16/10 ,  C23C16/14 ,  C23C16/4488 ,  C23C16/48 ,  C23C16/486 ,  C23C16/52

摘要： Material is deposited in a desired pattern by spontaneous deposition of precursor gas at regions of a surface that are prepared using a beam to provide conditions to support the initiation of the spontaneous reaction. Once the reaction is initiated, it continues in the absence of the beam at the regions of the surface at which the reaction was initiated.

公开(公告)号：US09617641B2

公开(公告)日：2017-04-11

申请号：US12814283

申请日：2010-06-11

申请人： Johannes Jacobus Lambertus Mulders

发明人： Johannes Jacobus Lambertus Mulders

IPC分类号： C23C18/14 ,  C23C18/08

CPC分类号： C23C18/14 ,  C23C16/047 ,  C23C16/06 ,  C23C16/18 ,  C23C16/486 ,  C23C16/487 ,  C23C18/08

摘要： The invention provides a method for providing an Au-containing layer onto a surface of a work piece, which method comprises: providing 510 a deposition fluid comprising Au(CO)Cl; depositing 520 the fluid on at least part of the surface of the work piece; and directing 530 a charged particle beam toward the surface of the work piece onto which at least part of the fluid is deposited to decompose Au(CO)Cl thereby forming the Au-containing layer on the surface of the work piece. By using Au(CO)Cl as a precursor for charged particle induced deposition, a gold Au layer may be deposited with a very high purity compared to methods known in the art.

公开(公告)号：US20170002455A1

公开(公告)日：2017-01-05

申请号：US15199690

申请日：2016-06-30

申请人： FEI Company

发明人： Aurelien Philippe Jean Maclou Botman

IPC分类号： C23C14/22 ,  C23C14/54

CPC分类号： C23C14/221 ,  C23C14/30 ,  C23C14/54 ,  C23C16/047 ,  C23C16/486 ,  H01J2237/31732

摘要： A method for planning a beam path for material deposition is provided in which a structure pattern having features of varying size is analyzed to determine the size of each feature. A beam path throughout the structure pattern is determined and the beam current required for each point in the structure pattern is configured. Configuring the beam current required for each point involves determining the acceptable beam dose for that point. Relatively small features require a low beam current for high accuracy and relatively large features can be formed using a higher beam current allowing faster deposition. Each feature in the structure pattern is deposited at the highest beam current acceptable to allow accurate deposition of the feature.

摘要翻译： 提供了一种用于规划材料沉积的光束路径的方法，其中分析具有不同大小的特征的结构图案以确定每个特征的尺寸。 确定整个结构图案中的光束路径，并且配置结构图案中的每个点所需的束电流。 配置每个点所需的束电流包括确定该点可接受的光束剂量。 相对小的特征需要较低的光束电流以获得高精度，并且可以使用较高的束电流形成较大的特征，从而允许更快的沉积。 结构图案中的每个特征以可接受的最高束电流沉积以允许特征的精确沉积。

公开(公告)号：US20160369400A1

公开(公告)日：2016-12-22

申请号：US14827752

申请日：2015-08-17

申请人： Dynetics, Inc.

发明人： James L. Maxwell ,  Nicholas Webb ,  James Allen

IPC分类号： C23C16/48 ,  C23C16/20 ,  C23C16/08 ,  D01F8/18 ,  C23C16/50 ,  C23C16/52

CPC分类号： C23C16/483 ,  C04B35/58 ,  C04B35/58007 ,  C04B35/58028 ,  C04B35/62272 ,  C04B35/62277 ,  C04B35/62286 ,  C04B2235/5296 ,  C23C16/08 ,  C23C16/20 ,  C23C16/4418 ,  C23C16/486 ,  C23C16/50 ,  C23C16/52 ,  D01F8/18 ,  D01F9/127 ,  D04H1/4242

摘要： The disclosed methods and apparatus improve the fabrication of solid fibers and microstructures. In many embodiments, the fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). The methods and systems generally employ the thermal diffusion/Soret effect to concentrate the low molar mass precursor at a reaction zone, where the presence of the high molar mass precursor contributes to this concentration, and may also contribute to the reaction and insulate the reaction zone, thereby achieving higher fiber growth rates and/or reduced energy/heat expenditures together with reduced homogeneous nucleation. In some embodiments, the invention also relates to the permanent or semi-permanent recording and/or reading of information on or within fabricated fibers and microstructures. In some embodiments, the invention also relates to the fabrication of certain functionally-shaped fibers and microstructures. In some embodiments, the invention may also utilize laser beam profiling to enhance fiber and microstructure fabrication.

摘要翻译： 所公开的方法和装置改善了固体纤维和微结构的制造。 在许多实施方案中，制造是使用一种或多种低摩尔质量前体与一种或多种高摩尔质量前体组合从气态，固体，半固体，液体，临界和超临界混合物。 所述方法和系统通常采用热扩散/反应效应将低摩尔质量前体浓缩在反应区，其中高摩尔质量前体的存在有助于该浓度，并且还可以有助于反应并使反应区绝缘 ，从而实现更高的纤维生长速率和/或降低的能量/热量支出以及减少的均匀成核。 在一些实施例中，本发明还涉及在制造的纤维和微结构之上或之内的信息的永久或半永久性记录和/或读取。 在一些实施例中，本发明还涉及某些功能形状的纤维和微结构的制造。 在一些实施例中，本发明还可以利用激光束轮廓来增强光纤和微结构的制造。

公开(公告)号：US20160163507A1

公开(公告)日：2016-06-09

申请号：US14956725

申请日：2015-12-02

申请人： JEOL Ltd.

发明人： Misumi Kadoi

IPC分类号： H01J37/304 ,  C23C14/34

CPC分类号： H01J37/304 ,  C23C14/221 ,  C23C16/047 ,  C23C16/486 ,  C23C16/52 ,  H01J37/302 ,  H01J37/3178 ,  H01J2237/30461 ,  H01J2237/30477 ,  H01J2237/31732 ,  H01J2237/31749

摘要： A deposition method is implemented in a focused ion beam system that supplies a compound gas to a specimen, and applies an ion beam to the specimen to deposit a deposition film, the deposition method including: a first deposition film-depositing step that deposits a first deposition film on the specimen using the ion beam that is defocused with respect to the specimen; and a second deposition film-depositing step that deposits a second deposition film on the first deposition film using the ion beam that is smaller in defocus amount than that used in the first deposition film-depositing step.

摘要翻译： 在聚焦离子束系统中实施沉积方法，所述聚焦离子束系统向样品供应复合气体，并将离子束施加到样品上以沉积沉积膜，所述沉积方法包括：沉积第一沉积步骤的第一沉积膜沉积步骤 使用相对于样品散焦的离子束在样品上的沉积膜; 以及第二沉积膜沉积步骤，其使用散焦量比在第一沉积膜沉积步骤中使用的离散量更小的离子束将第二沉积膜沉积在第一沉积膜上。

公开(公告)号：US20160071723A1

公开(公告)日：2016-03-10

申请号：US14937968

申请日：2015-11-11

申请人： International Business Machines Corporation

发明人： Oleg Gluschenkov ,  Ahmet S. Ozcan

IPC分类号： H01L21/02 ,  H01L21/3065

CPC分类号： H01L21/02057 ,  C23C14/02 ,  C23C16/0236 ,  C23C16/42 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/4582 ,  C23C16/486 ,  C23C16/52 ,  H01J37/30 ,  H01J37/3002 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/32449 ,  H01J2237/0812 ,  H01J2237/30472 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/334 ,  H01L21/02068 ,  H01L21/28506 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28575 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/67028

摘要： A method of performing in-situ cleaning of a substrate includes inserting a gas cluster ion beam into a processing chamber containing a substrate, the gas cluster ion beam includes a broad gas cluster ion bean that reaches an entire surface of the substrate. The entire surface of the substrate becomes substantially uniform after an exposure to the gas cluster ion beam.

摘要翻译： 对基板进行原位清洗的方法包括将气体簇离子束插入到含有基板的处理室中，气体簇离子束包括到达基板的整个表面的宽气体簇离子束。 在暴露于气体簇离子束之后，基板的整个表面变得基本均匀。

公开(公告)号：US09257273B2

公开(公告)日：2016-02-09

申请号：US13876274

申请日：2011-09-22

申请人： Yoshihiro Koyama ,  Anto Yasaka ,  Tatsuya Shimoda ,  Yasuo Matsuki ,  Ryo Kawajiri

发明人： Yoshihiro Koyama ,  Anto Yasaka ,  Tatsuya Shimoda ,  Yasuo Matsuki ,  Ryo Kawajiri

IPC分类号： H01L21/31 ,  H01L21/02 ,  H01J37/317 ,  C23C16/04 ,  C23C16/24 ,  C23C16/32 ,  C23C16/40 ,  C23C16/42 ,  C23C16/48 ,  C23C16/56 ,  H01L21/66 ,  H01L21/28 ,  H01L29/66

CPC分类号： H01L21/02263 ,  C23C16/045 ,  C23C16/24 ,  C23C16/325 ,  C23C16/401 ,  C23C16/42 ,  C23C16/486 ,  C23C16/487 ,  C23C16/56 ,  H01J37/3178 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/28079 ,  H01L21/28211 ,  H01L22/20 ,  H01L29/66568 ,  H01L2924/0002 ,  H01L2924/00

摘要： A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.

摘要翻译： 提供带电粒子束装置，其比使用氢化硅和卤化物作为源气体的常规沉积更快地实现半导体膜沉积。 带电粒子束装置包括带电粒子源1，聚光透镜电极2，消隐电极3，扫描电极4，其上安装有样品9的样品台10，二次带电粒子检测器8，其检测次级 响应于带电粒子束照射从样品9产生的带电粒子7，容纳环戊硅烷作为源气体的储存器14以及将源气体供应到样品9的气枪11。

公开(公告)号：US20150376791A1

公开(公告)日：2015-12-31

申请号：US14831900

申请日：2015-08-21

申请人： International Business Machines Corporation

发明人： Oleg Gluschenkov ,  Ahmet S. Ozcan

IPC分类号： C23C16/48 ,  C23C16/52 ,  C23C16/42 ,  H01J37/305 ,  H01J37/30 ,  H01L21/67 ,  C23C16/452 ,  C23C16/458

CPC分类号： H01L21/02057 ,  C23C14/02 ,  C23C16/0236 ,  C23C16/42 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/4582 ,  C23C16/486 ,  C23C16/52 ,  H01J37/30 ,  H01J37/3002 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/32449 ,  H01J2237/0812 ,  H01J2237/30472 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/334 ,  H01L21/02068 ,  H01L21/28506 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28575 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/67028

摘要： A method of forming a low temperature silicide film on a substrate includes supplying a source gas to a cluster formation chamber to form a gas cluster that is subsequently moved to an ionization-acceleration chamber to form a gas cluster ion beam (GCIB). The GCIB is injected into a processing chamber containing the substrate. A precursor gas is injected through an injection device located on a top portion of the processing chamber to form a silicide film on the substrate by bombarding the substrate with the GCIB in the presence of the precursor gas.

公开(公告)号：US20150369710A1

公开(公告)日：2015-12-24

申请号：US14524315

申请日：2014-10-27

申请人： FEI Company

发明人： Scott Edward Fuller ,  Oleg Sidorov

IPC分类号： G01N1/32 ,  H01J37/305 ,  G03F7/20 ,  C23C16/48 ,  C23C16/50 ,  C23C16/52 ,  H01J37/302 ,  H01J37/317

CPC分类号： G01N1/32 ,  C23C16/486 ,  C23C16/50 ,  C23C16/52 ,  G03F7/70616 ,  H01J37/3056 ,  H01J37/317 ,  H01J37/3178 ,  H01J2237/3109 ,  H01J2237/31732 ,  H01J2237/31749

摘要： A system is provided to produce symmetric depositions using a charged-particle beam deposition with an angled beam. In the past, the use of an FIB with non-orthogonal incidence angles produced depositions that grew toward the FIB beam path making it difficult to produce uniformity of the deposit. With the current invention, a symmetrical deposition is made even with the use of a non-orthogonal FIB.

摘要翻译： 提供了一种使用带有角度束的带电粒子束沉积来产生对称沉积的系统。 在过去，使用具有非正交入射角的FIB产生朝向FIB光束路径增长的沉积物，使得难以产生沉积物的均匀性。 利用本发明，即使使用非正交FIB也可进行对称沉积。