公开(公告)号：US09847228B2

公开(公告)日：2017-12-19

申请号：US15260442

申请日：2016-09-09

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Simon Ruffell ,  Thomas R. Omstead ,  Anthony Renau

IPC分类号： H01L21/22 ,  H01L21/225 ,  H01L21/02 ,  C23C16/455 ,  C23C16/48 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32 ,  H01L21/311 ,  H01L21/324 ,  H01L29/66

CPC分类号： H01L21/2253 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/486 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32357 ,  H01L21/02057 ,  H01L21/02112 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/0226 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02636 ,  H01L21/2225 ,  H01L21/225 ,  H01L21/2252 ,  H01L21/31116 ,  H01L21/324 ,  H01L29/66803

摘要： A method may include providing a substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane; directing an ion beam comprising angled ions to the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, wherein a first portion of the substrate feature is exposed to the ion beam and wherein a second portion of the substrate feature is not exposed to the ion beam; directing molecules of a molecular species to the substrate wherein the molecules of the molecular species cover the substrate feature; and providing a second species to react with the molecular species, wherein selective growth of a layer comprising the molecular species and the second species takes place such that a first thickness of the layer grown on the first portion is different from a second thickness grown on the second portion.

公开(公告)号：US09673114B1

公开(公告)日：2017-06-06

申请号：US14695767

申请日：2015-04-24

申请人： Multibeam Corporation

发明人： David K. Lam ,  Kevin M. Monahan ,  Michael C. Smayling ,  Theodore A. Prescop

IPC分类号： H01L21/66 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/26 ,  H01J37/305 ,  H01J37/30

CPC分类号： H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

摘要： Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be removed from a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beams. Reducing the number of process steps, and eliminating lithography steps, in localized material removal has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material removal allows for controlled variation of removal rate and enables creation of 3D structures or profiles. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted substrate processing.

公开(公告)号：US20160379827A1

公开(公告)日：2016-12-29

申请号：US15260442

申请日：2016-09-09

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Simon Ruffell ,  Thomas R. Omstead ,  Anthony Renau

IPC分类号： H01L21/225 ,  H01L29/66 ,  H01L21/324

CPC分类号： H01L21/2253 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/486 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32357 ,  H01L21/02057 ,  H01L21/02112 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/0226 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02636 ,  H01L21/2225 ,  H01L21/225 ,  H01L21/2252 ,  H01L21/31116 ,  H01L21/324 ,  H01L29/66803

摘要： A method may include providing a substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane; directing an ion beam comprising angled ions to the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, wherein a first portion of the substrate feature is exposed to the ion beam and wherein a second portion of the substrate feature is not exposed to the ion beam; directing molecules of a molecular species to the substrate wherein the molecules of the molecular species cover the substrate feature; and providing a second species to react with the molecular species, wherein selective growth of a layer comprising the molecular species and the second species takes place such that a first thickness of the layer grown on the first portion is different from a second thickness grown on the second portion.

摘要翻译： 方法可以包括提供具有限定衬底平面的表面和从衬底平面延伸的衬底特征的衬底; 将包括成角离子的离子束相对于垂直于衬底平面的非零角度引导到衬底，其中衬底特征的第一部分暴露于离子束，并且其中衬底特征的第二部分是 不暴露于离子束; 将分子物质的分子引导到基底，其中分子种类的分子覆盖基底特征; 以及提供与分子物质反应的第二物质，其中包含分子种类和第二物质的层的选择性生长发生，使得在第一部分上生长的层的第一厚度不同于在 第二部分。

公开(公告)号：US20160266280A1

公开(公告)日：2016-09-15

申请号：US15164032

申请日：2016-05-25

申请人： QSpex Technologies, Inc.

发明人： Kai C. Su ,  Leslie F. Stebbins ,  Bill Mantch ,  Eugene C. Letter

IPC分类号： G02B1/115 ,  G02B1/04

CPC分类号： G02B1/115 ,  B05D1/18 ,  B05D1/60 ,  B82Y30/00 ,  B82Y40/00 ,  C23C16/486 ,  G02B1/041 ,  G02B1/11 ,  G02B1/14

摘要： The invention relates to a method of applying an anti-reflective coating to an optical surface of a mold, including providing a lens mold having an optical surface, forming a deposition layer of a fluoride or oxide material to the optical surface of the lens mold, forming a layer of a hydrophobic material over the deposition layer, wherein the hydrophobic material contains an amount of dipodal silane that is a relative percentage of the hydrophobic material, forming a first layer of SiO2 with a thickness of 5-40 nm over the layer of the hydrophobic material, forming an anti-reflective coating layered structure over the first layer of SiO2, and forming a layer of a silane coupling agent that is deposited with a monolayer thickness to the anti-reflective coating layered structure using vapor deposition under aprotic conditions or by dip coating using a solution of silane coupling agent in an aprotic solvent.

摘要翻译： 本发明涉及一种将防反射涂层施加到模具的光学表面上的方法，包括提供具有光学表面的透镜模具，在透镜模具的光学表面上形成氟化物或氧化物材料的沉积层， 在所述沉积层上形成疏水材料层，其中所述疏水材料含有一定量的二嵌段硅烷，其是所述疏水材料的相对百分数，在所述疏水材料层上形成厚度为5-40nm的第一SiO 2层 所述疏水材料在所述第一SiO 2层上形成抗反射涂层层状结构，并且在非质子条件下使用气相沉积形成沉积有单层厚度的硅烷偶联剂层至所述抗反射涂层层状结构，或 通过使用硅烷偶联剂在非质子溶剂中的溶液进行浸涂。

公开(公告)号：US09334568B2

公开(公告)日：2016-05-10

申请号：US14799397

申请日：2015-07-14

申请人： FEI Company

发明人： Steven Randolph ,  Clive D. Chandler

IPC分类号： H05H1/24 ,  C23C16/48 ,  C23C16/18 ,  H01L21/285 ,  H01L21/768

CPC分类号： C23C16/486 ,  C23C16/047 ,  C23C16/18 ,  C23C16/34 ,  C23C16/407 ,  H01J2237/31732 ,  H01L21/28556 ,  H01L21/76877 ,  H01L21/76892

摘要： An improved method of beam deposition to deposit a low-resistivity metal. Preferred embodiments of the present invention use a novel focused ion beam induced deposition precursor to deposit low-resistivity metallic material such as tin. Applicants have discovered that by using a methylated or ethylated metal such as hexamethylditin as a precursor, material can be deposited having a resistivity as low as 40 μΩ·cm.

公开(公告)号：US09260782B2

公开(公告)日：2016-02-16

申请号：US13842184

申请日：2013-03-15

申请人： HITACHI HIGH-TECH SCIENCE CORPORATION

发明人： Xin Man ,  Ikuko Nakatani

IPC分类号： B05D3/00 ,  C08J7/18 ,  C23C16/48 ,  C23C16/04 ,  H01J37/305

CPC分类号： C23C16/486 ,  C23C16/047 ,  H01J37/3056 ,  H01J2237/31745

摘要： A sample preparation method includes processing a sample by an ion beam to form a thin film portion having a thickness that allows an electron beam to transmit therethrough; supplying deposition gas to the thin film portion; and irradiating the thin film portion with an electron beam to simultaneously form a deposition film on a front surface of the thin film portion and a deposition film on a rear surface of the thin film portion opposed to the front surface. The electron beam transmits through the thin film portion, generating secondary electrons from both the front and rear surfaces that decompose the deposition gas to form the deposition films.

摘要翻译： 样品制备方法包括通过离子束处理样品以形成具有允许电子束透射的厚度的薄膜部分; 向薄膜部分供应沉积气体; 并用电子束照射薄膜部分，同时在薄膜部分的前表面上形成沉积膜，并且在与前表面相对的薄膜部分的后表面上形成沉积膜。 电子束透过薄膜部分，从前表面和后表面产生分解沉积气体的二次电子以形成沉积膜。

公开(公告)号：US20150332927A1

公开(公告)日：2015-11-19

申请号：US14277857

申请日：2014-05-15

申请人： International Business Machines Corporation

发明人： Oleg Gluschenkov ,  Ahmet S. Ozcan

IPC分类号： H01L21/285 ,  H01J37/30 ,  H01L21/02 ,  H01J37/305

CPC分类号： H01L21/02057 ,  C23C14/02 ,  C23C16/0236 ,  C23C16/42 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/4582 ,  C23C16/486 ,  C23C16/52 ,  H01J37/30 ,  H01J37/3002 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/32449 ,  H01J2237/0812 ,  H01J2237/30472 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/334 ,  H01L21/02068 ,  H01L21/28506 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28575 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/67028

摘要： A method of forming a low temperature silicide film on a substrate includes supplying a source gas to a cluster formation chamber to form a gas cluster that is subsequently moved to an ionization-acceleration chamber to form a gas cluster ion beam (GCIB). The GCIB is injected into a processing chamber containing the substrate. A precursor gas is injected through an injection device located on a top portion of the processing chamber to form a silicide film on the substrate by bombarding the substrate with the GCIB in the presence of the precursor gas.

摘要翻译： 在衬底上形成低温硅化物膜的方法包括将源气体供应到簇形成室以形成随后移动到电离加速室以形成气体簇离子束（GCIB）的气体团。 将GCIB注入含有基材的处理室中。 通过位于处理室顶部的注入装置注入前体气体，以在前体气体的存在下用GCIB轰击衬底，从而在衬底上形成硅化物膜。

公开(公告)号：US20150299847A1

公开(公告)日：2015-10-22

申请号：US14651004

申请日：2014-01-09

申请人： KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)

发明人： Satoshi HIROTA ,  Homare NOMURA

IPC分类号： C23C16/02 ,  C23C16/44 ,  H01J37/32 ,  C23C16/48

CPC分类号： C23C16/0245 ,  C23C14/022 ,  C23C16/0227 ,  C23C16/44 ,  C23C16/4584 ,  C23C16/486 ,  H01J37/32568 ,  H01J37/3266 ,  H01J2237/3321 ,  H01J2237/335

摘要： An ion bombardment device for stabilizing and cleaning the surface of a substrate. The device includes: a vacuum chamber; at least one electrode that is disposed on the inner wall face of the vacuum chamber and emits electrons; a plurality of anodes that receive the electrons from the electrode and that are arranged so as to face the electrode with the substrate sandwiched therebetween; and a plurality of discharge power sources corresponding to the anodes respectively. Each of the discharge power sources is insulated from the vacuum chamber and provides to the anode corresponding to the relevant discharge power source currents and voltages that can be set independently of one another, thereby generating a glow discharge between such anode and the electrode.

摘要翻译： 一种用于稳定和清洁基底表面的离子轰击装置。 该装置包括：真空室; 至少一个电极，设置在真空室的内壁面上并发射电子; 多个阳极，其从所述电极接收电子，并且被布置为与所述电极对置，所述基板夹在其间; 以及分别对应于阳极的多个放电电源。 每个放电电源与真空室绝缘，并且提供给阳极，该阳极对应于可以彼此独立设置的相关放电电源电流和电压，从而在这种阳极和电极之间产生辉光放电。

公开(公告)号：US20150212237A1

公开(公告)日：2015-07-30

申请号：US14679398

申请日：2015-04-06

申请人： QSPEX TECHNOLOGIES, INC.

发明人： Kai C. Su ,  Leslie F. Stebbins ,  Bill Mantch ,  Eugene C. Letter

IPC分类号： G02B1/11 ,  C23C16/48 ,  B05D1/18 ,  B05D1/00

CPC分类号： G02B1/115 ,  B05D1/18 ,  B05D1/60 ,  B82Y30/00 ,  B82Y40/00 ,  C23C16/486 ,  G02B1/041 ,  G02B1/11 ,  G02B1/14

摘要： The present invention relates to a method of applying an anti-reflective coating to an optical surface of a mold. In one embodiment, the method includes the steps of providing a lens mold having an optical surface; forming a layer of a hydrophobic material over the optical surface, wherein the hydrophobic material contains an amount of dipodal silane that is a relative percentage of the hydrophobic material; forming an anti-reflective coating layered structure over the layer of the hydrophobic material; and forming a layer of a coupling agent deposited with a monolayer thickness to the anti-reflective coating layered structure using vapor deposition under aprotic conditions or by dip coating using a solution of a coupling agent in an aprotic solvent.

摘要翻译： 本发明涉及一种将抗反射涂层施加到模具的光学表面上的方法。 在一个实施例中，该方法包括提供具有光学表面的透镜模具的步骤; 在所述光学表面上形成疏水材料层，其中所述疏水材料含有一定量的作为所述疏水材料的相对百分比的二嵌段硅烷; 在疏水材料的层上形成抗反射涂层层状结构; 以及在非质子条件下使用气相沉积或通过使用偶联剂在非质子溶剂中的溶液进行浸涂，将形成单层厚度的偶联剂层形成至抗反射涂层层状结构。

公开(公告)号：US08828886B2

公开(公告)日：2014-09-09

申请号：US13440480

申请日：2012-04-05

申请人： Seiji Samukawa ,  Shigeo Yasuhara ,  Shingo Kadomura ,  Tsutomu Shimayama ,  Hisashi Yano ,  Kunitoshi Tajima ,  Noriaki Matsunaga ,  Masaki Yoshimaru

发明人： Seiji Samukawa ,  Shigeo Yasuhara ,  Shingo Kadomura ,  Tsutomu Shimayama ,  Hisashi Yano ,  Kunitoshi Tajima ,  Noriaki Matsunaga ,  Masaki Yoshimaru

IPC分类号： H01L21/312 ,  C09D183/04 ,  H01L21/02 ,  C23C16/48 ,  C23C16/40

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/486 ,  H01L21/02216 ,  H01L21/02277

摘要： Disclosed is a low dielectric constant insulating film formed of a polymer containing Si atoms, O atoms, C atoms, and H atoms, which includes straight chain molecules in which a plurality of basic molecules with an SiO structure are linked in a straight chain, binder molecules with an SiO structure linking a plurality of the straight chain molecules. The area ratio of a signal indicating a linear type SiO structure is 49% or more, and the signal amount of the signal indicating Si(CH3) is 66% or more.

摘要翻译： 公开了由包含Si原子，O原子，C原子和H原子的聚合物形成的低介电常数绝缘膜，其包括其中多个具有SiO结构的碱性分子在直链中键合的直链分子，粘合剂 具有连接多个直链分子的SiO结构的分子。 指示线性型SiO结构的信号的面积比为49％以上，表示Si（CH3）的信号的信号量为66％以上。